2SD1643 Todos los transistores

 

2SD1643 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1643

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 80 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 1000

Empaquetado / Estuche: TO126

Búsqueda de reemplazo de transistor bipolar 2SD1643

 

2SD1643 Datasheet (PDF)

8.1. 2sd1649.pdf Size:762K _sanyo

2SD1643
2SD1643

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Res

8.2. 2sd1646.pdf Size:48K _rohm

2SD1643

 8.3. 2sd1647.pdf Size:52K _rohm

2SD1643

8.4. 2sd1640.pdf Size:153K _panasonic

2SD1643
2SD1643

 8.5. 2sd1641.pdf Size:107K _panasonic

2SD1643
2SD1643

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

8.6. 2sd1645.pdf Size:104K _panasonic

2SD1643
2SD1643

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

8.7. 2sd1640.pdf Size:205K _inchange_semiconductor

2SD1643
2SD1643

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1640DESCRIPTIONHigh DC Current Gain-: h = 4000(Min)@ I = 1AFE CCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 1ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSD

8.8. 2sd1649.pdf Size:215K _inchange_semiconductor

2SD1643
2SD1643

isc Silicon NPN Power Transistor 2SD1649DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal deflection outputapplicaitions.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

8.9. 2sd1646.pdf Size:209K _inchange_semiconductor

2SD1643
2SD1643

isc Silicon NPN Darlington Power Transistor 2SD1646DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 1AFE CLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAX

8.10. 2sd1647.pdf Size:203K _inchange_semiconductor

2SD1643
2SD1643

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1647DESCRIPTIONLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 1ACE(sat) CHigh DC Current Gain: h = 1000(Min) @I = 1.0AFE CLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for ge

Otros transistores... 2SC619 , 2SC62 , 2SC620 , 2SC620M , 2SC621 , 2SC621A , 2SC621M , 2SC622 , 2N5401 , 2SC623 , 2SC624 , 2SC626 , 2SC627 , 2SC627F , 2SC628 , 2SC629 , 2SC63 .

 

 
Back to Top

 


2SD1643
  2SD1643
  2SD1643
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: 3DD5E | CD551B | YTS2907A | YTS2906A | YTS2907 | YTS2906 | YTS4403 | YTS4402 | YTS4126 | YTS4125 | YTS3906 | YTS3905 | YTS2222A | YTS2221A | YTS2222 | YTS2221 | YTS4401 | YTS4400 | YTS4124 | YTS4123 | YTS3904

 

 

 
Back to Top