2SD1848 datasheet и подбор замены

 ..1. Size:211K  inchange semiconductor
 2sd1848.pdf 

isc Silicon NPN Power Transistor 2SD1848 DESCRIPTION Collector-Base Breakdown Voltage- V = 1300V (Min.) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

 8.1. Size:136K  sanyo
 2sd1841.pdf 

Ordering number EN3260A 2SB1231 PNP Epitaxial Planar Silicon Transistor 2SD1841 NPN Triple Diffused Planar Silicon Transistor 2SB1231/2SD1841 100V/25A Switching Applications Applications Package Dimensions Motor drivers, relay drivers, converters, and other unit mm general high-current switching applications. 2022A [2SB1231/2SD1841] Features Large current capacity and wi

 8.2. Size:125K  sanyo
 2sd1842.pdf 

Ordering number EN3261A 2SB1232 PNP Epitaxial Planar Silicon Transistor 2SD1842 NPN Triple Diffused Planar Silicon Transistor 2SB1232/2SD1842 100V/40A Switching Applications Applications Package Dimensions Motor drivers, relay drivers, converters, and other unit mm general high-current switching applications. 2022A [2SB1232/2SD1842] Features Large current capacity and wi

 8.3. Size:136K  sanyo
 2sd1840.pdf 

Ordering number EN3259 2SB1230 PNP Epitaxial Planar Silicon Transistor 2SD1840 NPN Triple Diffused Planar Silicon Transistor 2SB1230/2SD1840 100V/4A Switching Applications Applications Package Dimensions Motor drivers, relay drivers, converters and other unit mm general high-current switching applications. 2022A [2SB1230/2SD1840] Features Large current capacity and wide

 8.4. Size:76K  nec
 2sd1843.pdf 

DATA SHEET DARLINGTON POWER TRANSISTOR 2SD1843 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD1843 is a Darlington connection transistor with on-chip PACKAGE DRAWING (UNIT mm) dumper diode in collector to emitter and zener diode in collector to base. This transistor is ideal for use in acuator drives such as mo

 8.5. Size:105K  panasonic
 2sd1846.pdf 

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.6. Size:143K  panasonic
 2sd1849.pdf 

 8.7. Size:212K  inchange semiconductor
 2sd1846.pdf 

isc Silicon NPN Power Transistor 2SD1846 DESCRIPTION Collector-Base Breakdown Voltage- V = 1300V (Min.) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

 8.8. Size:217K  inchange semiconductor
 2sd1841.pdf 

isc Silicon NPN Power Transistor 2SD1841 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High Current Capability Wide Area of Safe Operation Complement to Type 2SB1231 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers, relay drivers, converters and other general high-current

 8.9. Size:211K  inchange semiconductor
 2sd1845.pdf 

isc Silicon NPN Power Transistor 2SD1845 DESCRIPTION Collector-Base Breakdown Voltage- V = 1300V (Min.) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

 8.10. Size:212K  inchange semiconductor
 2sd1849.pdf 

isc Silicon NPN Power Transistor 2SD1849 DESCRIPTION Collector-Base Breakdown Voltage- V = 1300V (Min.) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V

 8.11. Size:217K  inchange semiconductor
 2sd1840.pdf 

isc Silicon NPN Power Transistor 2SD1840 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High Current Capability Wide Area of Safe Operation Complement to Type 2SB1230 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for motor drivers, converters and other general high-current switching appl

 8.12. Size:211K  inchange semiconductor
 2sd1847.pdf 

isc Silicon NPN Power Transistor 2SD1847 DESCRIPTION Collector-Base Breakdown Voltage- V = 1300V (Min.) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V