2SD1619T Datasheet. Specs and Replacement
Type Designator: 2SD1619T 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 180 MHz
Collector Capacitance (Cc): 15 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Package: SOT89
2SD1619T Substitution
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2SD1619T datasheet
Ordering number 1785A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1119/2SD1619 LF Amplifier, Electronic Governor Applications Features Package Dimensions Very small size making it easy to provide high- unit mm density, small-sized hybrid IC s. 2038 [2SB1119/2SD1619] E Emitter C Collector B Base ( ) 2SB1119 SANYO PCP (Bottom view) Specifications Absolute Maxi... See More ⇒
SMD Type Transistors NPN Transistors 2SD1619 1.70 0.1 Features Very small size making it easy to provide highdensity, small-sized hybrid IC s. Complementary to 2SB1119 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 25 V Emitt... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1619 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 25V (Min) (BR)CEO Complement to Type 2SB1119 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for L Amp Electronic Governor applications. F ABSOLUTE MAXIMUM RATINGS(Ta=25 ) S... See More ⇒
Detailed specifications: 2SD1617, 2SD1618, 2SD1618E, 2SD1618S, 2SD1618U, 2SD1619, 2SD1619R, 2SD1619S, 2SD669A, 2SD1619U, 2SD162, 2SD1620, 2SD1621, 2SD1621R, 2SD1621S, 2SD1621T, 2SD1621U
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