2SD1848 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon NPN Power Transistor 2SD1848 DESCRIPTION Collector-Base Breakdown Voltage- V = 1300V (Min.) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

Ordering number EN3260A 2SB1231 PNP Epitaxial Planar Silicon Transistor 2SD1841 NPN Triple Diffused Planar Silicon Transistor 2SB1231/2SD1841 100V/25A Switching Applications Applications Package Dimensions Motor drivers, relay drivers, converters, and other unit mm general high-current switching applications. 2022A [2SB1231/2SD1841] Features Large current capacity and wi

Ordering number EN3261A 2SB1232 PNP Epitaxial Planar Silicon Transistor 2SD1842 NPN Triple Diffused Planar Silicon Transistor 2SB1232/2SD1842 100V/40A Switching Applications Applications Package Dimensions Motor drivers, relay drivers, converters, and other unit mm general high-current switching applications. 2022A [2SB1232/2SD1842] Features Large current capacity and wi

Ordering number EN3259 2SB1230 PNP Epitaxial Planar Silicon Transistor 2SD1840 NPN Triple Diffused Planar Silicon Transistor 2SB1230/2SD1840 100V/4A Switching Applications Applications Package Dimensions Motor drivers, relay drivers, converters and other unit mm general high-current switching applications. 2022A [2SB1230/2SD1840] Features Large current capacity and wide

DATA SHEET DARLINGTON POWER TRANSISTOR 2SD1843 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD1843 is a Darlington connection transistor with on-chip PACKAGE DRAWING (UNIT mm) dumper diode in collector to emitter and zener diode in collector to base. This transistor is ideal for use in acuator drives such as mo

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isc Silicon NPN Power Transistor 2SD1846 DESCRIPTION Collector-Base Breakdown Voltage- V = 1300V (Min.) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

isc Silicon NPN Power Transistor 2SD1841 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High Current Capability Wide Area of Safe Operation Complement to Type 2SB1231 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers, relay drivers, converters and other general high-current

isc Silicon NPN Power Transistor 2SD1845 DESCRIPTION Collector-Base Breakdown Voltage- V = 1300V (Min.) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

isc Silicon NPN Power Transistor 2SD1849 DESCRIPTION Collector-Base Breakdown Voltage- V = 1300V (Min.) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

isc Silicon NPN Power Transistor 2SD1840 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High Current Capability Wide Area of Safe Operation Complement to Type 2SB1230 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers, converters and other general high-current switching appl

isc Silicon NPN Power Transistor 2SD1847 DESCRIPTION Collector-Base Breakdown Voltage- V = 1300V (Min.) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V