2SD1422 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1422
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 100 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 100 MHz
Ganancia de corriente contínua (hFE): 60
Encapsulados: SOT89
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2SD1422 datasheet
8.1. Size:49K toshiba
2sd1429.pdf 
This Material Copyrighted By Its Respective Manufacturer
8.2. Size:116K toshiba
2sd1428.pdf
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8.3. Size:37K panasonic
2sd1424.pdf
Transistor 2SD1424 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. High foward current transfer ratio hFE. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 50 V 1.27 1.27 Collector to emitter voltag
8.4. Size:41K panasonic
2sd1423 e.pdf
Transistor 2SD1423, 2SD1423A Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SB1030 and 2SB1030A 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit marking Collector to 2SD1423 30 VCBO V 1 2 3 base voltage 2SD1423A 60 Collector
8.5. Size:41K panasonic
2sd1424 e.pdf
Transistor 2SD1424 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. High foward current transfer ratio hFE. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 50 V 1.27 1.27 Collector to emitter voltag
8.6. Size:37K panasonic
2sd1423.pdf
Transistor 2SD1423, 2SD1423A Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SB1030 and 2SB1030A 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit marking Collector to 2SD1423 30 VCBO V 1 2 3 base voltage 2SD1423A 60 Collector
8.7. Size:30K hitachi
2sd1420.pdf
2SD1420 Silicon NPN Epitaxial Application Low frequency power amplifier Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1420 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 180 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 5V Collector current IC 1.5 A Collector peak curren
8.8. Size:30K hitachi
2sd1421.pdf
2SD1421 Silicon NPN Epitaxial Application Low frequency power amplifier Outline UPAK 1 2 3 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1421 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 180 V Collector to emitter voltage VCEO 160 V Emitter to base voltage VEBO 5V Collector current IC 1.5 A Collector peak curren
8.11. Size:881K kexin
2sd1420.pdf
SMD Type Transistors NPN Transistors 2SD1420 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=120V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage VCEO 120 V Emitter - Base Voltage
8.12. Size:897K kexin
2sd1421.pdf
SMD Type Transistors NPN Transistors 2SD1421 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=160V Low frequency power amplifier 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage
8.13. Size:191K inchange semiconductor
2sd1429.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1429 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a
8.14. Size:215K inchange semiconductor
2sd1427.pdf
isc Silicon NPN Power Transistor 2SD1427 DESCRIPTION High Breakdown Voltage High Switching Speed Built-in damper diode Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collec
8.15. Size:215K inchange semiconductor
2sd1426.pdf
isc Silicon NPN Power Transistor 2SD1426 DESCRIPTION High Breakdown Voltage High Switching Speed Built-in damper diode Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of colour TV receivers. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALU
8.16. Size:189K inchange semiconductor
2sd1428.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1428 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications ABSOLUTE MAX
8.17. Size:189K inchange semiconductor
2sd1425.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1425 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications ABSOLUTE MAX
Otros transistores... 2SD1415, 2SD1416, 2SD1417, 2SD1418, 2SD1419, 2SD142, 2SD1420, 2SD1421, BC337, 2SD1423, 2SD1423A, 2SD1424, 2SD1425, 2SD1426, 2SD1427, 2SD1428, 2SD1429
