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2SD1443A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1443A

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 60 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 60

Empaquetado / Estuche: TO220

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2SD1443A Datasheet (PDF)

4.1. 2sd1440.pdf Size:102K _panasonic

2SD1443A
2SD1443A

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

4.2. 2sd1446.pdf Size:63K _panasonic

2SD1443A
2SD1443A

Power Transistors 2SD1446 Silicon NPN triple diffusion planar type Darlington For power amplification Unit: mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features ? 3.1 0.1 High foward current transfer ratio hFE High collector to base voltage VCBO Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 +0.2 Absolute Maximum Ratings (TC=25?C) 0.5 0.1

 4.3. 2sd1441.pdf Size:102K _panasonic

2SD1443A
2SD1443A

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

4.4. 2sd1441.pdf Size:75K _jmnic

2SD1443A
2SD1443A

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1441 DESCRIPTION ·With TO-3PN package ·Built-in damper diode ·High voltage ,high reliability ·High speed switching ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 sim

 4.5. 2sd1440.pdf Size:215K _inchange_semiconductor

2SD1443A
2SD1443A

isc Silicon NPN Power Transistor 2SD1440 DESCRIPTION ·High Breakdown Voltage- : V = 1500V (Min) CBO ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Ba

4.6. 2sd1445 2sd1445a.pdf Size:167K _inchange_semiconductor

2SD1443A
2SD1443A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1445 2SD1445A DESCRIPTION Ў¤ With TO-220Fa package Ў¤ Complement to type 2SB948/948A Ў¤ High speed switching Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ For power amplification,power switching and low-voltage switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Ў

4.7. 2sd1446.pdf Size:202K _inchange_semiconductor

2SD1443A
2SD1443A

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1446 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V = 400V(Min) (BR)CEO · Low Collector-Emitter Saturation Voltage- : V = 1.5V(Max) @I = 3A CE(sat) C ·High DC Current Gain : h = 500(Min) @ I = 2A, V = 2V FE C CE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance

4.8. 2sd1444.pdf Size:216K _inchange_semiconductor

2SD1443A
2SD1443A

isc Silicon NPN Power Transistor 2SD1444 DESCRIPTION ·Low Collector Saturation Voltage : V = 0.6V(Max)@ I = 5A CE(sat) C ·Collector-Emitter Breakdown Voltage- : V = 20V (Min) (BR)CEO ·Complement to Type 2SB956 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =

4.9. 2sd1441.pdf Size:214K _inchange_semiconductor

2SD1443A
2SD1443A

isc Silicon NPN Power Transistor 2SD1441 DESCRIPTION ·High Breakdown Voltage- : V = 1500V (Min) CBO ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Ba

4.10. 2sd1444 2sd1444a.pdf Size:126K _inchange_semiconductor

2SD1443A
2SD1443A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220Fa package Ў¤ Low collector saturation voltage Ў¤ High speed switching Ў¤ High collector current Ў¤ Complement to type 2SB953/953A APPLICATIONS Ў¤ Power amplifiers Ў¤ Low voltage switching PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter 2SD1444 2SD1444A Fig.1 simpli

4.11. 2sd144.pdf Size:180K _inchange_semiconductor

2SD1443A
2SD1443A

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD144 DESCRIPTION ·DC Current Gain -h = 40(Min)@ I = 1A FE C ·Collector-Emitter Breakdown Voltage- : V = 50V(Min) (BR) CEO ·With TO-66 Package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25

4.12. 2sd1445.pdf Size:209K _inchange_semiconductor

2SD1443A
2SD1443A

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1445 DESCRIPTION ·Low Collector Saturation Voltage : V = 0.6V(Max)@ I = 10A CE(sat) C ·Collector-Emitter Breakdown Voltage- : V = 20V (Min) (BR)CEO ·Fast Switching Speed ·Complement to Type 2SB948 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power ampl

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 431 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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