2SD156. Аналоги и основные параметры
Наименование производителя: 2SD156
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 4 W
Макcимально допустимое напряжение коллектор-база (Ucb): 200 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 200 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 200 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 10 MHz
Статический коэффициент передачи тока (hFE): 20
Корпус транзистора: TO66
Аналоги (замена) для 2SD156
- подборⓘ биполярного транзистора по параметрам
2SD156 даташит
0.4. Size:212K inchange semiconductor
2sd1563a.pdf 
isc Silicon NPN Power Transistor 2SD1563A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 160V (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SB1086A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM
0.5. Size:210K inchange semiconductor
2sd1564.pdf 
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1564 DESCRIPTION Low Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 2A CE(sat) C High DC Current Gain h = 2000(Min) @I = 2A FE C Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audi
0.6. Size:210K inchange semiconductor
2sd1565.pdf 
isc Silicon NPN Darlington Power Transistor 2SD1565 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain- h = 2000(Min)@ (V = 2V, I = 2A) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers and low speed switching applications. ABSOLUTE
0.7. Size:213K inchange semiconductor
2sd1562.pdf 
isc Silicon NPN Power Transistor 2SD1562 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SB1085 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET
0.8. Size:199K inchange semiconductor
2sd1566.pdf 
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1566 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 10A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching
0.9. Size:212K inchange semiconductor
2sd1563.pdf 
isc Silicon NPN Power Transistor 2SD1563 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V (Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SB1086 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET
0.10. Size:126K inchange semiconductor
2sd1562 2sd1562a.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1562 2SD1562A DESCRIPTION With TO-220C package Complement to type 2SB1085/1085A High transition frequency APPLICATIONS For low freuqency power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Tc=25
Другие транзисторы: 2SD1553, 2SD1554, 2SD1555, 2SD1556, 2SD1557, 2SD1558, 2SD1559, 2SD1559A, 2SC2383, 2SD1562, 2SD1562A, 2SD1563, 2SD1564, 2SD1565, 2SD1566, 2SD1567, 2SD1568
