2SD1568 Todos los transistores

 

2SD1568 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1568

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 100 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 40

Empaquetado / Estuche: TO220

Búsqueda de reemplazo de transistor bipolar 2SD1568

 

2SD1568 Datasheet (PDF)

4.1. 2sd1565.pdf Size:106K _st

2SD1568
2SD1568

SD1565 RF & MICROWAVE TRANSISTORS UHF PULSED APPLICATIONS .500 WATTS @ 250Sec PULSE WIDTH, 10% DUTY CYCLE .REFRACTORY GOLD METALLIZATION .EMITTER BALLASTING AND LOW RESISTANCE FOR RELIABILITY AND RUGGEDNESS .INFINITE VSWR CAPABILITY AT .400 x .500 4LFL (M102) SPECIFIED OPERATING CONDITIONS hermetically sealed .INPUT MATCHED, COMMON BASE ORDER CODE BRANDING CONFIGURATION SD1565 SD1

4.2. 2sd1563a.pdf Size:47K _rohm

2SD1568

 4.3. 2sd1562a.pdf Size:48K _rohm

2SD1568

4.4. 2sd1564.pdf Size:57K _no

2SD1568
2SD1568

 4.5. 2sd1565.pdf Size:125K _inchange_semiconductor

2SD1568
2SD1568

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1565 DESCRIPTION Ў¤ With TO-220 package Ў¤ High DC current gain Ў¤ DARLINGTON Ў¤ Complement type 2SB1087 APPLICATIONS Ў¤ For low frequency power amplifier and power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220) and symbo

4.6. 2sd1563a.pdf Size:125K _inchange_semiconductor

2SD1568
2SD1568

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2SB1086A Ў¤ Wide area of safe operation Ў¤ High breakdown voltage :BVCEO=160V(min) APPLICATIONS Ў¤ For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2SD1563A Ў¤ Abs

4.7. 2sd1563.pdf Size:235K _inchange_semiconductor

2SD1568
2SD1568

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1563 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SB1086 APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Vo

4.8. 2sd1562 2sd1562a.pdf Size:126K _inchange_semiconductor

2SD1568
2SD1568

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1562 2SD1562A DESCRIPTION Ў¤ With TO-220C package Ў¤ Complement to type 2SB1085/1085A Ў¤ High transition frequency APPLICATIONS Ў¤ For low freuqency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Ў¤ Absolute maximum ratings(Tc=25Ў

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 431 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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