2SD156 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD156
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 4 W
Tensión colector-base (Vcb): 200 V
Tensión colector-emisor (Vce): 200 V
Tensión emisor-base (Veb): 3 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 10 MHz
Ganancia de corriente contínua (hFE): 20
Encapsulados: TO66
Búsqueda de reemplazo de 2SD156
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2SD156 datasheet
0.4. Size:212K inchange semiconductor
2sd1563a.pdf 
isc Silicon NPN Power Transistor 2SD1563A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 160V (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SB1086A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM
0.5. Size:210K inchange semiconductor
2sd1564.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1564 DESCRIPTION Low Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 2A CE(sat) C High DC Current Gain h = 2000(Min) @I = 2A FE C Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audi
0.6. Size:210K inchange semiconductor
2sd1565.pdf
isc Silicon NPN Darlington Power Transistor 2SD1565 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain- h = 2000(Min)@ (V = 2V, I = 2A) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers and low speed switching applications. ABSOLUTE
0.7. Size:213K inchange semiconductor
2sd1562.pdf
isc Silicon NPN Power Transistor 2SD1562 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SB1085 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET
0.8. Size:199K inchange semiconductor
2sd1566.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1566 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 10A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching
0.9. Size:212K inchange semiconductor
2sd1563.pdf
isc Silicon NPN Power Transistor 2SD1563 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SB1086 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET
0.10. Size:126K inchange semiconductor
2sd1562 2sd1562a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1562 2SD1562A DESCRIPTION With TO-220C package Complement to type 2SB1085/1085A High transition frequency APPLICATIONS For low freuqency power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Tc=25
Otros transistores... 2SD1553, 2SD1554, 2SD1555, 2SD1556, 2SD1557, 2SD1558, 2SD1559, 2SD1559A, 2SC2383, 2SD1562, 2SD1562A, 2SD1563, 2SD1564, 2SD1565, 2SD1566, 2SD1567, 2SD1568
