2SD1522 Todos los transistores

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1522 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 450V(Min) (BR)CEO High DC Current Gain h = 500(Min) @ I = 5A, V = 3V FE C CE Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and

Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Request

2SD1525 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington Power Transistor) 2SD1525 High Current Switching Applications Unit mm High collector current IC = 30 A High DC current gain hFE = 1000 (min) (VCE = 5 V, IC = 20 A) Monolithic construction with built-in base-emitter shunt resistor. Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol

2SD1527 Silicon NPN Triple Diffused Application High voltage power amplifier Outline TO-220AB 1. Base 2. Collector (Flange) 1 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 1000 V Collector to emitter voltage VCEO 1000 V Emitter to base voltage VEBO 5V Collector current IC 0.5 A Collector power dissipation PC 1.8 W

2SD1521 Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 2 3 1. Emitter ID 2. Collector 3. Base 1 2 k 0.5 k 2 3 (Typ) (Typ) 1 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 7V Collector current IC 1.5 A Collector peak current IC (peak) 3.0 A Collector

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1523 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 450V(Min) (BR)CEO High DC Current Gain h = 500(Min) @ I = 8A, V = 3V FE C CE Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and

isc Silicon NPN Power Transistor 2SD1528 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 2A CE(sat) C Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Good Linearity of h FE High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier,power switching appli

isc Silicon NPN Darlington Power Transistor 2SD1525 DESCRIPTION High DC Current Gain h = 1000(Min.)@ I = 20A FE C Collector-Emitter Breakdown Voltage- V = 100V(Min.) (BR)CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1524 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 450V(Min) (BR)CEO High DC Current Gain h = 300(Min) @ I = 5A, V = 3V FE C CE Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and