2SD1819 - Даташиты. Аналоги. Основные параметры

Transistor 2SD1819A Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB1218A 2.1 0.1 0.425 1.25 0.1 0.425 Features High foward current transfer ratio hFE. 1 Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2

Transistor 2SD1819A Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB1218A 2.1 0.1 0.425 1.25 0.1 0.425 Features High foward current transfer ratio hFE. 1 Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine 2

2SD1819A 0.1A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente 24 RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323 FEATURES High DC Current Gain. Low collector to emitter saturation voltage VCE(sat). A L Complementary to 2SB1218A 3 3 Top View C B 1 1 2 2 APPLICATION K E General purpose amplification. D H

SMD Type Transistors NPN Transistors 2SD1819A Features Low Collector-to-Emitter Saturation Voltage High foward current transfer ratio hFE. Complementary to 2SB1218A 1 Base 2 Emitter 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO