2SD1641 Todos los transistores

 ..1. Size:107K  panasonic
 2sd1641.pdf

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 8.1. Size:762K  sanyo
 2sd1649.pdf

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 8.2. Size:48K  rohm
 2sd1646.pdf

 8.3. Size:52K  rohm
 2sd1647.pdf

 8.4. Size:104K  panasonic
 2sd1645.pdf

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 8.5. Size:153K  panasonic
 2sd1640.pdf

 8.6. Size:209K  inchange semiconductor
 2sd1646.pdf

isc Silicon NPN Darlington Power Transistor 2SD1646 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min.) (BR)CEO High DC Current Gain h = 1000(Min) @I = 1A FE C Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAX

 8.7. Size:215K  inchange semiconductor
 2sd1649.pdf

isc Silicon NPN Power Transistor 2SD1649 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal deflection output applicaitions. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM

 8.8. Size:205K  inchange semiconductor
 2sd1640.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1640 DESCRIPTION High DC Current Gain- h = 4000(Min)@ I = 1A FE C Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 1A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS D

 8.9. Size:203K  inchange semiconductor
 2sd1647.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1647 DESCRIPTION Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 1A CE(sat) C High DC Current Gain h = 1000(Min) @I = 1.0A FE C Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for ge