2SD1616AY . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DATA SHEET SILICON TRANSISTORS 2SD1616, 2SD1616A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT mm) Low VCE(sat) VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA) Large PT in small dimension with versatility PT = 0.75 W, VCEO = 50/60 V, IC(DC) = 1.0 A Complementary transistor with the 2SB1116 and 1

UNISONIC TECHNOLOGIES CO., LTD 2SD1616/A NPN SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR 1 1 SOT-223 SOT-89 DESCRIPTION * Audio frequency power amplifier * Medium speed switching 1 SIP-3 1 1 TO-92 TO-92SP ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen-Free 1 2 3 2SD1616L-x-AA3-B 2SD1616G-x-AA3-B SOT-22

2SD1616A 1A , 120V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Power dissipation A D Millimeter REF. Min. Max. B A 4.40 4.70 CLASSIFICATION OF hFE (1) B 4.30 4.70 C 12.70 - D 3.30 3.81 Product-Rank 2SD1616A-L 2SD1616A-K 2SD1616A-U E 0.36 0.56 F 0.36 0.51

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 1. EMITTER 2SD1616A TRANSISTOR (NPN) 2. COLLECTOR FEATURE 3. BSAE Power dissipation MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Co

2SD1616A(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 1 A Dimensions in inches and (millimeters) PC C