2SD1680 Todos los transistores

 

2SD1680 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1680

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 70 W

Tensión colector-base (Vcb): 330 V

Tensión colector-emisor (Vce): 200 V

Corriente del colector DC máxima (Ic): 7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 60

Empaquetado / Estuche: TO126

Búsqueda de reemplazo de transistor bipolar 2SD1680

 

2SD1680 Datasheet (PDF)

0.1. 2sd1680.pdf Size:208K _inchange_semiconductor

2SD1680
2SD1680

isc Silicon NPN Power Transistor 2SD1680DESCRIPTIONCollector-Base Breakdown Voltage-: V = 330V(Min)(BR)CBOHigh Power DissipationHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

8.1. 2sd1681.pdf Size:133K _sanyo

2SD1680
2SD1680

Ordering number:2020APNP/NPN Epitaxial Planar Silicon Transistors2SB1141/2SD168118V/1.2A Switching ApplicationsApplications Package Dimensions Converters, relay drivers, low-voltage and highunit:mmpower AF Amplifier.2042A[2SB1141/2SD1681]Features Low saturation voltage and excellent linearity of hFE. Wide ASO.B : BaseC : CollectorE : Emitter( ) : 2SB1141

8.2. 2sd1684.pdf Size:146K _sanyo

2SD1680
2SD1680

Ordering number:2041APNP/NPN Epitaxial Planar Silicon Transistors2SB1144/2SD1684100V/1.5A Switching ApplicationsFeatures Package Dimensions Adoption of FBET and MBIT processes.unit:mm High breakdown voltage.2042B Low saturation voltage.[2SB1144/2SD1684] Plastic-covered heat sink facilitating high-densitymounting.1 : Emitter2 : Collector3 : Base( ) : 2

 8.3. 2sd1683.pdf Size:146K _sanyo

2SD1680
2SD1680

Ordering number:2063APNP/NPN Epitaxial Planar Silicon Transistors2SB1143/2SD168350V/4A Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2042A[2SB1143/2SD1683]Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO.B : BaseC : C

8.4. 2sd1685.pdf Size:113K _sanyo

2SD1680
2SD1680

Ordering number:EN2042ANPN Epitaxial Planar Silicon Transistor2SD168520V/5A Switching ApplicationsApplications Package Dimensions Strobe, voltage regulators, relay drivers, lampunit:mmdrivers.2042B[2SD1685]8.0Features4.03.31.0 1.0 Low saturation voltage. Large current capacity.3.0 Fast switching time. No insulator required when mounting becau

 8.5. 2sd1682.pdf Size:149K _sanyo

2SD1680
2SD1680

Ordering number:2060APNP/NPN Epitaxial Planar Silicon Transistors2SB1142/2SD168250V/2.5A High-Speed Switching ApplicationsApplications Package Dimensions Power supplies, relay drivers, lamp drivers. unit:mm2042AFeatures [2SB1142/2SD1682] Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO.B : BaseC : Collector( ) :

8.6. 2sb1143 2sd1683.pdf Size:60K _sanyo

2SD1680
2SD1680

Ordering number:ENN2063APNP/NPN Epitaxial Planar Silicon Transistors2SB1143/2SD168350V/4A Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers,unit:mmelectrical equipment.2042B[2SB1143/2SD1683]Features8.04.03.3 Adoption of FBET, MBIT processes. 1.0 1.0 Low saturation voltage. Large current capacity and

8.7. 2sd1684.pdf Size:212K _inchange_semiconductor

2SD1680
2SD1680

isc Silicon NPN Power Transistor 2SD1684DESCRIPTION Collector Saturation VoltageLow: V = -0.5V(Max)@I = -0.5ACE(sat) CWide Area of Safe OperationComplement to Type 2SB1144Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for 100V/1.5A Switching ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

8.8. 2sd1683.pdf Size:213K _inchange_semiconductor

2SD1680
2SD1680

isc Silicon NPN Power Transistor 2SD1683DESCRIPTIONHigh Collector Current-I = 4ACLow Saturation Voltage -: V = 0.5V(Max)@ I = 2ACE(sat) CComplement to Type 2SB1143Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in voltage regulations, relay drivers, lampdrivers and electrical equipment.ABSOLUTE MAX

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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