2SD1471 PDF and Equivalents Search

2SD1471 Silicon NPN Planar, Darlington Application High gain amplifier Outline UPAK 1 2 2 3 1 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 3 2SD1471 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 10 V Collector current IC 300 mA Collector pea... See More ⇒

SMD Type Transistors NPN Transistors 2SD1471 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=0.3A C Collector Emitter Voltage VCEO=30V B 0.42 0.1 0.46 0.1 1.Base E 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 30 V Emitter - Base V... See More ⇒

Transistor 2SD1478, 2SD1478A Silicon NPN epitaxial planer type darlington Unit mm +0.2 For low-frequency amplification 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features 1 Forward current transfer ratio hFE is designed high, which is ap- propriate to the driver circuit of motors and printer bammer hFE 3 = 4000 to 20000. 2 A shunt resistor is omitted from the driver... See More ⇒

Power Transistors 2SD1474 Silicon NPN epitaxial planar type For power amplification with high forward current transfer ratio Unit mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High forward current transfer ratio hFE which has satisfactory 3.1 0.1 linearity High emitter to base voltage VEBO Full-pack package which can be installed to the heat sink with one screw 1.3 ... See More ⇒

Transistor 2SD1478, 2SD1478A Silicon NPN epitaxial planer type darlington Unit mm +0.2 For low-frequency amplification 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features 1 Forward current transfer ratio hFE is designed high, which is ap- propriate to the driver circuit of motors and printer bammer hFE 3 = 4000 to 20000. 2 A shunt resistor is omitted from the driver... See More ⇒

2SD1472 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Outline UPAK 2 1 2 3 1 ID 4 1. Base 2. Collector 2 k 0.5 k 3. Emitter (Typ) (Typ) 4. Collector (Flange) 3 2SD1472 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEB... See More ⇒

2SD1470 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Outline UPAK 1 2 2 3 1 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 3 2SD1470 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7V Collector current IC 1A Colle... See More ⇒

SMD Type Transistors NPN Transistors 2SD1472 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=1.5A C Collector Emitter Voltage VCEO=120V 0.42 0.1 0.46 0.1 B ID 1.Base 2 k 0.5 k 2.Collector (Typ) (Typ) 3.Emitter E Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter ... See More ⇒

SMD Type Transistors NPN Transistors 2SD1478A SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=0.5A 1 2 Collector Emitter Voltage VCEO=50V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 C 1.Base B 2.Emitter 3.collector E Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO ... See More ⇒

SMD Type Transistors NPN Transistors 2SD1478 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=0.5A 1 2 Collector Emitter Voltage VCEO=25V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 C 1.Base B 2.Emitter 3.collector E Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 3... See More ⇒

SMD Type Transistors NPN Transistors 2SD1470 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=60V C 0.42 0.1 0.46 0.1 B 1.Base 2.Collector E 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 60 V Emitter - Base Vol... See More ⇒

isc Silicon NPN Power Transistor 2SD1479 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO V... See More ⇒

isc Silicon NPN Power Transistor 2SD1475 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max)@ I = 2A CE(sat) C Collector-Emitter Breakdown Voltage- V = 60V (Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25... See More ⇒

isc Silicon NPN Power Transistor 2SD1476 DESCRIPTION Low Collector Saturation Voltage V = 1.0V(Max)@ I = 2A CE(sat) C Collector-Emitter Breakdown Voltage- V = 60V (Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25... See More ⇒