Биполярный транзистор 2SD186 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD186
Тип материала: Ge
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 25 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 12 V
Макcимальный постоянный ток коллектора (Ic): 0.15 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 0.5 MHz
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора: TO1
2SD186 Datasheet (PDF)
2sd2195 2sd1980 2sd1867 2sd2398.pdf
2SD2195 / 2SD1980 / 2SD1867 / 2SD2398TransistorsPower Transistor (100V , 2A)2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Features External dimensions (Units : mm)1) Darlington connection for high DC current gain.2SD21954.02) Built-in resistor between base and emitter.1.0 2.5 0.53) Built-in damper diode.(1)(2)4) Complements the 2SB1580 / 2SB1316 / 2SB1567.(3)(1) Base(Gate)
2sd1760 2sd1864.pdf
2SD1760 / 2SD1864TransistorsPower Transistor (50V, 3A)2SD1760 / 2SD1864 External dimensions (Units : mm) Features1) Low VCE(sat).2SD1760 2SD1864 VCE(sat) = 0.5V (Typ.)2.50.26.80.22.3 +0.26.50.2 -0.1 (IC/IB = 2A / 0.2A) C0.55.1 +0.2 0.50.1 -0.12) Complements the 2SB1184 / 2SB1243.0.65Max.0.650.10.750.90.50.10.550.1 Structure2.30.2
2sd1766 2sd1758 2sd1862.pdf
Medium power transistor (32V, 2A) 2SD1766 / 2SD1758 / 2SD1862 Features Dimensions (Unit : mm) 1) Low VCE(sat). 2SD1766 2SD1758VCE(sat) = 0.5V (Typ.) 4.5+0.2-0.1(IC/IB = 2A / 0.2A) 2.3+0.26.50.2-0.11.5+0.2C0.51.60.1 -0.15.1+0.2-0.1 0.50.12) Complements the 2SB1188 / 2SB1182 / 2SB1240 (1) (2) (3)0.650.10.75Structure 0.4+0.1-0.050.90.4
2sd2212 2sd2143 2sd1866.pdf
2SD2212 / 2SD2143 / 2SD1866 Transistors Medium Power Transistor (Motor, Relay drive) (6010V, 2A) 2SD2212 / 2SD2143 / 2SD1866 External dimensions (Unit : mm) Features 1) Built-in zener diode between collector and base. 2SD22124.02) Strong protection against reverse surges due to "L" 1.0 2.5 0.5 loads. (1)(2)3) Built-in resistor between base and emitter. (3)4)
2sd1898 2sd1733 2sd1768s 2sd1863.pdf
Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Features Dimensions (Unit : mm) 1) High VCEO, VCEO=80V 2SD18982) High IC, IC=1A (DC) 4.5+0.2-0.11.50.13) Good hFE linearity 1.60.14) Low VCE (sat) 5) Complements the 2SB1260 / (1) (2) (3) 2SB1241 / 2SB1181 0.4+0.1-0.050.40.1 0.50.1 0.40.11.50.1 1.50.13.00.2(1) BaseRO
2sd1867 2sd2195.pdf
2SD2195 / 2SD1980 / 2SD1867 / 2SD2398TransistorsPower Transistor (100V , 2A)2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Features External dimensions (Units : mm)1) Darlington connection for high DC current gain.2SD21954.02) Built-in resistor between base and emitter.1.0 2.5 0.53) Built-in damper diode.(1)(2)4) Complements the 2SB1580 / 2SB1316 / 2SB1567.(3)(1) Base(Gate)
2sd1758 2sd1862.pdf
Medium power transistor (32V, 2A) 2SD1758 / 2SD1862 Features Dimensions (Units : mm) 1) Low VCE(sat). 2SD1758 2SD1862VCE(sat) = 0.5V (Typ.) 2.50.22.3+0.2 6.80.26.50.2-0.1(IC/IB = 2A / 0.2A) C0.55.1+0.2-0.1 0.50.12) Complements the 2SB1182 / 2SB1240 0.650.10.750.65Max.Structure 0.90.550.1Epitaxial planar type NPN silicon transistor
2sd1866 2sd2212 2sd2212 2sd2143 2sd1866 2sd2397.pdf
2SD2212 / 2SD2143 / 2SD1866 / 2SD2397TransistorsMedium Power Transistor(Motor, Relay drive) (6010V, 2A)2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Features External dimensions (Units : mm)1) Built-in zener diode between collector and base.2) Strong protection against reverse surges due to "L"4.02SD22121.0 2.5 0.5loads.(1)3) Built-in resistor between base and emitter.(2)
2sd1868 2sd1869.pdf
2SD1868, 2SD1869Silicon NPN EpitaxialApplicationLow frequency high voltage amplifierOutlineTO-92MOD1. Emitter2. Collector3. Base3212SD1868, 2SD1869Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SA1868 2SA1869 UnitCollector to base voltage VCBO 160 200 VCollector to emitter voltage VCEO 160 200 VEmitter to base voltage VEBO 55VCollector current IC 100 100
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BD505-5
History: BD505-5
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050