2SD1680 Todos los transistores

 

2SD1680 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1680

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 70 W

Tensión colector-base (Vcb): 330 V

Tensión colector-emisor (Vce): 200 V

Corriente del colector DC máxima (Ic): 7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 60

Encapsulados: TO126

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2SD1680 datasheet

 ..1. Size:208K  inchange semiconductor
2sd1680.pdf pdf_icon

2SD1680

isc Silicon NPN Power Transistor 2SD1680 DESCRIPTION Collector-Base Breakdown Voltage- V = 330V(Min) (BR)CBO High Power Dissipation High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

 8.1. Size:146K  sanyo
2sd1683.pdf pdf_icon

2SD1680

Ordering number 2063A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1143/2SD1683 50V/4A Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2042A [2SB1143/2SD1683] Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO. B Base C C

 8.2. Size:60K  sanyo
2sb1143 2sd1683.pdf pdf_icon

2SD1680

Ordering number ENN2063A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1143/2SD1683 50V/4A Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2042B [2SB1143/2SD1683] Features 8.0 4.0 3.3 Adoption of FBET, MBIT processes. 1.0 1.0 Low saturation voltage. Large current capacity and

 8.3. Size:146K  sanyo
2sd1684.pdf pdf_icon

2SD1680

Ordering number 2041A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1144/2SD1684 100V/1.5A Switching Applications Features Package Dimensions Adoption of FBET and MBIT processes. unit mm High breakdown voltage. 2042B Low saturation voltage. [2SB1144/2SD1684] Plastic-covered heat sink facilitating high-density mounting. 1 Emitter 2 Collector 3 Base ( ) 2

Otros transistores... 2SD1671 , 2SD1672 , 2SD1673 , 2SD1676 , 2SD1677 , 2SD1678 , 2SD1679 , 2SD168 , NJW0281G , 2SD1681 , 2SD1681Q , 2SD1681R , 2SD1681S , 2SD1681T , 2SD1682 , 2SD1682R , 2SD1682S .

 

 

 


 
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