2SD1619T Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1619T 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5 W
Tensión colector-base (Vcb): 25 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 180 MHz
Capacitancia de salida (Cc): 15 pF
Ganancia de corriente contínua (hFE): 200
Encapsulados: SOT89
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2SD1619T datasheet
2sd1619.pdf
Ordering number 1785A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1119/2SD1619 LF Amplifier, Electronic Governor Applications Features Package Dimensions Very small size making it easy to provide high- unit mm density, small-sized hybrid IC s. 2038 [2SB1119/2SD1619] E Emitter C Collector B Base ( ) 2SB1119 SANYO PCP (Bottom view) Specifications Absolute Maxi
2sd1619.pdf
SMD Type Transistors NPN Transistors 2SD1619 1.70 0.1 Features Very small size making it easy to provide highdensity, small-sized hybrid IC s. Complementary to 2SB1119 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 25 V Emitt
2sd1619.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1619 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 25V (Min) (BR)CEO Complement to Type 2SB1119 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for L Amp Electronic Governor applications. F ABSOLUTE MAXIMUM RATINGS(Ta=25 ) S
Otros transistores... 2SD1617, 2SD1618, 2SD1618E, 2SD1618S, 2SD1618U, 2SD1619, 2SD1619R, 2SD1619S, 2SD669A, 2SD1619U, 2SD162, 2SD1620, 2SD1621, 2SD1621R, 2SD1621S, 2SD1621T, 2SD1621U
History: 2N197 | CHT5551WGP | MMBT4403LT1G | DDC142TU
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