2SD1866 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SD2212 / 2SD2143 / 2SD1866 Transistors Medium Power Transistor (Motor, Relay drive) (60 10V, 2A) 2SD2212 / 2SD2143 / 2SD1866 External dimensions (Unit mm) Features 1) Built-in zener diode between collector and base. 2SD2212 4.0 2) Strong protection against reverse surges due to "L" 1.0 2.5 0.5 loads. (1) (2) 3) Built-in resistor between base and emitter. (3) 4)

2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Transistors Medium Power Transistor (Motor, Relay drive) (60 10V, 2A) 2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Features External dimensions (Units mm) 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L" 4.0 2SD2212 1.0 2.5 0.5 loads. (1) 3) Built-in resistor between base and emitter. (2)

2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Transistors Power Transistor (100V , 2A) 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Features External dimensions (Units mm) 1) Darlington connection for high DC current gain. 2SD2195 4.0 2) Built-in resistor between base and emitter. 1.0 2.5 0.5 3) Built-in damper diode. (1) (2) 4) Complements the 2SB1580 / 2SB1316 / 2SB1567. (3) (1) Base(Gate)

2SD1760 / 2SD1864 Transistors Power Transistor (50V, 3A) 2SD1760 / 2SD1864 External dimensions (Units mm) Features 1) Low VCE(sat). 2SD1760 2SD1864 VCE(sat) = 0.5V (Typ.) 2.5 0.2 6.8 0.2 2.3 +0.2 6.5 0.2 -0.1 (IC/IB = 2A / 0.2A) C0.5 5.1 +0.2 0.5 0.1 -0.1 2) Complements the 2SB1184 / 2SB1243. 0.65Max. 0.65 0.1 0.75 0.9 0.5 0.1 0.55 0.1 Structure 2.3 0.2

Medium power transistor (32V, 2A) 2SD1766 / 2SD1758 / 2SD1862 Features Dimensions (Unit mm) 1) Low VCE(sat). 2SD1766 2SD1758 VCE(sat) = 0.5V (Typ.) 4.5+0.2 -0.1 (IC/IB = 2A / 0.2A) 2.3+0.2 6.5 0.2 -0.1 1.5+0.2 C0.5 1.6 0.1 -0.1 5.1+0.2 -0.1 0.5 0.1 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 (1) (2) (3) 0.65 0.1 0.75 Structure 0.4+0.1 -0.05 0.9 0.4

Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Features Dimensions (Unit mm) 1) High VCEO, VCEO=80V 2SD1898 2) High IC, IC=1A (DC) 4.5+0.2 -0.1 1.5 0.1 3) Good hFE linearity 1.6 0.1 4) Low VCE (sat) 5) Complements the 2SB1260 / (1) (2) (3) 2SB1241 / 2SB1181 0.4+0.1 -0.05 0.4 0.1 0.5 0.1 0.4 0.1 1.5 0.1 1.5 0.1 3.0 0.2 (1) Base RO

2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Transistors Power Transistor (100V , 2A) 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Features External dimensions (Units mm) 1) Darlington connection for high DC current gain. 2SD2195 4.0 2) Built-in resistor between base and emitter. 1.0 2.5 0.5 3) Built-in damper diode. (1) (2) 4) Complements the 2SB1580 / 2SB1316 / 2SB1567. (3) (1) Base(Gate)

Medium power transistor (32V, 2A) 2SD1758 / 2SD1862 Features Dimensions (Units mm) 1) Low VCE(sat). 2SD1758 2SD1862 VCE(sat) = 0.5V (Typ.) 2.5 0.2 2.3+0.2 6.8 0.2 6.5 0.2 -0.1 (IC/IB = 2A / 0.2A) C0.5 5.1+0.2 -0.1 0.5 0.1 2) Complements the 2SB1182 / 2SB1240 0.65 0.1 0.75 0.65Max. Structure 0.9 0.55 0.1 Epitaxial planar type NPN silicon transistor

2SD1868, 2SD1869 Silicon NPN Epitaxial Application Low frequency high voltage amplifier Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD1868, 2SD1869 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SA1868 2SA1869 Unit Collector to base voltage VCBO 160 200 V Collector to emitter voltage VCEO 160 200 V Emitter to base voltage VEBO 55V Collector current IC 100 100