Справочник транзисторов. 2SD1485

 

Биполярный транзистор 2SD1485 - описание производителя. Основные параметры. Даташиты.

Наименование производителя: 2SD1485

Тип материала: Si

Полярность: NPN

Максимальная рассеиваемая мощность (Pc): 60 W

Макcимально допустимое напряжение коллектор-база (Ucb): 100 V

Макcимальный постоянный ток коллектора (Ic): 5 A

Предельная температура PN-перехода (Tj): 150 °C

Граничная частота коэффициента передачи тока (ft): 20 MHz

Статический коэффициент передачи тока (hfe): 80

Корпус транзистора: TO126

Аналоги (замена) для 2SD1485

 

 

2SD1485 Datasheet (PDF)

1.1. 2sd1485.pdf Size:44K _panasonic

2SD1485
2SD1485

Power Transistors 2SD1485 Silicon NPN triple diffusion planar type For high power amplification Unit: mm Complementary to 2SB1054 15.0 0.3 5.0 0.2 Features 11.0 0.2 3.2 Extremely satisfactory linearity of the forward current transfer ratio hFE ? 3.2 0.1 Wide area of safe operation (ASO) High transition frequency fT Full-pack package which can be installed to the heat sink with 2

1.2. 2sd1485.pdf Size:263K _inchange_semiconductor

2SD1485
2SD1485

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1485 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@IC= 3A ·Wide Area of Safe Operation ·Complement to Type 2SB1054 APPLICATIONS ·Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage

 4.1. 2sd1949fra 2sd1484kfra.pdf Size:977K _update

2SD1485
2SD1485

Data Sheet AEC-Q101 Qualified Medium Power Transistor (50V,0.5A) 2SD1949FRA / 2SD1484KFRA 2SD1949 / 2SD1484K Features Dimensions (Unit : mm) 1) High current.(IC=0.5A) UMT3 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. (SC-70) (1) Emitter (2) Bace (3) Collector Absolute maximum rationgs (Ta=25 C) SMT3 (SC-59) Parameter Symbol Limits Unit

4.2. 2sd1481.pdf Size:107K _nec

2SD1485
2SD1485

DATA SHEET SILICON POWER TRANSISTOR 2SD1481 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm) On-chip C-to-B Zener diode for surge voltage absorption Low collector saturation voltage: VCE(SAT) = 1.5 V MAX. (at 1 A) Ideal for use in a direct drive from IC to the devices such as OA an

 4.3. 2sd1949 2sd1484k.pdf Size:106K _rohm

2SD1485
2SD1485

Data Sheet Medium Power Transistor (50V,0.5A) M e d i u m P o w e r T r a n s i s t o r ( 5 0 V , 0 . 5 A ) 2SD1949 / 2SD1484K 2 S D 1 9 4 9 2 S D 1 4 8 4 K Features Dimensions (Unit : mm) 1) High current.(IC=0.5A) UMT3 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. (SC-70) (1) Emitter (2) Bace (3) Coll

4.4. 2sd1484.pdf Size:35K _rohm

2SD1485

2SD1949 / 2SD1484K / 2SC1741S Transistors Transistors 2SC3359S (96-678-D15) (SPEC-D16) 318

 4.5. 2sd1480.pdf Size:46K _panasonic

2SD1485
2SD1485

Power Transistors 2SD1480 Silicon NPN triple diffusion planar type For power amplification Unit: mm Complementary to 2SB1052 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High forward current transfer ratio hFE which has satisfactory linearity ? 3.1 0.1 Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw 1

4.6. 2sd1487.pdf Size:39K _panasonic

2SD1485

4.7. 2sd1486.pdf Size:39K _panasonic

2SD1485

4.8. 2sd1488.pdf Size:45K _panasonic

2SD1485

4.9. 2sd1489.pdf Size:23K _hitachi

2SD1485
2SD1485

2SD1489 Silicon NPN Epitaxial Application Low frequency power amplifier Complementary pair with 2SB1058 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SD1489 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 20 V Collector to emitter voltage VCEO 16 V Emitter to base voltage VEBO 6V Collector current IC 2A Collector powe

4.10. 2sd1480.pdf Size:269K _inchange_semiconductor

2SD1485
2SD1485

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1480 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) ·Good Linearity of hFE ·Complement to Type 2SB1052 APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMB

4.11. 2sd1487.pdf Size:263K _inchange_semiconductor

2SD1485
2SD1485

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1487 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@IC= 5A ·Wide Area of Safe Operation ·Complement to Type 2SB1056 APPLICATIONS ·Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage

4.12. 2sd1486.pdf Size:139K _inchange_semiconductor

2SD1485
2SD1485

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1486 DESCRIPTION · ·With TO-3PFa package ·Complement to type 2SB1055 ·High transition frequency fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(

4.13. 2sd1488.pdf Size:263K _inchange_semiconductor

2SD1485
2SD1485

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1488 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@IC= 7A ·Wide Area of Safe Operation ·Complement to Type 2SB1057 APPLICATIONS ·Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage

Другие транзисторы... 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2N2219 , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 , 2SA1815-5 , 2SA182 , 2SA1822 , 2SA183 .

 

 
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