2SD1471
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1471
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3
W
Tensión colector-base (Vcb): 40
V
Corriente del colector DC máxima (Ic): 0.3
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 25000
Paquete / Cubierta:
SOT89
Búsqueda de reemplazo de transistor bipolar 2SD1471
2SD1471
Datasheet (PDF)
..1. Size:32K hitachi
2sd1471.pdf 
2SD1471Silicon NPN Planar, DarlingtonApplicationHigh gain amplifierOutlineUPAK12 23141. Base2. Collector3. Emitter4. Collector (Flange)32SD1471Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 40 VCollector to emitter voltage VCEO 30 VEmitter to base voltage VEBO 10 VCollector current IC 300 mACollector pea
..2. Size:938K kexin
2sd1471.pdf
SMD Type TransistorsNPN Transistors2SD1471SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.3AC Collector Emitter Voltage VCEO=30VB0.42 0.10.46 0.11.BaseE2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 30 V Emitter - Base V
8.1. Size:57K panasonic
2sd1478 e.pdf
Transistor2SD1478, 2SD1478ASilicon NPN epitaxial planer type darlingtonUnit: mm+0.2For low-frequency amplification2.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15Features1Forward current transfer ratio hFE is designed high, which is ap-propriate to the driver circuit of motors and printer bammer: hFE3= 4000 to 20000. 2A shunt resistor is omitted from the driver
8.2. Size:54K panasonic
2sd1474.pdf
Power Transistors2SD1474Silicon NPN epitaxial planar typeFor power amplification with high forward current transfer ratioUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesHigh forward current transfer ratio hFE which has satisfactory 3.1 0.1linearityHigh emitter to base voltage VEBOFull-pack package which can be installed to the heat sink withone screw1.3
8.3. Size:53K panasonic
2sd1478.pdf
Transistor2SD1478, 2SD1478ASilicon NPN epitaxial planer type darlingtonUnit: mm+0.2For low-frequency amplification2.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15Features1Forward current transfer ratio hFE is designed high, which is ap-propriate to the driver circuit of motors and printer bammer: hFE3= 4000 to 20000. 2A shunt resistor is omitted from the driver
8.4. Size:33K hitachi
2sd1472.pdf
2SD1472Silicon NPN Epitaxial, DarlingtonApplicationLow frequency power amplifierOutlineUPAK21231ID41. Base2. Collector2 k 0.5 k3. Emitter(Typ) (Typ)4. Collector (Flange)32SD1472Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEB
8.5. Size:32K hitachi
2sd1470.pdf
2SD1470Silicon NPN Epitaxial, DarlingtonApplicationLow frequency power amplifierOutlineUPAK12 23141. Base2. Collector3. Emitter4. Collector (Flange)32SD1470Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7VCollector current IC 1AColle
8.6. Size:891K kexin
2sd1472.pdf
SMD Type TransistorsNPN Transistors2SD1472SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1.5AC Collector Emitter Voltage VCEO=120V0.42 0.10.46 0.1BID1.Base2 k 0.5 k2.Collector(Typ) (Typ)3.EmitterE Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter
8.7. Size:873K kexin
2sd1478a.pdf
SMD Type TransistorsNPN Transistors2SD1478ASOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=0.5A1 2 Collector Emitter Voltage VCEO=50V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1C1.BaseB2.Emitter3.collectorE Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO
8.8. Size:572K kexin
2sd1478.pdf
SMD Type TransistorsNPN Transistors2SD1478SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=0.5A1 2 Collector Emitter Voltage VCEO=25V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1C1.BaseB2.Emitter3.collectorE Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 3
8.9. Size:829K kexin
2sd1470.pdf
SMD Type TransistorsNPN Transistors2SD1470SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=60VC0.42 0.10.46 0.1B1.Base2.CollectorE3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 60 V Emitter - Base Vol
8.10. Size:212K inchange semiconductor
2sd1479.pdf
isc Silicon NPN Power Transistor 2SD1479DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBOV
8.11. Size:211K inchange semiconductor
2sd1475.pdf
isc Silicon NPN Power Transistor 2SD1475DESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max)@ I = 2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 60V (Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25
8.12. Size:209K inchange semiconductor
2sd1476.pdf
isc Silicon NPN Power Transistor 2SD1476DESCRIPTIONLow Collector Saturation Voltage: V = 1.0V(Max)@ I = 2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 60V (Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25
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