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2SD1588O Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1588O

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 80

Encapsulados: TO220

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2SD1588O datasheet

 7.1. Size:102K  nec
2sd1588.pdf pdf_icon

2SD1588O

DATA SHEET SILICON POWER TRANSISTOR 2SD1588 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT mm) Mold package that does not require an insulating board or insulation bushing Large current capacity in small dimension IC(DC) = 7 A Low collector saturation voltage VCE(sat) = 0.5 V MAX. (@5 A) Id

 7.2. Size:113K  jmnic
2sd1588.pdf pdf_icon

2SD1588O

Product Specification www.jmnic.com Silicon Power Transistors 2SD1588 DESCRIPTION With TO-220Fa package Complement to type 2SB1097 Low speed switching APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 emitter Fig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL PARA

 7.3. Size:215K  inchange semiconductor
2sd1588.pdf pdf_icon

2SD1588O

isc Silicon NPN Power Transistor 2SD1588 DESCRIPTION Large Current Capacity- I = 7A C Low Collector Saturation Voltage V = 0.5V(Max)@ I = 5A CE(sat) C Collector-Emitter Sustaining Voltage- V = 60V (Min) CEO(SUS) Complement to Type 2SB1097 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power

Otros transistores... 2SD1581, 2SD1582, 2SD1583, 2SD1584, 2SD1585, 2SD1586, 2SD1587, 2SD1588, TIP41, 2SD1588R, 2SD1588Y, 2SD1589, 2SD1589O, 2SD1589R, 2SD1589Y, 2SD158F, 2SD159

 

 

 


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