2SD186 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SD186
   Material: Ge
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 25 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 12 V
   Corriente del colector DC máxima (Ic): 0.15 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 0.5 MHz
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: TO1

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2SD186 Datasheet (PDF)

..1. Size:25K no
2sd186.pdf pdf_icon

0.1. Size:189K 1
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0.5. Size:48K 1
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0.6. Size:66K rohm
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2SD2195 / 2SD1980 / 2SD1867 / 2SD2398TransistorsPower Transistor (100V , 2A)2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Features External dimensions (Units : mm)1) Darlington connection for high DC current gain.2SD21954.02) Built-in resistor between base and emitter.1.0 2.5 0.53) Built-in damper diode.(1)(2)4) Complements the 2SB1580 / 2SB1316 / 2SB1567.(3)(1) Base(Gate)

0.7. Size:78K rohm
2sd1760 2sd1864.pdf pdf_icon

2SD1760 / 2SD1864TransistorsPower Transistor (50V, 3A)2SD1760 / 2SD1864 External dimensions (Units : mm) Features1) Low VCE(sat).2SD1760 2SD1864 VCE(sat) = 0.5V (Typ.)2.50.26.80.22.3 +0.26.50.2 -0.1 (IC/IB = 2A / 0.2A) C0.55.1 +0.2 0.50.1 -0.12) Complements the 2SB1184 / 2SB1243.0.65Max.0.650.10.750.90.50.10.550.1 Structure2.30.2

0.8. Size:170K rohm
2sd1766 2sd1758 2sd1862.pdf pdf_icon

Medium power transistor (32V, 2A) 2SD1766 / 2SD1758 / 2SD1862 Features Dimensions (Unit : mm) 1) Low VCE(sat). 2SD1766 2SD1758VCE(sat) = 0.5V (Typ.) 4.5+0.2-0.1(IC/IB = 2A / 0.2A) 2.3+0.26.50.2-0.11.5+0.2C0.51.60.1 -0.15.1+0.2-0.1 0.50.12) Complements the 2SB1188 / 2SB1182 / 2SB1240 (1) (2) (3)0.650.10.75Structure 0.4+0.1-0.050.90.4

0.9. Size:87K rohm
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2SD2212 / 2SD2143 / 2SD1866 Transistors Medium Power Transistor (Motor, Relay drive) (6010V, 2A) 2SD2212 / 2SD2143 / 2SD1866 External dimensions (Unit : mm) Features 1) Built-in zener diode between collector and base. 2SD22124.02) Strong protection against reverse surges due to "L" 1.0 2.5 0.5 loads. (1)(2)3) Built-in resistor between base and emitter. (3)4)

0.10. Size:114K rohm
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Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Features Dimensions (Unit : mm) 1) High VCEO, VCEO=80V 2SD18982) High IC, IC=1A (DC) 4.5+0.2-0.11.50.13) Good hFE linearity 1.60.14) Low VCE (sat) 5) Complements the 2SB1260 / (1) (2) (3) 2SB1241 / 2SB1181 0.4+0.1-0.050.40.1 0.50.1 0.40.11.50.1 1.50.13.00.2(1) BaseRO

0.11. Size:67K rohm
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0.12. Size:151K rohm
2sd1758 2sd1862.pdf pdf_icon

Medium power transistor (32V, 2A) 2SD1758 / 2SD1862 Features Dimensions (Units : mm) 1) Low VCE(sat). 2SD1758 2SD1862VCE(sat) = 0.5V (Typ.) 2.50.22.3+0.2 6.80.26.50.2-0.1(IC/IB = 2A / 0.2A) C0.55.1+0.2-0.1 0.50.12) Complements the 2SB1182 / 2SB1240 0.650.10.750.65Max.Structure 0.90.550.1Epitaxial planar type NPN silicon transistor

0.13. Size:71K rohm
2sd1866 2sd2212 2sd2212 2sd2143 2sd1866 2sd2397.pdf pdf_icon

2SD2212 / 2SD2143 / 2SD1866 / 2SD2397TransistorsMedium Power Transistor(Motor, Relay drive) (6010V, 2A)2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Features External dimensions (Units : mm)1) Built-in zener diode between collector and base.2) Strong protection against reverse surges due to "L"4.02SD22121.0 2.5 0.5loads.(1)3) Built-in resistor between base and emitter.(2)

0.14. Size:30K hitachi
2sd1868 2sd1869.pdf pdf_icon

2SD1868, 2SD1869Silicon NPN EpitaxialApplicationLow frequency high voltage amplifierOutlineTO-92MOD1. Emitter2. Collector3. Base3212SD1868, 2SD1869Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SA1868 2SA1869 UnitCollector to base voltage VCBO 160 200 VCollector to emitter voltage VCEO 160 200 VEmitter to base voltage VEBO 55VCollector current IC 100 100

Otros transistores... 2SD1852 , 2SD1853 , 2SD1854 , 2SD1855 , 2SD1856 , 2SD1857 , 2SD1858 , 2SD1859 , D209L , 2SD1860 , 2SD1861 , 2SD1862 , 2SD1863 , 2SD1864 , 2SD1865 , 2SD1866 , 2SD1867 .