All Transistors. 2SD1641 Datasheet

 

2SD1641 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD1641
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Base Voltage |Vcb|: 55 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO218

 2SD1641 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD1641 Datasheet (PDF)

 ..1. Size:107K  panasonic
2sd1641.pdf

2SD1641
2SD1641

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.1. Size:762K  sanyo
2sd1649.pdf

2SD1641
2SD1641

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Res

 8.2. Size:48K  rohm
2sd1646.pdf

2SD1641

 8.3. Size:52K  rohm
2sd1647.pdf

2SD1641

 8.4. Size:104K  panasonic
2sd1645.pdf

2SD1641
2SD1641

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.5. Size:153K  panasonic
2sd1640.pdf

2SD1641
2SD1641

 8.6. Size:209K  inchange semiconductor
2sd1646.pdf

2SD1641
2SD1641

isc Silicon NPN Darlington Power Transistor 2SD1646DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 1AFE CLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAX

 8.7. Size:215K  inchange semiconductor
2sd1649.pdf

2SD1641
2SD1641

isc Silicon NPN Power Transistor 2SD1649DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal deflection outputapplicaitions.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

 8.8. Size:205K  inchange semiconductor
2sd1640.pdf

2SD1641
2SD1641

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1640DESCRIPTIONHigh DC Current Gain-: h = 4000(Min)@ I = 1AFE CCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 1ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSD

 8.9. Size:203K  inchange semiconductor
2sd1647.pdf

2SD1641
2SD1641

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1647DESCRIPTIONLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 1ACE(sat) CHigh DC Current Gain: h = 1000(Min) @I = 1.0AFE CLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for ge

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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