2SD1616 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD1616
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 8 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 19 pF
Forward Current Transfer Ratio (hFE), MIN: 135
Noise Figure, dB: -
Package: TO92
2SD1616 Transistor Equivalent Substitute - Cross-Reference Search
2SD1616 Datasheet (PDF)
2sd1616 2sd1616a.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SD1616/A NPN SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR 11SOT-223SOT-89 DESCRIPTION * Audio frequency power amplifier * Medium speed switching 1SIP-311TO-92 TO-92SP ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen-Free 1 2 3 2SD1616L-x-AA3-B 2SD1616G-x-AA3-B SOT-22
2sd1616.pdf
2SD16162SD1616ANPN TransistorsTO-921. EMITTER122. COLLECTOR33. BASEABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating Symbol 2SD16116 2SD1616A UnitCollector-Emitter Voltage VCEO 50 60 VdcCollector-Base Voltage VCBO60 120 VdcEmitter-Base Voltage VEBO6.0 VdcCollector Current IC1.0 AdcPD 0.75Total Device Dissipation T =25 C WAJunction Temperature T 150j C-55
2sd1616a.pdf
DATA SHEETSILICON TRANSISTORS2SD1616, 2SD1616ANPN SILICON EPITAXIAL TRANSISTORFOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHINGFEATURES PACKAGE DRAWING (UNIT: mm) Low VCE(sat):VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA) Large PT in small dimension with versatilityPT = 0.75 W, VCEO = 50/60 V, IC(DC) = 1.0 A Complementary transistor with the 2SB1116 and 1
2sd1616a.pdf
2SD1616A 1A , 120V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Power dissipation ADMillimeter REF.Min. Max.BA 4.40 4.70CLASSIFICATION OF hFE (1) B 4.30 4.70C 12.70 -D 3.30 3.81Product-Rank 2SD1616A-L 2SD1616A-K 2SD1616A-UE 0.36 0.56F 0.36 0.51
2sd1616a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 1. EMITTER 2SD1616A TRANSISTOR (NPN) 2. COLLECTOR FEATURE 3. BSAE Power dissipation MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Co
2sd1616a.pdf
2SD1616A(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 1 A Dimensions in inches and (millimeters)PC C
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
