2SD1618S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Ordering number 1784B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1118/2SD1618 Low-Voltage High-Current Amplifier, Muting Applications Features Package Dimensions Low collector-to-emitter saturation voltage. unit mm Very small size making it easy to provide high- 2038 density, small-sized hybrid IC s. [2SB1118/2SD1618] E Emitter C Collector B Base ( ) 2SB111

Ordering number EN1784C 2SD1618 Bipolar Transistor http //onsemi.com ( ) 15V, 0.7A, Low VCE sat , NPN Single PCP Features Low collector-to-emitter saturation voltage Very small size making it easy to provide highdensity, small-sized hybrid IC s Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V

SMD Type Transistors NPN Transistors 2SD1618 Features 1.70 0.1 Low collector-to-emitter saturation voltage. Very small size making it easy to provide highdensity, small-sized hybrid IC s. 0.42 0.1 0.46 0.1 Complementary to 2SB1118 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO