2SD16 datasheet, аналоги, основные параметры
Наименование производителя: 2SD16 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 70 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 125 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 2 MHz
Статический коэффициент передачи тока (hFE): 10
Корпус транзистора: TO3
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2SD16 даташит
2sd1658.pdf
2SD1658 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD1658 Micro Motor Drive, Hammer Drive Applications Unit mm Switching Applications Power Amplifier Applications High DC current gain hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C B Zener diode included between c
2sd1631.pdf
2SD1631 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1631 Micro Motor Drive, Hammer Drive Applications Unit mm Switching Applications Power Amplifier Applications High DC current gain hFE = 4000 (min) (V = 2 V, I = 150 mA) CE C Low saturation voltage V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C B Maximum Ratings (
2sd1662.pdf
2SD1662 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor) 2SD1662 High Current Switching Applications Unit mm High DC current gain hFE = 1000 (min) (V = 3 V, I = 15 A) CE C Low collector saturation voltage V = 1.5 V (max) (I = 15 A) CE (sat) C Monolithic construction with built-in base-emitter shunt resistor. Maximum Ratings (Ta
2sd1624.pdf
Ordering number 2019A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1124/2SD1624 High Current Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2038 [2SB1124/2SD1624] Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed.
2sb1124 2sd1624.pdf
Ordering number ENN2019A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1124/2SD1624 High Current Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2038A [2SB1124/2SD1624] Features 4.5 1.5 1.6 Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Fast swi
2sd1623.pdf
Ordering number ENN1727D 2SB1123 / 2SD1623 PNP / NPN Epitaxial Planar Silicon Transistors 2SB1123 / 2SD1623 High-Current Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2038A [2SB1123 / 2SD1623] Features 4.5 1.5 Adoption of FBET, MBIT processes. 1.6 Low collector-to-emitter sat
2sd1683.pdf
Ordering number 2063A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1143/2SD1683 50V/4A Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2042A [2SB1143/2SD1683] Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO. B Base C C
2sb1143 2sd1683.pdf
Ordering number ENN2063A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1143/2SD1683 50V/4A Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2042B [2SB1143/2SD1683] Features 8.0 4.0 3.3 Adoption of FBET, MBIT processes. 1.0 1.0 Low saturation voltage. Large current capacity and
2sd1618.pdf
Ordering number 1784B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1118/2SD1618 Low-Voltage High-Current Amplifier, Muting Applications Features Package Dimensions Low collector-to-emitter saturation voltage. unit mm Very small size making it easy to provide high- 2038 density, small-sized hybrid IC s. [2SB1118/2SD1618] E Emitter C Collector B Base ( ) 2SB111
2sd1684.pdf
Ordering number 2041A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1144/2SD1684 100V/1.5A Switching Applications Features Package Dimensions Adoption of FBET and MBIT processes. unit mm High breakdown voltage. 2042B Low saturation voltage. [2SB1144/2SD1684] Plastic-covered heat sink facilitating high-density mounting. 1 Emitter 2 Collector 3 Base ( ) 2
2sd1681.pdf
Ordering number 2020A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1141/2SD1681 18V/1.2A Switching Applications Applications Package Dimensions Converters, relay drivers, low-voltage and high unit mm power AF Amplifier. 2042A [2SB1141/2SD1681] Features Low saturation voltage and excellent linearity of hFE. Wide ASO. B Base C Collector E Emitter ( ) 2SB1141
2sd1619.pdf
Ordering number 1785A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1119/2SD1619 LF Amplifier, Electronic Governor Applications Features Package Dimensions Very small size making it easy to provide high- unit mm density, small-sized hybrid IC s. 2038 [2SB1119/2SD1619] E Emitter C Collector B Base ( ) 2SB1119 SANYO PCP (Bottom view) Specifications Absolute Maxi
2sd1621.pdf
Ordering number 1787A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1121/2SD1621 High-Current Driver Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2038 [2SB1121/2SD1621] Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wid
2sd1685.pdf
Ordering number EN2042A NPN Epitaxial Planar Silicon Transistor 2SD1685 20V/5A Switching Applications Applications Package Dimensions Strobe, voltage regulators, relay drivers, lamp unit mm drivers. 2042B [2SD1685] 8.0 Features 4.0 3.3 1.0 1.0 Low saturation voltage. Large current capacity. 3.0 Fast switching time. No insulator required when mounting becau
2sd1651c.pdf
Ordering number ENN7086 2SD1651C www.DataSheet4U.com NPN Triple Diffused Planar Silicon Transistor 2SD1651C Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage(VCBO=1500V). 2174A High reliability(Adoption of HVP process). [2SD1651C] 5.6 Adoption of MBIT process. 3.4 16.0 3.1 On-chip
2sd1628.pdf
Ordering number EN1781A NPN Epitaxial Planar Silicon Transistor 2SD1628 High-Current Switching Applications Applications Package Dimensions Strobe DC-DC converters, relay drivers, hammer unit mm drivers, lamp drivers, motor drovers. 2038A [2SD1628] 4.5 Features 1.5 1.6 Low saturation voltage. High hFE. Large current capacity. Very small size making it easy t
2sd1653.pdf
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2sd1620.pdf
Ordering number EN1719C 2SD1620 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SD1620 1.5V, 3V Strobe Applications Features Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted. Large current capacity and highly resistant to breakdown. Excellent linearity of hFE in the region from low current to high cur
2sd1667.pdf
Ordering number 2091B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1134/2SD1667 50V/5A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, and other general unit mm high-current switching applications. 2041A [2SB1134/2SD1667] Features Low-saturation collector-to-emitter voltage VCE(sat)= 0.4V max/IC=( )3A, IB=( )0.3A.
2sb1133 2sd1666.pdf
Ordering number ENN3031A 2SB1133 / 2SD1666 PNP / NPN Triple Diffused Planar Silicon Transistors 2SB1133 / 2SD1666 Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions Wide ASO(Adoption of MBIT process). unit mm Micaless package facilitating easy mounting. 2041A High reliability. [2SB1133 / 2SD1666] 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7
2sd1649.pdf
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2sd1626.pdf
Ordering number 1721A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1126/2SD1626 For Various Drivers Applications Package Dimensions Relay drivers, hammer drivers, lamp drivers, motor unit mm drivers, 2038 [2SB1126/2SD1626] Features High DC current gain (4000 or greater). Large current capacity. Very small size making it easy to provide high- density, small-sized
2sd1669.pdf
Ordering number 2092B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1136/2SD1669 50V/12A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit mm other genral high-current switching applications. 2041A [2SB1136/2SD1669] Features Low-saturation collector-to-emitter voltage VCE(sat)= 0.5V (PNP), 0.4V (NPN) max.
2sd1668.pdf
Ordering number 2094B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1135/2SD1668 50V/7A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit mm other general high-current switching applications. 2041A [2SB1135/2SD1668] Features Low-saturation collector-to-emitter voltage VCE(sat)= 0.4V max. Wide ASO lead
2sd1652.pdf
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2sd1656.pdf
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2sd1682.pdf
Ordering number 2060A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1142/2SD1682 50V/2.5A High-Speed Switching Applications Applications Package Dimensions Power supplies, relay drivers, lamp drivers. unit mm 2042A Features [2SB1142/2SD1682] Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO. B Base C Collector ( )
2sb1123 2sd1623.pdf
Ordering number EN1727E 2SB1123 / 2SD1623 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SB1123 / 2SD1623 High-Current Switching Applications Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment. Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capaci
2sd1625.pdf
Ordering number 2017A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1125/2SD1625 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2038 [2SB1125/2SD1625] Features High DC current gain. Large current capacity and wide ASO. Very small size making it easy to provide high- dens
2sd1622.pdf
Ordering number 2040A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1122/2SD1622 Low-Frequency Power Amplifier Applications Applications Package Dimensions Voltage regulators relay drivers, lamp drivers, unit mm electrical equipment. 2038 [2SB1122/2SD1622] Features Adoption of FBET process.. Very small size making it easy to provide high- density hybrid IC s. E E
2sd1627.pdf
Ordering number EN2016A NPN Epitaxial Planar Silicon Transistor 2SD1627 Driver Applications Applications Package Dimensions Motor drivers, hammer drivers, relay drivers, voltage unit mm regulator control. 2038A [2SD1627] 4.5 Features 1.5 1.6 High DC current gain (hFE 4000). Wide ASO. Very small size making it easy to provide high- density, small-sized hybrid
2sd1616a.pdf
DATA SHEET SILICON TRANSISTORS 2SD1616, 2SD1616A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT mm) Low VCE(sat) VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA) Large PT in small dimension with versatility PT = 0.75 W, VCEO = 50/60 V, IC(DC) = 1.0 A Complementary transistor with the 2SB1116 and 1
2sd1615.pdf
DATA SHEET SILICON TRANSISTORS 2SD1615, 2SD1615A NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS World Standard Miniature Package in millimeters Low VCE (sat) VCE(sat) = 0.15 V Complement to 2SB111
2sd1691.pdf
DATA SHEET SILICON POWER TRANSISTOR 2SD1691 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCEY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT mm) Large current capacity and low VCE(sat) IC(DC) = 5.0 A, IC(pulse) = 8.0 A VCE(sat) = 0.1 V TYP. (@IC = 2.0 A, IB = 0.2 A) Large power dissipation TO-126 type power transistor PT = 1.3 W (@Ta = 25
2sd1615a.pdf
DATA SHEET SILICON TRANSISTORS 2SD1615, 2SD1615A NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS World Standard Miniature Package in millimeters Low VCE (sat) VCE(sat) = 0.15 V Complement to 2SB111
2sd1695.pdf
DATA SHEET SILICON POWER TRANSISTOR 2SD1695 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD1695 is a Darlington connection transistor and PACKAGE DRAWING (UNIT mm) incorporates a dumper diode between the collector and emitter and a constant voltage diode and protection elements between the collector and base. T
2sd1692.pdf
DATA SHEET SILICON POWER TRANSISTOR 2SD1692 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FEATURES PACKAGE DRAWING (UNIT mm) High DC current gain due to Darlington connection Large current capacity and low VCE(sat) Large power dissipation TO-126 type power transistor Complementary transistor 2SB1149 ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) Parameter
2sd1664.pdf
Transistors Medium Power Transistor (32V, 1A) 2SD1664 / 2SD1858 FFeatures FExternal dimensions (Units mm) 1) Low VCE(sat), VCE(sat) = 0.15V (typical). (IC/IB = 500mA/50mA) 2) Complements the 2SB1132 / 2SB1237. FStructure Epitaxial planar type NPN silicon transistor FAbsolute maximum ratings (Ta = 25_C) (96-207-D12) 249 Transistors 2SD1664 / 2SD1858 FElectrical characteristics (
2sb1124 2sd1624.pdf
Ordering number EN2019B 2SB1124/2SD1624 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 50V, 3A, Low VCE sat , PNP NPN Single PCP Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption of FBET, MBIT processes Low collector-to-emitter saturation voltage Fast switching speed Large current capacity and wide
2sd1618.pdf
Ordering number EN1784C 2SD1618 Bipolar Transistor http //onsemi.com ( ) 15V, 0.7A, Low VCE sat , NPN Single PCP Features Low collector-to-emitter saturation voltage Very small size making it easy to provide highdensity, small-sized hybrid IC s Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V
2sd1628.pdf
Ordering number EN1781B 2SD1628 Bipolar Transistor http //onsemi.com ( ) 20V, 5A, Low VCE sat , NPN Single PCP Applications Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drovers Features Low saturation voltage High hFE Large current capacity Very small size making it easy to provide highdensity, small-sized hybrid IC s Halo
2sd1620.pdf
Ordering number EN1719D 2SD1620 Bipolar Transistor http //onsemi.com ( ) 10V, 3A, Low VCE sat , NPN Single PCP Features Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted Large current capacity and highly resistant to breakdown Excellent linearity of hFE in the region from low current to high current Ultrasmall size support
2sb1123 2sd1623.pdf
Ordering number EN1727F 2SB1123/2SD1623 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 50V, 2A, Low VCE sat , PNP NPN Single PCP Applicaitons Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption of FBET, MBIT processes Low collector-to-emitter saturation voltage Large current capacity and wide ASO Fast switching sp
2sd1645.pdf
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2sd1679 e.pdf
Transistor 2SD1679 Silicon NPN epitaxial planer type For low-frequency output amplification Unit mm +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 18V zener diode is built in between collector and base. Low collector to emitter saturation voltage VCE(sat). 1 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and 3
2sd1632.pdf
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2sd1634.pdf
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2sd1633.pdf
Power Transistors 2SD1633 Silicon NPN triple diffusion planar type darlington Unit mm For voltage switching 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features 3.1 0.1 High-speed switching Satisfactory linearity of forward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 Absolute Maximum Rating
2sd1611.pdf
Power Transistors 2SD1611 Silicon NPN triple diffusion planar type Darlington Unit mm 8.5 0.2 3.4 0.3 For power amplification 6.0 0.5 1.0 0.1 Features 1.5max. 1.1max. High foward current transfer ratio hFE High collector to base voltage VCBO 0.8 0.1 0.5max. N type package enabling direct soldering of the radiating fin to 2.54 0.3 the printed circuit board, etc. of sma
2sd1641.pdf
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2sd1664.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SD1664 NPN SILICON TRANSISTOR MEDIUM POWER NPN TRANSISTOR DESCRIPTION The UTC 2SD1664 is an epitaxial planar type NPN silicon transistor. FEATURES *Low VCE(SAT) VCE (SAT)= 0.15V(Typ.) (IC/IB= 500mA/50mA) * Complement the 2SB1132. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2
2sd1691.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SD1691 NPN SILICON TRANSISTOR LOW COLLECTOR SATURATION VOLTAGE 1 1 LARGE CURRENT TO-220F1 TO-220 FEATURES *High Power Dissipation 1 1 *Complementary to 2SB1151 TO-251 TO-252 1 1 TO-126C TO-126 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2SD1691L-x-TA3-T 2SD1691
2sd1616 2sd1616a.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SD1616/A NPN SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR 1 1 SOT-223 SOT-89 DESCRIPTION * Audio frequency power amplifier * Medium speed switching 1 SIP-3 1 1 TO-92 TO-92SP ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen-Free 1 2 3 2SD1616L-x-AA3-B 2SD1616G-x-AA3-B SOT-22
2sd1609.pdf
UTC 2SD1609 NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR FEATURES * Low frequency high voltage amplifier 1 TO-126 1 EMITTER 2 COLLECTOR 3 BASE ABSOLUTE MAXIMUM RATINGS (Ta=25 C, unless otherwise specified) PARAMETER SYMBOL MIN MAX UNIT Collector-Base Voltage BVCBO 160 V Collector-Emitter Voltage BVCEO 160 V Emitter-Base Voltage BVEBO 5 V Collector Curre
2sd1606.pdf
2SD1606 Silicon NPN Triple Diffused Application Low frequency power amplifier Outline TO-220AB 2 1 1. Base ID 2. Collector (Flange) 1 3. Emitter 2.6 k 160 2 3 (Typ) (Typ) 3 2SD1606 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7V Collector cu
2sd1609 2sd1610.pdf
2SD1609, 2SD1610 Silicon NPN Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SB1109 and 2SB1110 Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SD1609 2SD1610 Unit Collector to base voltage VCBO 160 200 V Collector to emitter voltage VCEO 160 200 V Emitter to base voltage VEB
2sd1616a.pdf
2SD1616A 1A , 120V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Power dissipation A D Millimeter REF. Min. Max. B A 4.40 4.70 CLASSIFICATION OF hFE (1) B 4.30 4.70 C 12.70 - D 3.30 3.81 Product-Rank 2SD1616A-L 2SD1616A-K 2SD1616A-U E 0.36 0.56 F 0.36 0.51
2sd1664.pdf
2SD1664 NPN Silicon Elektronische Bauelemente General Purpose Transistor R o H S C o m p lia n t P ro d u ct D D1 A Features SOT-89 b1 1 2 b Power dissipation C e 3 e1 PCM 0.5 W (Tamb= 25oC) 1.BASE Collector current Dimensions In Millimeters Dimensions In Inches 2.COLLECTOR Symbol Min Max Min Max ICM 1 A 3.EMITTER A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0
2sd1651.pdf
NPN TRIPLE DIFFUSED 2SD1651 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(Damper Diode BUILT IN) High Collector-Base Voltage(VCBO=1500V) TO-3PML High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25oC) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 1500 V Emitter-Base voltage VEBO 6 V Collector Current
2sd1650.pdf
2SD1650 SILICON DIFFUSED POWER TRANSISTOR GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode, primarily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA TO-3PML SYMBOL PARAMETER CONDITIONS MIN MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 1500 V Co
2sd1616a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 1. EMITTER 2SD1616A TRANSISTOR (NPN) 2. COLLECTOR FEATURE 3. BSAE Power dissipation MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Co
2sd1664.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD1664 TRANSISTOR (NPN) 1. BASE FEATURES Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) 2. COLLECTOR 1 Complements to 2SB1132 2 3. EMITTER 3 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage
2sd1634.pdf
Product Specification www.jmnic.com Silicon Power Transistors 2SD1634 DESCRIPTION With TO-220Fa package DARLINGTON High speed switching Good linearity of hFE APPLICATIONS Power switching PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25 SYMBOL PARAMETER CONDITIONS VALUE
2sd1638.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1638 DESCRIPTION With TO-126 package DARLINGTON APPLICATIONS For low frequency and power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Co
2sd1651.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1651 DESCRIPTION With TO-3PML package Built-in damper diode High breakdown voltage High speed switching APPLICATIONS For color TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc
2sd1650.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1650 DESCRIPTION With TO-3PML package Built-in damper diode High breakdown voltage High speed switching APPLICATIONS For color TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol ABSOLUTE MAXIMUM RATINGS AT T
2sd1664.pdf
2SD1664 TRANSISTOR (NPN) SOT-89 FEATURES Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) 1. BASE Complements to 2SB1132 2. COLLECTOR 1 MAXIMUM RATINGS (TA=25 unless otherwise noted) 2 Symbol Parameter Value Units 3. EMITTER 3 VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Conti
2sd1616a.pdf
2SD1616A(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 1 A Dimensions in inches and (millimeters) PC C
2sd1664 sot-89.pdf
2SD1664 SOT-89 Transistor(NPN) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 2 1.6 1.8 1.4 1.4 3. EMITTER 3 2.6 4.25 Features 2.4 3.75 0.8 Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) MIN 0.53 0.40 Complements to 2SB1132 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimete
2sd1616.pdf
2SD1616 2SD1616A NPN Transistors TO-92 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol 2SD16116 2SD1616A Unit Collector-Emitter Voltage V CEO 50 60 Vdc Collector-Base Voltage VCBO 60 120 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current IC 1.0 Adc PD 0.75 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C -55
2sd1664.pdf
2SD1664 NPN Epitaxial Planar Transistors P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 1 3. EMITTER 2 3 Features * Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) SOT-89 ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Limits Unit VCBO V Collector-Base Voltage 40 VCEO V Collector-Emitter Voltage 32 VEBO V Emitter-Base Voltage 5.0 Collector Current IC A 1.0 Collecto
2sd1664.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-89 Plastic-Encapsulate Transistors SOT-89 2SD1664 TRANSISTOR (NPN) 1. BASE FEATURES Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) 2. COLLECTOR 1 Complements to 2SB1132 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V
2sd1664.pdf
2SD1664 Rev.D Nov.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features , 2SB1132 Low saturation voltage, complements the 2SB1132. / Applications Medium power amplifier applications. / Equ
st2sd1664u.pdf
ST 2SD1664U NPN SILICON EPITAXIAL MEDIUM POWER TRANSISTOR Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 32 V Emitter Base Voltage VEBO 5 V Collector Current - DC IC 1 A Collector Current - Pulse 1) ICP 2 A 0.5 Ptot W Total Power Dissipation 2 2) Junction Temperature TJ 150 Storage Te
st2sd1691t.pdf
ST 2SD1691T NPN Silicon Epitaxial Power Transistor For Low-Frequencey Power Amplifiers and Mid-Speed Switching The transistor is subdivided into three groups, M, L and K, according to its DC-DC current gain. E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Symbol Value Unit Parameter VCBO 60 V Collector to Base Voltage VCEO 60 V Collector to Emitter
st2sd1664u-p st2sd1664u-q st2sd1664u-r.pdf
ST 2SD1664U NPN SILICON EPITAXIAL MEDIUM POWER TRANSISTOR Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 32 V Emitter Base Voltage VEBO 5 V Collector Current - DC IC 1 A Collector Current - Pulse 1) ICP 2 A 0.5 Ptot W Total Power Dissipation 2 2) Junction Temperature TJ 150 Storage Te
2sd1624.pdf
SMD Type Transistors NPN Transistors 2SD1624 Features 1.70 0.1 Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Complementary to 2SB1124 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Em
2sd1623.pdf
SMD Type Transistors NPN Transistors 2SD1623 1.70 0.1 Features Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. 0.42 0.1 0.46 0.1 Fast switching speed. Complementary to 2SB1123 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - E
2sd1614.pdf
SMD Type Transistors NPN Transistors 2SD1614 1.70 0.1 Features High DC Current Gain hFE 135 to 600. Low VCE(sat) Complementary to 2SB1114 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 6 C
2sd1618.pdf
SMD Type Transistors NPN Transistors 2SD1618 Features 1.70 0.1 Low collector-to-emitter saturation voltage. Very small size making it easy to provide highdensity, small-sized hybrid IC s. 0.42 0.1 0.46 0.1 Complementary to 2SB1118 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO
2sd1615.pdf
SMD Type Transistors NPN Transistors 2SD1615 1.70 0.1 Features Low VCE(sat) Complementary to 2SB1115 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 1 A Col
2sd1664.pdf
SMD Type Transistors NPN Transistors 2SD1664 1.70 0.1 Features Low VCE(sat) Compliments to 2SB1132 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage VEBO 5 V Collector Current (DC) 1 A IC PW=20ms, duty=1/2 2 A Collector Power Di
2sd1615a.pdf
SMD Type Transistors NPN Transistors 2SD1615A 1.70 0.1 Features Low VCE(sat) Complementary to 2SB1115A 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 60 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 1 A
2sd1619.pdf
SMD Type Transistors NPN Transistors 2SD1619 1.70 0.1 Features Very small size making it easy to provide highdensity, small-sized hybrid IC s. Complementary to 2SB1119 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 25 V Emitt
2sd1621.pdf
SMD Type Transistors NPN Transistors 2SD1621 1.70 0.1 Features Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. 0.42 0.1 0.46 0.1 Complementary transistor with the 2SB1121 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 3
2sd1628.pdf
SMD Type Transistors NPN Transistors 2SD1628 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=5A Collector Emitter Voltage VCEO=20V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO
2sd1620.pdf
SMD Type Transistors NPN Transistors 2SD1620 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=3A Collector Emitter Voltage VCEO=10V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEX 20 V Collector - Emitter Voltag
2sd1626.pdf
SMD Type Transistors NPN Transistors 2SD1626 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=50V Complementary to 2SB1126 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 5
2sd1699.pdf
SMD Type Transistors NPN Transistors 2SD1699 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=0.8A Collector Emitter Voltage VCEO=80V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 100 Collector - Emitter Voltage VCEO 80 V Emitter - Base Voltage V
2sd1625.pdf
SMD Type Transistors NPN Transistors 2SD1625 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=0.7A Collector Emitter Voltage VCEO=50V Complementary to 2SB1125 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 5
2sd1622.pdf
SMD Type Transistors NPN Transistors 2SD1622 1.70 0.1 Features Very small size making it easy to provide highdensity, small-sized hybrid IC s. 0.42 0.1 0.46 0.1 Complementary to 2SB1122 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitt
2sd1627.pdf
SMD Type Transistors NPN Transistors 2SD1627 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=25V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO
2sd1664gp.pdf
CHENMKO ENTERPRISE CO.,LTD 2SD1664GP SURFACE MOUNT NPN Switching Transistor VOLTAGE 32 Volts CURRENT 1 Ampere APPLICATION * Telephone and proferssional communction equipment. * Other switching applications. FEATURE SC-62/SOT-89 * Suitable for high packing density. * Low voltage (Max.=32V) . * High saturation current capability. * Voltage controlled small signal switch. 4.6MAX. 1
2sd1624-r 2sd1624-s 2sd1624-t 2sd1624-u.pdf
2SD1624 Features 1.70 0.1 Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Complementary to 2SB1124 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Volta
2sd1623.pdf
2SD1623 NPN-Silicon General use Transistors 1W 1.5A 25V Applications Can be used for switching and amplifying in various 4 electrical and electronic circuit. Maximum ratings 1 2 3 Parameters Symbol Rating Unit SOT-89 V VCEO 25 Collector-emitter voltage (IB=0) VCBO 40 V Collector-base voltage IE=0 Marking VEBO 6 V Emitter-base voltage IC=0 2SD1623=DFS
2sd1614xm 2sd1614xl.pdf
2SD1614 NPN-Silicon General use Transistors 4 1W 1.5A 25V 3 Applications Can be used for switching and amplifying in various 1 2 1 2 3 electrical and electronic circuit. SOT-89 1 Base 2/4 Collector 3 Emitter Maximum ratings Parameters Symbol Rating Unit V VCEO 25 Collector-emitter voltage (IB=0) VCBO 40 V Collector-base voltage IE=0 VEBO 6 V Emitter-base
2sd1628-e 2sd1628-f 2sd1628-g.pdf
2SD1628 SOT-89 NPN Transistors Features Collector Current Capability IC=5A 3 Collector Emitter Voltage VCEO=20V 2 1.Base 1 2.Collector 3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 6 Collector C
2sd1664.pdf
Plastic-Encapsulate Transistors FEATURES 2SD1664 (NPN) Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA) Complements to 2SB1132 Maximum Ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 32 V Emitter-Base Voltage VEBO 5 V Collector Current -Continuous IC 1 A 1. BASE Collector Power dissipa
2sd1624.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1624 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V (Min) (BR)CEO Fast switching speed 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for L Amp Electronic Governor applications. F ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER
2sd1683.pdf
isc Silicon NPN Power Transistor 2SD1683 DESCRIPTION High Collector Current-I = 4A C Low Saturation Voltage - V = 0.5V(Max)@ I = 2A CE(sat) C Complement to Type 2SB1143 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in voltage regulations, relay drivers, lamp drivers and electrical equipment. ABSOLUTE MAX
2sd1670.pdf
isc Silicon NPN Darlington Power Transistor 2SD1670 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain- h = 1000( Min.) @ I = 10A FE C Low Collector Saturation Voltage- V = 1.5V(Max)@ I = 10A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For low speed high current s
2sd1684.pdf
isc Silicon NPN Power Transistor 2SD1684 DESCRIPTION Collector Saturation Voltage Low V = -0.5V(Max)@I = -0.5A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB1144 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for 100V/1.5A Switching Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
2sd1632.pdf
isc Silicon NPN Power Transistor 2SD1632 DESCRIPTION Collector-Base Breakdown Voltage- V = 1300V (Min.) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
2sd1634.pdf
isc Silicon NPN Darlington Power Transistor 2SD1634 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) High DC Current Gain h = 1500(Min) @I = 5A FE C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a
2sd1633.pdf
isc Silicon NPN Darlington Power Transistor 2SD1633 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) High DC Current Gain h = 1500(Min) @I = 3A FE C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a
2sd1638.pdf
isc Silicon NPN Darlington Power Transistor 2SD1638 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 1A FE C Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 1A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequenc
2sd1691.pdf
isc Silicon NPN Power Transistor 2SD1691 DESCRIPTION High Collector Current -I = 5A C Low Collector Saturation Voltage V = 0.3V(Max.)@ I = 2A CE(sat) C Complement to Type 2SB1151 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter, or driver of solenoid or motor. ABSOLUTE MAXIMUM RATINGS(T =
2sd1673.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1673 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High DC Current Gain- h = 1000( Min.) @ I = 7A FE C Low Collector Saturation Voltage- V = 1.5V(Max)@ I = 5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For lo
2sd1677.pdf
isc Silicon NPN Power Transistor 2SD1677 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL
2sd1619.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1619 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 25V (Min) (BR)CEO Complement to Type 2SB1119 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for L Amp Electronic Governor applications. F ABSOLUTE MAXIMUM RATINGS(Ta=25 ) S
2sd1678.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1678 DESCRIPTION High DC Current Gain-h = 750(Min)@ I = 15A FE C High Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching applications A
2sd1601.pdf
isc Silicon NPN Darlington Power Transistor 2SD1601 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 2A FE C Complement to Type 2SB1101 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RA
2sd1646.pdf
isc Silicon NPN Darlington Power Transistor 2SD1646 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min.) (BR)CEO High DC Current Gain h = 1000(Min) @I = 1A FE C Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAX
2sd1666.pdf
isc Silicon NPN Power Transistor 2SD1666 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SB1133 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency and general purpose amplifier applications. ABSOLUTE MAXI
2sd1653.pdf
isc Silicon NPN Power Transistor 2SD1653 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag
2sd1667.pdf
isc Silicon NPN Power Transistor 2SD1667 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector Saturation Voltage- V = 0.4V(Max.)@ I = 3A CE(sat) C Complement to Type 2SB1134 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers,high-speed inverters,and other general hig
2sd1651.pdf
isc Silicon NPN Power Transistor 2SD1651 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal deflection output applicaitions ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
2sd1663.pdf
isc Silicon NPN Power Transistor 2SD1663 DESCRIPTION High Collector-Base Breakdown Voltage- V = 1300V (Min.) (BR)CBO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
2sd1608.pdf
isc Silicon NPN Darlington Power Transistor 2SD1608 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 120V(Min) CEO(SUS) High DC Current Gain h = 1000(Min) @I = 4A FE C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium speed power switching applications. ABSOLUTE MAXIMUM RATINGS
2sd1649.pdf
isc Silicon NPN Power Transistor 2SD1649 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal deflection output applicaitions. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM
2sd1602.pdf
isc Silicon NPN Darlington Power Transistor 2SD1602 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 2A FE C Complement to Type 2SB1102 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RA
2sd1650.pdf
isc Silicon NPN Power Transistor 2SD1650 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Col
2sd1640.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1640 DESCRIPTION High DC Current Gain- h = 4000(Min)@ I = 1A FE C Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 1A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS D
2sd1680.pdf
isc Silicon NPN Power Transistor 2SD1680 DESCRIPTION Collector-Base Breakdown Voltage- V = 330V(Min) (BR)CBO High Power Dissipation High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
2sd1606.pdf
isc Silicon NPN Darlington Power Transistor 2SD1606 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 3A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA
2sd1604.pdf
isc Silicon NPN Darlington Power Transistor 2SD1604 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 4A FE C Complement to Type 2SB1104 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RA
2sd1669.pdf
isc Silicon NPN Power Transistor 2SD1669 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector Saturation Voltage- V = 0.4V(Max.) CE(sat) Wide Area of Safe Operation Complement to Type 2SB1136 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers,high speed inverters,c
2sd1654.pdf
isc Silicon NPN Power Transistor 2SD1654 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag
2sd1668.pdf
isc Silicon NPN Power Transistor 2SD1668 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector Saturation Voltage- V = 0.4V(Max.) CE(sat) Wide Area of Safe Operation Complement to Type 2SB1135 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers,high speed inverters,c
2sd1647.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1647 DESCRIPTION Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 1A CE(sat) C High DC Current Gain h = 1000(Min) @I = 1.0A FE C Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for ge
2sd1692.pdf
isc Silicon NPN Darlington Power Transistor 2SD1692 DESCRIPTION Collector Emitter Sustaining Voltage V = 100V(min.) CEO(SUS) DC Current Gain h = 2000(Min.) @ I = 1.5 A FE C Complement to Type 2SB1149 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier applications. ABSOLUTE MAXI
2sd1652.pdf
isc Silicon NPN Power Transistor 2SD1652 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal deflection output applicaitions ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
2sd1656.pdf
isc Silicon NPN Power Transistor 2SD1656 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag
2sd1609.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1609 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO Good Linearity of h FE 100% avalanche tested Complement to Type 2SB1109 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency and high-voltage amplifier applica
2sd1605.pdf
isc Silicon NPN Darlington Power Transistor 2SD1605 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 1.5A FE C Complement to Type 2SB1105 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM
2sd1655.pdf
isc Silicon NPN Power Transistor 2SD1655 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag
2sd1603.pdf
isc Silicon NPN Darlington Power Transistor 2SD1603 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 4A FE C Complement to Type 2SB1103 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RA
2sd1600.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1600 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 4A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) Low Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 4A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
Другие транзисторы: 2SD1592, 2SD1593, 2SD1594, 2SD1595, 2SD1597, 2SD1598, 2SD1599, 2SD159F, 13003, 2SD160, 2SD1600, 2SD1601, 2SD1602, 2SD1603, 2SD1604, 2SD1605, 2SD1606
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