2SD1819 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Transistor2SD1819ASilicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB1218A2.1 0.10.425 1.25 0.1 0.425FeaturesHigh foward current transfer ratio hFE.1Low collector to emitter saturation voltage VCE(sat).S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2

Transistor2SD1819ASilicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB1218A2.1 0.10.425 1.25 0.1 0.425FeaturesHigh foward current transfer ratio hFE.1Low collector to emitter saturation voltage VCE(sat).S-Mini type package, allowing downsizing of the equipment and3automatic insertion through the tape packing and the magazine2

2SD1819A 0.1A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente 24RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURES High DC Current Gain. Low collector to emitter saturation voltage VCE(sat). AL Complementary to 2SB1218A 33 Top View C B11 22APPLICATION K E General purpose amplification. DH

SMD Type TransistorsNPN Transistors2SD1819A Features Low Collector-to-Emitter Saturation Voltage High foward current transfer ratio hFE. Complementary to 2SB1218A1 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO