Справочник транзисторов. 2SD1443A

 

Биполярный транзистор 2SD1443A - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SD1443A

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 40 W

Макcимально допустимое напряжение коллектор-база (Ucb): 60 V

Макcимальный постоянный ток коллектора (Ic): 10 A

Предельная температура PN-перехода (Tj): 150 °C

Статический коэффициент передачи тока (hfe): 60

Корпус транзистора: TO220

Аналоги (замена) для 2SD1443A

 

 

2SD1443A Datasheet (PDF)

4.1. 2sd1440.pdf Size:102K _panasonic

2SD1443A
2SD1443A

 This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

4.2. 2sd1446.pdf Size:63K _panasonic

2SD1443A
2SD1443A

Power Transistors 2SD1446 Silicon NPN triple diffusion planar type Darlington For power amplification Unit: mm 10.0± 0.2 4.2± 0.2 5.5± 0.2 2.7± 0.2 Features φ 3.1± 0.1 High foward current transfer ratio hFE High collector to base voltage VCBO Full-pack package which can be installed to the heat sink with one screw 1.3± 0.2 1.4± 0.1 +0.2 Absolute Maximum Ratings (TC=25˚C

 4.3. 2sd1441.pdf Size:102K _panasonic

2SD1443A
2SD1443A

 This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

4.4. 2sd1441.pdf Size:75K _jmnic

2SD1443A
2SD1443A

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1441 DESCRIPTION ·With TO-3PN package ·Built-in damper diode ·High voltage ,high reliability ·High speed switching ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1

 4.5. 2sd1440.pdf Size:215K _inchange_semiconductor

2SD1443A
2SD1443A

isc Silicon NPN Power Transistor 2SD1440 DESCRIPTION ·High Breakdown Voltage- : V = 1500V (Min) CBO ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Ba

4.6. 2sd1445 2sd1445a.pdf Size:167K _inchange_semiconductor

2SD1443A
2SD1443A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1445 2SD1445A DESCRIPTION · ·With TO-220Fa package ·Complement to type 2SB948/948A ·High speed switching ·Low collector saturation voltage APPLICATIONS ·For power amplification,power switching and low-voltage switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Ab

4.7. 2sd1446.pdf Size:202K _inchange_semiconductor

2SD1443A
2SD1443A

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1446 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V = 400V(Min) (BR)CEO · Low Collector-Emitter Saturation Voltage- : V = 1.5V(Max) @I = 3A CE(sat) C ·High DC Current Gain : h = 500(Min) @ I = 2A, V = 2V FE C CE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance

4.8. 2sd1444.pdf Size:216K _inchange_semiconductor

2SD1443A
2SD1443A

isc Silicon NPN Power Transistor 2SD1444 DESCRIPTION ·Low Collector Saturation Voltage : V = 0.6V(Max)@ I = 5A CE(sat) C ·Collector-Emitter Breakdown Voltage- : V = 20V (Min) (BR)CEO ·Complement to Type 2SB956 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =

4.9. 2sd1441.pdf Size:214K _inchange_semiconductor

2SD1443A
2SD1443A

isc Silicon NPN Power Transistor 2SD1441 DESCRIPTION ·High Breakdown Voltage- : V = 1500V (Min) CBO ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Collector-Ba

4.10. 2sd1444 2sd1444a.pdf Size:126K _inchange_semiconductor

2SD1443A
2SD1443A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1444 2SD1444A DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·High speed switching ·High collector current ·Complement to type 2SB953/953A APPLICATIONS ·Power amplifiers ·Low voltage switching PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (

4.11. 2sd144.pdf Size:180K _inchange_semiconductor

2SD1443A
2SD1443A

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD144 DESCRIPTION ·DC Current Gain -h = 40(Min)@ I = 1A FE C ·Collector-Emitter Breakdown Voltage- : V = 50V(Min) (BR) CEO ·With TO-66 Package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25

4.12. 2sd1445.pdf Size:209K _inchange_semiconductor

2SD1443A
2SD1443A

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1445 DESCRIPTION ·Low Collector Saturation Voltage : V = 0.6V(Max)@ I = 10A CE(sat) C ·Collector-Emitter Breakdown Voltage- : V = 20V (Min) (BR)CEO ·Fast Switching Speed ·Complement to Type 2SB948 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power ampl

Другие транзисторы... 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 , 2N3201 , 2N4401 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2N3208 , 2N3209 , 2N3209AQF .

 

 
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