2SD1611 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Power Transistors 2SD1611 Silicon NPN triple diffusion planar type Darlington Unit mm 8.5 0.2 3.4 0.3 For power amplification 6.0 0.5 1.0 0.1 Features 1.5max. 1.1max. High foward current transfer ratio hFE High collector to base voltage VCBO 0.8 0.1 0.5max. N type package enabling direct soldering of the radiating fin to 2.54 0.3 the printed circuit board, etc. of sma

Ordering number 1784B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1118/2SD1618 Low-Voltage High-Current Amplifier, Muting Applications Features Package Dimensions Low collector-to-emitter saturation voltage. unit mm Very small size making it easy to provide high- 2038 density, small-sized hybrid IC s. [2SB1118/2SD1618] E Emitter C Collector B Base ( ) 2SB111

Ordering number 1785A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1119/2SD1619 LF Amplifier, Electronic Governor Applications Features Package Dimensions Very small size making it easy to provide high- unit mm density, small-sized hybrid IC s. 2038 [2SB1119/2SD1619] E Emitter C Collector B Base ( ) 2SB1119 SANYO PCP (Bottom view) Specifications Absolute Maxi

DATA SHEET SILICON TRANSISTORS 2SD1616, 2SD1616A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT mm) Low VCE(sat) VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA) Large PT in small dimension with versatility PT = 0.75 W, VCEO = 50/60 V, IC(DC) = 1.0 A Complementary transistor with the 2SB1116 and 1

DATA SHEET SILICON TRANSISTORS 2SD1615, 2SD1615A NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS World Standard Miniature Package in millimeters Low VCE (sat) VCE(sat) = 0.15 V Complement to 2SB111

DATA SHEET SILICON TRANSISTORS 2SD1615, 2SD1615A NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS World Standard Miniature Package in millimeters Low VCE (sat) VCE(sat) = 0.15 V Complement to 2SB111

Ordering number EN1784C 2SD1618 Bipolar Transistor http //onsemi.com ( ) 15V, 0.7A, Low VCE sat , NPN Single PCP Features Low collector-to-emitter saturation voltage Very small size making it easy to provide highdensity, small-sized hybrid IC s Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V

UNISONIC TECHNOLOGIES CO., LTD 2SD1616/A NPN SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR 1 1 SOT-223 SOT-89 DESCRIPTION * Audio frequency power amplifier * Medium speed switching 1 SIP-3 1 1 TO-92 TO-92SP ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen-Free 1 2 3 2SD1616L-x-AA3-B 2SD1616G-x-AA3-B SOT-22

2SD1609, 2SD1610 Silicon NPN Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SB1109 and 2SB1110 Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Ratings Item Symbol 2SD1609 2SD1610 Unit Collector to base voltage VCBO 160 200 V Collector to emitter voltage VCEO 160 200 V Emitter to base voltage VEB

2SD1616A 1A , 120V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Power dissipation A D Millimeter REF. Min. Max. B A 4.40 4.70 CLASSIFICATION OF hFE (1) B 4.30 4.70 C 12.70 - D 3.30 3.81 Product-Rank 2SD1616A-L 2SD1616A-K 2SD1616A-U E 0.36 0.56 F 0.36 0.51

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 1. EMITTER 2SD1616A TRANSISTOR (NPN) 2. COLLECTOR FEATURE 3. BSAE Power dissipation MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Co

2SD1616A(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 1 A Dimensions in inches and (millimeters) PC C

2SD1616 2SD1616A NPN Transistors TO-92 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol 2SD16116 2SD1616A Unit Collector-Emitter Voltage V CEO 50 60 Vdc Collector-Base Voltage VCBO 60 120 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current IC 1.0 Adc PD 0.75 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C -55

SMD Type Transistors NPN Transistors 2SD1614 1.70 0.1 Features High DC Current Gain hFE 135 to 600. Low VCE(sat) Complementary to 2SB1114 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 6 C

SMD Type Transistors NPN Transistors 2SD1618 Features 1.70 0.1 Low collector-to-emitter saturation voltage. Very small size making it easy to provide highdensity, small-sized hybrid IC s. 0.42 0.1 0.46 0.1 Complementary to 2SB1118 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO

SMD Type Transistors NPN Transistors 2SD1615 1.70 0.1 Features Low VCE(sat) Complementary to 2SB1115 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 1 A Col

SMD Type Transistors NPN Transistors 2SD1615A 1.70 0.1 Features Low VCE(sat) Complementary to 2SB1115A 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 60 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 1 A

SMD Type Transistors NPN Transistors 2SD1619 1.70 0.1 Features Very small size making it easy to provide highdensity, small-sized hybrid IC s. Complementary to 2SB1119 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 25 V Emitt

2SD1614 NPN-Silicon General use Transistors 4 1W 1.5A 25V 3 Applications Can be used for switching and amplifying in various 1 2 1 2 3 electrical and electronic circuit. SOT-89 1 Base 2/4 Collector 3 Emitter Maximum ratings Parameters Symbol Rating Unit V VCEO 25 Collector-emitter voltage (IB=0) VCBO 40 V Collector-base voltage IE=0 VEBO 6 V Emitter-base

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1619 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 25V (Min) (BR)CEO Complement to Type 2SB1119 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for L Amp Electronic Governor applications. F ABSOLUTE MAXIMUM RATINGS(Ta=25 ) S