2SD1819 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Transistor 2SD1819A Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB1218A 2.1 0.1 0.425 1.25 0.1 0.425 Features High foward current transfer ratio hFE. 1 Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2

Transistor 2SD1819A Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB1218A 2.1 0.1 0.425 1.25 0.1 0.425 Features High foward current transfer ratio hFE. 1 Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2

2SD1819A 0.1A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente 24 RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURES High DC Current Gain. Low collector to emitter saturation voltage VCE(sat). A L Complementary to 2SB1218A 3 3 Top View C B 1 1 2 2 APPLICATION K E General purpose amplification. D H

SMD Type Transistors NPN Transistors 2SD1819A Features Low Collector-to-Emitter Saturation Voltage High foward current transfer ratio hFE. Complementary to 2SB1218A 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO