2SD1616
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1616
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.75
W
Tensión colector-base (Vcb): 60
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 8
V
Corriente del colector DC máxima (Ic): 1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100
MHz
Capacitancia de salida (Cc): 19
pF
Ganancia de corriente contínua (hfe): 135
Paquete / Cubierta:
TO92
Búsqueda de reemplazo de transistor bipolar 2SD1616
2SD1616
Datasheet (PDF)
..2. Size:282K utc
2sd1616 2sd1616a.pdf 
UNISONIC TECHNOLOGIES CO., LTD 2SD1616/A NPN SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR 11SOT-223SOT-89 DESCRIPTION * Audio frequency power amplifier * Medium speed switching 1SIP-311TO-92 TO-92SP ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen-Free 1 2 3 2SD1616L-x-AA3-B 2SD1616G-x-AA3-B SOT-22
..3. Size:1161K wietron
2sd1616.pdf
2SD16162SD1616ANPN TransistorsTO-921. EMITTER122. COLLECTOR33. BASEABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating Symbol 2SD16116 2SD1616A UnitCollector-Emitter Voltage VCEO 50 60 VdcCollector-Base Voltage VCBO60 120 VdcEmitter-Base Voltage VEBO6.0 VdcCollector Current IC1.0 AdcPD 0.75Total Device Dissipation T =25 C WAJunction Temperature T 150j C-55
0.1. Size:98K nec
2sd1616a.pdf
DATA SHEETSILICON TRANSISTORS2SD1616, 2SD1616ANPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) Low VCE(sat):VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA) Large PT in small dimension with versatilityPT = 0.75 W, VCEO = 50/60 V, IC(DC) = 1.0 A Complementary transistor with the 2SB1116 and 1
0.2. Size:341K secos
2sd1616a.pdf
2SD1616A 1A , 120V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Power dissipation ADMillimeter REF.Min. Max.BA 4.40 4.70CLASSIFICATION OF hFE (1) B 4.30 4.70C 12.70 -D 3.30 3.81Product-Rank 2SD1616A-L 2SD1616A-K 2SD1616A-UE 0.36 0.56F 0.36 0.51
0.3. Size:758K jiangsu
2sd1616a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 1. EMITTER 2SD1616A TRANSISTOR (NPN) 2. COLLECTOR FEATURE 3. BSAE Power dissipation MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Co
0.4. Size:193K lge
2sd1616a.pdf
2SD1616A(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 1 A Dimensions in inches and (millimeters)PC C
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