2SD16 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SD1658 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD1658 Micro Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications High DC current gain: hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C B Zener diode included between c

2SD1631 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1631 Micro Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications High DC current gain: hFE = 4000 (min) (V = 2 V, I = 150 mA) CE C Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C BMaximum Ratings (

2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD1662 High Current Switching Applications Unit: mm High DC current gain: hFE = 1000 (min) (V = 3 V, I = 15 A) CE C Low collector saturation voltage: V = 1.5 V (max) (I = 15 A) CE (sat) C Monolithic construction with built-in base-emitter shunt resistor. Maximum Ratings (Ta

Ordering number:2019APNP/NPN Epitaxial Planar Silicon Transistors2SB1124/2SD1624High Current Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2038[2SB1124/2SD1624]Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed.

Ordering number:ENN2019APNP/NPN Epitaxial Planar Silicon Transistors2SB1124/2SD1624High Current Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2038A[2SB1124/2SD1624]Features4.51.51.6 Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Fast swi

Ordering number : ENN1727D2SB1123 / 2SD1623PNP / NPN Epitaxial Planar Silicon Transistors2SB1123 / 2SD1623High-Current Switching ApplicationsApplicationsPackage Dimensions Voltage regulators, relay drivers, lamp drivers,unit : mmelectrical equipment.2038A[2SB1123 / 2SD1623]Features4.51.5 Adoption of FBET, MBIT processes.1.6 Low collector-to-emitter sat

Ordering number:2063APNP/NPN Epitaxial Planar Silicon Transistors2SB1143/2SD168350V/4A Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2042A[2SB1143/2SD1683]Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO.B : BaseC : C

Ordering number:ENN2063APNP/NPN Epitaxial Planar Silicon Transistors2SB1143/2SD168350V/4A Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2042B[2SB1143/2SD1683]Features8.04.03.3 Adoption of FBET, MBIT processes. 1.0 1.0 Low saturation voltage. Large current capacity and

Ordering number:1784BPNP/NPN Epitaxial Planar Silicon Transistors2SB1118/2SD1618Low-Voltage High-Current Amplifier,Muting ApplicationsFeatures Package Dimensions Low collector-to-emitter saturation voltage.unit:mm Very small size making it easy to provide high-2038density, small-sized hybrid ICs.[2SB1118/2SD1618]E : EmitterC : CollectorB : Base( ) : 2SB111

Ordering number:2041APNP/NPN Epitaxial Planar Silicon Transistors2SB1144/2SD1684100V/1.5A Switching ApplicationsFeatures Package Dimensions Adoption of FBET and MBIT processes.unit:mm High breakdown voltage.2042B Low saturation voltage.[2SB1144/2SD1684] Plastic-covered heat sink facilitating high-densitymounting.1 : Emitter2 : Collector3 : Base( ) : 2

Ordering number:2020APNP/NPN Epitaxial Planar Silicon Transistors2SB1141/2SD168118V/1.2A Switching ApplicationsApplications Package Dimensions Converters, relay drivers, low-voltage and highunit:mmpower AF Amplifier.2042A[2SB1141/2SD1681]Features Low saturation voltage and excellent linearity of hFE. Wide ASO.B : BaseC : CollectorE : Emitter( ) : 2SB1141

Ordering number:1785APNP/NPN Epitaxial Planar Silicon Transistors2SB1119/2SD1619LF Amplifier, Electronic Governor ApplicationsFeatures Package Dimensions Very small size making it easy to provide high-unit:mmdensity, small-sized hybrid ICs.2038[2SB1119/2SD1619]E : EmitterC : CollectorB : Base( ) : 2SB1119SANYO : PCP(Bottom view)SpecificationsAbsolute Maxi

Ordering number:1787APNP/NPN Epitaxial Planar Silicon Transistors2SB1121/2SD1621High-Current Driver ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2038[2SB1121/2SD1621]Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wid

Ordering number:EN2042ANPN Epitaxial Planar Silicon Transistor2SD168520V/5A Switching ApplicationsApplications Package Dimensions Strobe, voltage regulators, relay drivers, lampunit:mmdrivers.2042B[2SD1685]8.0Features4.03.31.0 1.0 Low saturation voltage. Large current capacity.3.0 Fast switching time. No insulator required when mounting becau

Ordering number : ENN70862SD1651Cwww.DataSheet4U.comNPN Triple Diffused Planar Silicon Transistor2SD1651CColor TV Horizontal DeflectionOutput ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1500V).2174A High reliability(Adoption of HVP process).[2SD1651C]5.6 Adoption of MBIT process. 3.416.03.1 On-chip

Ordering number:EN1781ANPN Epitaxial Planar Silicon Transistor2SD1628High-Current Switching ApplicationsApplications Package Dimensions Strobe DC-DC converters, relay drivers, hammerunit:mmdrivers, lamp drivers, motor drovers.2038A[2SD1628]4.5Features1.51.6 Low saturation voltage. High hFE. Large current capacity. Very small size making it easy t

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Ordering number : EN1719C2SD1620SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon Transistor2SD16201.5V, 3V Strobe ApplicationsFeatures Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted. Large current capacity and highly resistant to breakdown. Excellent linearity of hFE in the region from low current to high cur

Ordering number:2091BPNP/NPN Epitaxial Planar Silicon Transistors2SB1134/2SD166750V/5A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, and other generalunit:mmhigh-current switching applications.2041A[2SB1134/2SD1667]Features Low-saturation collector-to-emitter voltage : VCE(sat)=0.4V max/IC=()3A, IB=()0.3A.

Ordering number : ENN3031A2SB1133 / 2SD1666PNP / NPN Triple Diffused Planar Silicon Transistors2SB1133 / 2SD1666Low-FrequencyGeneral-Purpose Amplifier ApplicationsFeaturesPackage Dimensions Wide ASO(Adoption of MBIT process).unit : mm Micaless package facilitating easy mounting.2041A High reliability.[2SB1133 / 2SD1666]4.510.02.83.22.41.61.20.7

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Ordering number:1721APNP/NPN Epitaxial Planar Silicon Transistors2SB1126/2SD1626For Various DriversApplications Package Dimensions Relay drivers, hammer drivers, lamp drivers, motorunit:mmdrivers,2038[2SB1126/2SD1626]Features High DC current gain (4000 or greater). Large current capacity. Very small size making it easy to provide high-density, small-sized

Ordering number:2092BPNP/NPN Epitaxial Planar Silicon Transistors2SB1136/2SD166950V/12A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother genral high-current switching applications.2041A[2SB1136/2SD1669]Features Low-saturation collector-to-emitter voltage : VCE(sat)=0.5V (PNP), 0.4V (NPN) max.

Ordering number:2094BPNP/NPN Epitaxial Planar Silicon Transistors2SB1135/2SD166850V/7A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2041A[2SB1135/2SD1668]Features Low-saturation collector-to-emitter voltage : VCE(sat)=0.4V max. Wide ASO lead

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Ordering number:2060APNP/NPN Epitaxial Planar Silicon Transistors2SB1142/2SD168250V/2.5A High-Speed Switching ApplicationsApplications Package Dimensions Power supplies, relay drivers, lamp drivers. unit:mm2042AFeatures [2SB1142/2SD1682] Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO.B : BaseC : Collector( ) :

Ordering number : EN1727E2SB1123 / 2SD1623SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SB1123 / 2SD1623High-Current Switching ApplicationsApplications Voltage regulators, relay drivers, lamp drivers, electrical equipment.Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capaci

Ordering number:2017APNP/NPN Epitaxial Planar Silicon Transistors2SB1125/2SD1625Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2038[2SB1125/2SD1625]Features High DC current gain. Large current capacity and wide ASO. Very small size making it easy to provide high-dens

Ordering number:2040APNP/NPN Epitaxial Planar Silicon Transistors2SB1122/2SD1622Low-Frequency Power Amplifier ApplicationsApplications Package Dimensions Voltage regulators relay drivers, lamp drivers,unit:mmelectrical equipment.2038[2SB1122/2SD1622]Features Adoption of FBET process.. Very small size making it easy to provide high-density hybrid ICs.E : E

Ordering number:EN2016ANPN Epitaxial Planar Silicon Transistor2SD1627Driver ApplicationsApplications Package Dimensions Motor drivers, hammer drivers, relay drivers, voltageunit:mmregulator control.2038A[2SD1627]4.5Features1.51.6 High DC current gain (hFE 4000). Wide ASO. Very small size making it easy to provide high-density, small-sized hybrid

DATA SHEETSILICON TRANSISTORS2SD1616, 2SD1616ANPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) Low VCE(sat):VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA) Large PT in small dimension with versatilityPT = 0.75 W, VCEO = 50/60 V, IC(DC) = 1.0 A Complementary transistor with the 2SB1116 and 1

DATA SHEETSILICON TRANSISTORS2SD1615, 2SD1615ANPN SILICON EPITAXIAL TRANSISTORSPOWER MINI MOLDDESCRIPTION2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especiallyin Hybrid Integrated Circuits.FEATURESPACKAGE DIMENSIONS World Standard Miniature Packagein millimeters Low VCE (sat) VCE(sat) = 0.15 V Complement to 2SB111

DATA SHEETSILICON POWER TRANSISTOR2SD1691NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCEY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm) Large current capacity and low VCE(sat): IC(DC) = 5.0 A, IC(pulse) = 8.0 A VCE(sat) = 0.1 V TYP. (@IC = 2.0 A, IB = 0.2 A) Large power dissipation TO-126 type power transistor PT = 1.3 W (@Ta = 25

DATA SHEETSILICON TRANSISTORS2SD1615, 2SD1615ANPN SILICON EPITAXIAL TRANSISTORSPOWER MINI MOLDDESCRIPTION2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in HybridIntegrated Circuits.FEATURESPACKAGE DIMENSIONS World Standard Miniature Packagein millimeters Low VCE (sat) VCE(sat) = 0.15 V Complement to 2SB111

DATA SHEETSILICON POWER TRANSISTOR2SD1695NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHINGThe 2SD1695 is a Darlington connection transistor and PACKAGE DRAWING (UNIT: mm)incorporates a dumper diode between the collector and emitter anda constant voltage diode and protection elements between thecollector and base. T

DATA SHEETSILICON POWER TRANSISTOR2SD1692NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FEATURES PACKAGE DRAWING (UNIT: mm) High DC current gain due to Darlington connection Large current capacity and low VCE(sat) Large power dissipation TO-126 type power transistor Complementary transistor: 2SB1149 ABSOLUTE MAXIMUM RATINGS (Ta = 25C) Parameter

TransistorsMedium Power Transistor (32V, 1A)2SD1664 / 2SD1858FFeatures FExternal dimensions (Units: mm)1) Low VCE(sat), VCE(sat) = 0.15V (typical).(IC/IB = 500mA/50mA)2) Complements the2SB1132 / 2SB1237.FStructureEpitaxial planar typeNPN silicon transistorFAbsolute maximum ratings (Ta = 25_C)(96-207-D12)249Transistors 2SD1664 / 2SD1858FElectrical characteristics (

Ordering number : EN2019B2SB1124/2SD1624Bipolar Transistorhttp://onsemi.com() () ( ) ( )50V, 3A, Low VCE sat , PNP NPN Single PCPApplications Voltage regulators, relay drivers, lamp drivers, electrical equipmentFeatures Adoption of FBET, MBIT processes Low collector-to-emitter saturation voltage Fast switching speed Large current capacity and wide

Ordering number : EN1784C2SD1618Bipolar Transistorhttp://onsemi.com( )15V, 0.7A, Low VCE sat , NPN Single PCPFeatures Low collector-to-emitter saturation voltage Very small size making it easy to provide highdensity, small-sized hybrid ICsSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 20 V

Ordering number : EN1781B2SD1628Bipolar Transistorhttp://onsemi.com( )20V, 5A, Low VCE sat , NPN Single PCPApplications Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor droversFeatures Low saturation voltage High hFE Large current capacity Very small size making it easy to provide highdensity, small-sized hybrid ICs Halo

Ordering number : EN1719D2SD1620Bipolar Transistorhttp://onsemi.com( )10V, 3A, Low VCE sat , NPN Single PCPFeatures Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted Large current capacity and highly resistant to breakdown Excellent linearity of hFE in the region from low current to high current Ultrasmall size support

Ordering number : EN1727F2SB1123/2SD1623Bipolar Transistorhttp://onsemi.com() () ( ) ( )50V, 2A, Low VCE sat , PNP NPN Single PCPApplicaitons Voltage regulators, relay drivers, lamp drivers, electrical equipmentFeatures Adoption of FBET, MBIT processes Low collector-to-emitter saturation voltage Large current capacity and wide ASO Fast switching sp

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Transistor2SD1679Silicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mm+0.22.8 0.3+0.25Features 0.65 0.15 1.5 0.05 0.65 0.1518V zener diode is built in between collector and base.Low collector to emitter saturation voltage VCE(sat).1High foward current transfer ratio hFE.Mini type package, allowing downsizing of the equipment and3

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Power Transistors2SD1633Silicon NPN triple diffusion planar type darlingtonUnit: mmFor voltage switching10.00.2 4.20.25.50.2 2.70.2 Features 3.10.1 High-speed switching Satisfactory linearity of forward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw1.30.21.40.1 Absolute Maximum Rating

Power Transistors2SD1611Silicon NPN triple diffusion planar type DarlingtonUnit: mm8.5 0.2 3.4 0.3For power amplification6.0 0.5 1.0 0.1Features1.5max. 1.1max.High foward current transfer ratio hFEHigh collector to base voltage VCBO0.8 0.1 0.5max.N type package enabling direct soldering of the radiating fin to2.54 0.3the printed circuit board, etc. of sma

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UNISONIC TECHNOLOGIES CO., LTD 2SD1624 NPN SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION DESCRIPTION The UTC 2SD1624 applies to voltage regulators, relay drivers, lamp drivers, and electrical equipment. FEATURES * Adoption of FBET, MBIT processes * Low collector-to-emitter saturation voltage * Fast switching speed. * Large current capacity and wide ASO

UNISONIC TECHNOLOGIES CO., LTD 2SD1664 NPN SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicontransistor. FEATURES *Low VCE(SAT): VCE (SAT)= 0.15V(Typ.) (IC/IB= 500mA/50mA) * Complement the 2SB1132. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2

UNISONIC TECHNOLOGIES CO., LTD 2SD1691 NPN SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE 11LARGE CURRENT TO-220F1TO-220 FEATURES *High Power Dissipation 11*Complementary to 2SB1151 TO-251 TO-25211TO-126CTO-126 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2SD1691L-x-TA3-T 2SD1691

UNISONIC TECHNOLOGIES CO., LTD 2SD1616/A NPN SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR 11SOT-223SOT-89 DESCRIPTION * Audio frequency power amplifier * Medium speed switching 1SIP-311TO-92 TO-92SP ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen-Free 1 2 3 2SD1616L-x-AA3-B 2SD1616G-x-AA3-B SOT-22

UTC 2SD1609 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR FEATURES * Low frequency high voltage amplifier 1TO-1261:EMITTER 2:COLLECTOR 3:BASEABSOLUTE MAXIMUM RATINGS (Ta=25C, unless otherwise specified) PARAMETER SYMBOL MIN MAX UNITCollector-Base Voltage BVCBO 160 VCollector-Emitter Voltage BVCEO 160 VEmitter-Base Voltage BVEBO 5 VCollector Curre

2SD1606Silicon NPN Triple DiffusedApplicationLow frequency power amplifierOutlineTO-220AB211. BaseID2. Collector(Flange)13. Emitter 2.6 k 160 23(Typ) (Typ)32SD1606Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO 7VCollector cu

2SD1609, 2SD1610Silicon NPN EpitaxialApplicationLow frequency high voltage amplifier complementary pair with 2SB1109 and 2SB1110OutlineTO-126 MOD1. Emitter2. Collector3. Base123Absolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SD1609 2SD1610 UnitCollector to base voltage VCBO 160 200 VCollector to emitter voltage VCEO 160 200 VEmitter to base voltage VEB

2SD1616A 1A , 120V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Power dissipation ADMillimeter REF.Min. Max.BA 4.40 4.70CLASSIFICATION OF hFE (1) B 4.30 4.70C 12.70 -D 3.30 3.81Product-Rank 2SD1616A-L 2SD1616A-K 2SD1616A-UE 0.36 0.56F 0.36 0.51

2SD1664NPN Silicon Elektronische BauelementeGeneral Purpose TransistorR o H S C o m p lia n t P ro d u ctDD1AFeaturesSOT-89b112bPower dissipationCe3e1PCM : 0.5 W (Tamb= 25oC)1.BASECollector currentDimensions In Millimeters Dimensions In Inches2.COLLECTORSymbolMin Max Min MaxICM : 1 A3.EMITTERA 1.400 1.600 0.055 0.063b 0.320 0.520 0.013 0

NPN TRIPLE DIFFUSED2SD1651 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) TO-3PML High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Collector Current

2SD1650 SILICON DIFFUSED POWER TRANSISTORGENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,primarily for use in horizontal deflection circuites of colour television receiversQUICK REFERENCE DATA TO-3PMLSYMBOL PARAMETER CONDITIONS MIN MAX UNITCollector-emitter voltage peak value VBE = 0VVCESM - 1500 VCo

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 1. EMITTER 2SD1616A TRANSISTOR (NPN) 2. COLLECTOR FEATURE 3. BSAE Power dissipation MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Co

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD1664 TRANSISTOR (NPN) 1. BASE FEATURES Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) 2. COLLECTOR 1 Complements to 2SB1132 2 3. EMITTER 3 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage

Product Specification www.jmnic.comSilicon Power Transistors 2SD1634 DESCRIPTION With TO-220Fa package DARLINGTON High speed switching Good linearity of hFE APPLICATIONS Power switching PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL PARAMETER CONDITIONS VALUE

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1638 DESCRIPTION With TO-126 package DARLINGTON APPLICATIONS For low frequency and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Co

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SD1651 DESCRIPTION With TO-3PML package Built-in damper diode High breakdown voltage High speed switching APPLICATIONS For color TV horizontal output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PML) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1650 DESCRIPTION With TO-3PML package Built-in damper diode High breakdown voltage High speed switching APPLICATIONS For color TV horizontal output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PML) and symbol ABSOLUTE MAXIMUM RATINGS AT T

2SD1664TRANSISTOR (NPN)SOT-89 FEATURES Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) 1. BASE Complements to 2SB1132 2. COLLECTOR 1 MAXIMUM RATINGS (TA=25 unless otherwise noted) 2 Symbol Parameter Value Units3. EMITTER 3 VCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 32 VVEBO Emitter-Base Voltage 5 VIC Collector Current -Conti

2SD1616A(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 1 A Dimensions in inches and (millimeters)PC C

2SD1664SOT-89 Transistor(NPN)1. BASE SOT-892. COLLECTOR 1 4.6B4.42 1.61.81.41.43. EMITTER 3 2.64.25Features2.43.75 0.8 Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) MIN0.530.40 Complements to 2SB1132 0.480.442x)0.13 B0.35 0.371.53.0MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimete

2SD16162SD1616ANPN TransistorsTO-921. EMITTER122. COLLECTOR33. BASEABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating Symbol 2SD16116 2SD1616A UnitCollector-Emitter Voltage VCEO 50 60 VdcCollector-Base Voltage VCBO60 120 VdcEmitter-Base Voltage VEBO6.0 VdcCollector Current IC1.0 AdcPD 0.75Total Device Dissipation T =25 C WAJunction Temperature T 150j C-55

2SD1664NPN Epitaxial Planar TransistorsP b Lead(Pb)-Free1. BASE2. COLLECTOR13. EMITTER23Features:* Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA)SOT-89ABSOLUTE MAXIMUM RATINGS (TA=25C)Rating Symbol Limits UnitVCBO VCollector-Base Voltage40VCEOVCollector-Emitter Voltage 32VEBOVEmitter-Base Voltage 5.0Collector CurrentIC A1.0Collecto

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-89 Plastic-Encapsulate Transistors SOT-89 2SD1664 TRANSISTOR (NPN) 1. BASE FEATURES Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) 2. COLLECTOR 1 Complements to 2SB1132 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V

2SD1664 Rev.D Nov.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features , 2SB1132 Low saturation voltage, complements the 2SB1132. / Applications Medium power amplifier applications. / Equ

ST 2SD1664U NPN SILICON EPITAXIAL MEDIUM POWER TRANSISTOR Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 32 VEmitter Base Voltage VEBO 5 VCollector Current - DC IC 1 A Collector Current - Pulse 1) ICP 2 A 0.5 Ptot W Total Power Dissipation2 2) Junction Temperature TJ 150 Storage Te

ST 2SD1691T NPN Silicon Epitaxial Power Transistor For Low-Frequencey Power Amplifiers and Mid-Speed Switching The transistor is subdivided into three groups, M, L and K, according to its DC-DC current gain. ECBTO-126 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Symbol Value UnitParameter VCBO 60 VCollector to Base Voltage VCEO 60 VCollector to Emitter

ST 2SD1664U NPN SILICON EPITAXIAL MEDIUM POWER TRANSISTOR Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 32 VEmitter Base Voltage VEBO 5 VCollector Current - DC IC 1 A Collector Current - Pulse 1) ICP 2 A 0.5 Ptot W Total Power Dissipation2 2) Junction Temperature TJ 150 Storage Te

SMD Type TransistorsNPN Transistors2SD1624 Features1.70 0.1 Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Complementary to 2SB1124 0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Em

SMD Type TransistorsNPN Transistors2SD16231.70 0.1 Features Low collector-to-emitter saturation voltage. Large current capacity and wide ASO.0.42 0.10.46 0.1 Fast switching speed. Complementary to 2SB11231.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - E

SMD Type TransistorsNPN Transistors2SD16141.70 0.1 Features High DC Current Gain:hFE 135 to 600. Low VCE(sat) Complementary to 2SB11140.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 6 C

SMD Type TransistorsNPN Transistors2SD1618 Features 1.70 0.1 Low collector-to-emitter saturation voltage. Very small size making it easy to provide highdensity, small-sized hybrid ICs.0.42 0.10.46 0.1 Complementary to 2SB11181.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO

SMD Type TransistorsNPN Transistors2SD16151.70 0.1 Features Low VCE(sat) Complementary to 2SB11150.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 1A Col

SMD Type TransistorsNPN Transistors2SD16641.70 0.1FeaturesLow VCE(sat)Compliments to 2SB11320.42 0.10.46 0.11.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO 40 VCollector-Emitter Voltage VCEO 32 VEmitter-Base Voltage VEBO 5 VCollector Current (DC) 1 AICPW=20ms, duty=1/2 2 ACollector Power Di

SMD Type TransistorsNPN Transistors2SD1615A1.70 0.1 Features Low VCE(sat) Complementary to 2SB1115A0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 60 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 1A

SMD Type TransistorsNPN Transistors2SD16191.70 0.1 Features Very small size making it easy to provide highdensity, small-sized hybrid ICs. Complementary to 2SB11190.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 25 V Emitt

SMD Type TransistorsNPN Transistors2SD16211.70 0.1 Features Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed.0.42 0.10.46 0.1 Complementary transistor with the 2SB11211.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 3

SMD Type TransistorsNPN Transistors2SD1628SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=5A Collector Emitter Voltage VCEO=20V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO

SMD Type TransistorsNPN Transistors2SD1620SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=3A Collector Emitter Voltage VCEO=10V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEX 20V Collector - Emitter Voltag

SMD Type TransistorsNPN Transistors2SD1626SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=50V Complementary to 2SB11260.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 5

SMD Type TransistorsNPN Transistors2SD1699SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.8A Collector Emitter Voltage VCEO=80V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 100 Collector - Emitter Voltage VCEO 80 V Emitter - Base Voltage V

SMD Type TransistorsNPN Transistors2SD1625SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.7A Collector Emitter Voltage VCEO=50V Complementary to 2SB11250.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 5

SMD Type TransistorsNPN Transistors2SD16221.70 0.1 Features Very small size making it easy to provide highdensity, small-sized hybrid ICs.0.42 0.10.46 0.1 Complementary to 2SB11221.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitt

SMD Type TransistorsNPN Transistors2SD1627SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=25V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO

CHENMKO ENTERPRISE CO.,LTD2SD1664GPSURFACE MOUNTNPN Switching Transistor VOLTAGE 32 Volts CURRENT 1 AmpereAPPLICATION* Telephone and proferssional communction equipment.* Other switching applications.FEATURESC-62/SOT-89* Suitable for high packing density.* Low voltage (Max.=32V) .* High saturation current capability.* Voltage controlled small signal switch. 4.6MAX. 1

2SD1624 Features1.70 0.1 Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Complementary to 2SB1124 0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO 60Collector - Emitter Voltage VCEO 50 VEmitter - Base Volta

2SD1623NPN-Silicon General use Transistors1W 1.5A25V ApplicationsCan be used for switching and amplifying in various 4electrical and electronic circuit. Maximum ratings1 2 3Parameters Symbol Rating Unit SOT-89 V VCEO 25Collector-emitter voltage (IB=0) VCBO 40 VCollector-base voltageIE=0 Marking VEBO 6 VEmitter-base voltageIC=0 2SD1623=DFS

2SD1614NPN-Silicon General use Transistors41W 1.5A25V 3ApplicationsCan be used for switching and amplifying in various 1 21 2 3 electrical and electronic circuit. SOT-89 1 Base 2/4 Collector 3 EmitterMaximum ratings Parameters Symbol Rating UnitV VCEO 25Collector-emitter voltage (IB=0) VCBO 40 VCollector-base voltageIE=0 VEBO 6 VEmitter-base

2SD1628 SOT-89 NPN Transistors Features Collector Current Capability IC=5A3 Collector Emitter Voltage VCEO=20V21.Base12.Collector3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 6 Collector C

Plastic-Encapsulate TransistorsFEATURES2SD1664 (NPN) Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) Complements to 2SB1132Maximum Ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage VCBO 40 VCollector-Emitter Voltage VCEO 32 VEmitter-Base Voltage VEBO 5 VCollector Current -Continuous IC 1 A1. BASECollector Power dissipa

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1624DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V (Min)(BR)CEOFast switching speed100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for L Amp Electronic Governor applications.FABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER

isc Silicon NPN Power Transistor 2SD1683DESCRIPTIONHigh Collector Current-I = 4ACLow Saturation Voltage -: V = 0.5V(Max)@ I = 2ACE(sat) CComplement to Type 2SB1143Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in voltage regulations, relay drivers, lampdrivers and electrical equipment.ABSOLUTE MAX

isc Silicon NPN Darlington Power Transistor 2SD1670DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain-: h = 1000( Min.) @ I = 10AFE CLow Collector Saturation Voltage-: V = 1.5V(Max)@ I = 10ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor low speed high current s

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1607DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 5AFE CCollector-Emitter Sustaining Voltage-: V = 120V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

isc Silicon NPN Power Transistor 2SD1684DESCRIPTION Collector Saturation VoltageLow: V = -0.5V(Max)@I = -0.5ACE(sat) CWide Area of Safe OperationComplement to Type 2SB1144Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for 100V/1.5A Switching ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

isc Silicon NPN Power Transistor 2SD1632DESCRIPTIONCollector-Base Breakdown Voltage-: V = 1300V (Min.)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

isc Silicon NPN Darlington Power Transistor 2SD1634DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)High DC Current Gain: h = 1500(Min) @I = 5AFE CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

isc Silicon NPN Darlington Power Transistor 2SD1633DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)High DC Current Gain: h = 1500(Min) @I = 3AFE CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

isc Silicon NPN Darlington Power Transistor 2SD1638DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 1AFE CCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 1ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequenc

isc Silicon NPN Power Transistor 2SD1691DESCRIPTIONHigh Collector Current -I = 5ACLow Collector Saturation Voltage: V = 0.3V(Max.)@ I = 2ACE(sat) CComplement to Type 2SB1151Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converter, or driver of solenoidor motor.ABSOLUTE MAXIMUM RATINGS(T =

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1673DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh DC Current Gain-: h = 1000( Min.) @ I = 7AFE CLow Collector Saturation Voltage-: V = 1.5V(Max)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor lo

isc Silicon NPN Power Transistor 2SD1677DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1619DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 25V (Min)(BR)CEOComplement to Type 2SB1119100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for L Amp Electronic Governor applications.FABSOLUTE MAXIMUM RATINGS(Ta=25)S

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1678DESCRIPTIONHigh DC Current Gain-h = 750(Min)@ I = 15AFE CHigh Collector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applicationsA

isc Silicon NPN Darlington Power Transistor 2SD1601DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 2AFE CComplement to Type 2SB1101Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM RA

isc Silicon NPN Darlington Power Transistor 2SD1646DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 1AFE CLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAX

isc Silicon NPN Power Transistor 2SD1666DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB1133Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency and general purposeamplifier applications.ABSOLUTE MAXI

isc Silicon NPN Power Transistor 2SD1653DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag

isc Silicon NPN Power Transistor 2SD1667DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 0.4V(Max.)@ I = 3ACE(sat) CComplement to Type 2SB1134Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers,high-speed inverters,and othergeneral hig

isc Silicon NPN Power Transistor 2SD1651DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal deflection outputapplicaitionsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

isc Silicon NPN Power Transistor 2SD1663DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 1300V (Min.)(BR)CBOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

isc Silicon NPN Darlington Power Transistor 2SD1608DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 120V(Min)CEO(SUS)High DC Current Gain: h = 1000(Min) @I = 4AFE CHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium speed power switching applications.ABSOLUTE MAXIMUM RATINGS

isc Silicon NPN Power Transistor 2SD1649DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal deflection outputapplicaitions.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

isc Silicon NPN Darlington Power Transistor 2SD1602DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 2AFE CComplement to Type 2SB1102Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM RA

isc Silicon NPN Power Transistor 2SD1650DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal output applicaitionsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Col

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1640DESCRIPTIONHigh DC Current Gain-: h = 4000(Min)@ I = 1AFE CCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 1ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSD

isc Silicon NPN Power Transistor 2SD1680DESCRIPTIONCollector-Base Breakdown Voltage-: V = 330V(Min)(BR)CBOHigh Power DissipationHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

isc Silicon NPN Darlington Power Transistor 2SD1606DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 3AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

isc Silicon NPN Darlington Power Transistor 2SD1604DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 4AFE CComplement to Type 2SB1104Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM RA

isc Silicon NPN Power Transistor 2SD1669DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 0.4V(Max.)CE(sat)Wide Area of Safe OperationComplement to Type 2SB1136Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers,high speed inverters,c

isc Silicon NPN Power Transistor 2SD1654DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag

isc Silicon NPN Power Transistor 2SD1668DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 0.4V(Max.)CE(sat)Wide Area of Safe OperationComplement to Type 2SB1135Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers,high speed inverters,c

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1647DESCRIPTIONLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 1ACE(sat) CHigh DC Current Gain: h = 1000(Min) @I = 1.0AFE CLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for ge

isc Silicon NPN Darlington Power Transistor 2SD1692DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 100V(min.)CEO(SUS)DC Current Gain: h = 2000(Min.) @ I = 1.5 AFE CComplement to Type 2SB1149Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose amplifier applications.ABSOLUTE MAXI

isc Silicon NPN Power Transistor 2SD1652DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal deflection outputapplicaitionsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

isc Silicon NPN Power Transistor 2SD1656DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1609DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 160V(Min)(BR)CEOGood Linearity of hFE100% avalanche testedComplement to Type 2SB1109Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency and high-voltage amplifierapplica

isc Silicon NPN Darlington Power Transistor 2SD1605DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 1.5AFE CComplement to Type 2SB1105Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM

isc Silicon NPN Power Transistor 2SD1655DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag

isc Silicon NPN Darlington Power Transistor 2SD1603DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 4AFE CComplement to Type 2SB1103Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM RA

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1600DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 4AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 4ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS