2SD1485 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Power Transistors2SD1485Silicon NPN triple diffusion planar typeFor high power amplificationUnit: mmComplementary to 2SB105415.0 0.3 5.0 0.2Features11.0 0.2 3.2Extremely satisfactory linearity of the forward current transferratio hFE 3.2 0.1Wide area of safe operation (ASO)High transition frequency fTFull-pack package which can be installed to the heat sink

isc Silicon NPN Power Transistor 2SD1485DESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Max)@I = 3ACE(sat) CWide Area of Safe OperationComplement to Type 2SB1054Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V

DATA SHEETSILICON POWER TRANSISTOR2SD1481NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) On-chip C-to-B Zener diode for surge voltage absorption Low collector saturation voltage: VCE(SAT) = 1.5 V MAX. (at 1 A) Ideal for use in a direct drive from IC to the devices such

Data SheetAEC-Q101 QualifiedMedium Power Transistor (50V,0.5A)2SD1949FRA / 2SD1484KFRA2SD1949 / 2SD1484KFeatures Dimensions (Unit : mm)1) High current.(IC=0.5A)UMT32) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA.(SC-70)(1) Emitter(2) Bace(3) CollectorAbsolute maximum rationgs (Ta=25 C)SMT3(SC-59)Parameter Symbol Limits Unit

Data SheetMedium Power Transistor (50V,0.5A)MediumPowerTransistor(50V,0.5A)2SD1949 / 2SD1484K2SD19492SD1484KFeatures Dimensions (Unit : mm)1) High current.(IC=0.5A)UMT32) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA.(SC-70)(1) Emitter(2) Bace(3) C

2SD1949 / 2SD1484K / 2SC1741STransistorsTransistors2SC3359S(96-678-D15)(SPEC-D16)318

2SD1949 / 2SD1484KDatasheetMiddle Power Transistor (50V, 500mA)lOutlinelParameter Value SOT-323 SOT-346VCEO50VIC500mA 2SD1949 2SD1484K(UMT3) (SMT3) lFeatures lInner circuitl l1)High current. (IC=0.5A)2)Low VCE(sat) VCE(sat)400mV at IC=150mA/IB=15

Power Transistors2SD1480Silicon NPN triple diffusion planar typeFor power amplificationUnit: mmComplementary to 2SB105210.0 0.2 4.2 0.25.5 0.2 2.7 0.2Features High forward current transfer ratio hFE which has satisfactorylinearity 3.1 0.1 Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink withone

2SD1489Silicon NPN EpitaxialApplication Low frequency power amplifier Complementary pair with 2SB1058OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SD1489Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 20 VCollector to emitter voltage VCEO 16 VEmitter to base voltage VEBO 6VCollector current IC 2ACollec

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1481DESCRIPTIONOn-chip C-to-B Zener diode for surge voltage absorptionLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 1ACE(sat) CHigh DC Current Gain: h = 2000(Min) @I = 1AFE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation

isc Silicon NPN Power Transistor 2SD1488DESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Max)@I = 7ACE(sat) CWide Area of Safe OperationComplement to Type 2SB1057Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V

isc Silicon NPN Power Transistor 2SD1487DESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Max)@I = 5ACE(sat) CWide Area of Safe OperationComplement to Type 2SB1056Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V

isc Silicon NPN Power Transistor 2SD1480DESCRIPTIONLow Collector Saturation Voltage: V = 2.0V(Max)@ I = 2ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 60V (Min)(BR)CEOGood Linearity of hFEComplement to Type 2SB1052Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.

isc Silicon NPN Power Transistor 2SD1486DESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Max)@I = 4ACE(sat) CWide Area of Safe OperationComplement to Type 2SB1055Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER V