2SD1618S Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD1618S
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 15 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.7 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 140
Noise Figure, dB: -
Package: SOT89
2SD1618S Transistor Equivalent Substitute - Cross-Reference Search
2SD1618S Datasheet (PDF)
2sd1618.pdf
Ordering number:1784BPNP/NPN Epitaxial Planar Silicon Transistors2SB1118/2SD1618Low-Voltage High-Current Amplifier,Muting ApplicationsFeatures Package Dimensions Low collector-to-emitter saturation voltage.unit:mm Very small size making it easy to provide high-2038density, small-sized hybrid ICs.[2SB1118/2SD1618]E : EmitterC : CollectorB : Base( ) : 2SB111
2sd1618.pdf
Ordering number : EN1784C2SD1618Bipolar Transistorhttp://onsemi.com( )15V, 0.7A, Low VCE sat , NPN Single PCPFeatures Low collector-to-emitter saturation voltage Very small size making it easy to provide highdensity, small-sized hybrid ICsSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 20 V
2sd1618.pdf
SMD Type TransistorsNPN Transistors2SD1618 Features 1.70 0.1 Low collector-to-emitter saturation voltage. Very small size making it easy to provide highdensity, small-sized hybrid ICs.0.42 0.10.46 0.1 Complementary to 2SB11181.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: CD9011I | 2N5851 | AC128K
