Справочник транзисторов. 2SD1866

 

Биполярный транзистор 2SD1866 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SD1866
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 1 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 2 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 80(typ) MHz
   Ёмкость коллекторного перехода (Cc): 25 pf
   Статический коэффициент передачи тока (hfe): 1000
   Корпус транзистора: ATV

 Аналоги (замена) для 2SD1866

 

 

2SD1866 Datasheet (PDF)

 ..1. Size:87K  rohm
2sd2212 2sd2143 2sd1866.pdf

2SD1866
2SD1866

2SD2212 / 2SD2143 / 2SD1866 Transistors Medium Power Transistor (Motor, Relay drive) (6010V, 2A) 2SD2212 / 2SD2143 / 2SD1866 External dimensions (Unit : mm) Features 1) Built-in zener diode between collector and base. 2SD22124.02) Strong protection against reverse surges due to "L" 1.0 2.5 0.5 loads. (1)(2)3) Built-in resistor between base and emitter. (3)4)

 ..2. Size:71K  rohm
2sd1866 2sd2212 2sd2212 2sd2143 2sd1866 2sd2397.pdf

2SD1866
2SD1866

2SD2212 / 2SD2143 / 2SD1866 / 2SD2397TransistorsMedium Power Transistor(Motor, Relay drive) (6010V, 2A)2SD2212 / 2SD2143 / 2SD1866 / 2SD2397 Features External dimensions (Units : mm)1) Built-in zener diode between collector and base.2) Strong protection against reverse surges due to "L"4.02SD22121.0 2.5 0.5loads.(1)3) Built-in resistor between base and emitter.(2)

 8.1. Size:189K  1
2sd1228m 2sd1860.pdf

2SD1866
2SD1866

 8.3. Size:65K  1
2sd1507m 2sd1864.pdf

2SD1866

 8.4. Size:325K  1
2sd1834 2sd1468s 2sd1865.pdf

2SD1866
2SD1866

 8.5. Size:48K  1
2sd1861.pdf

2SD1866

 8.6. Size:66K  rohm
2sd2195 2sd1980 2sd1867 2sd2398.pdf

2SD1866

2SD2195 / 2SD1980 / 2SD1867 / 2SD2398TransistorsPower Transistor (100V , 2A)2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Features External dimensions (Units : mm)1) Darlington connection for high DC current gain.2SD21954.02) Built-in resistor between base and emitter.1.0 2.5 0.53) Built-in damper diode.(1)(2)4) Complements the 2SB1580 / 2SB1316 / 2SB1567.(3)(1) Base(Gate)

 8.7. Size:78K  rohm
2sd1760 2sd1864.pdf

2SD1866
2SD1866

2SD1760 / 2SD1864TransistorsPower Transistor (50V, 3A)2SD1760 / 2SD1864 External dimensions (Units : mm) Features1) Low VCE(sat).2SD1760 2SD1864 VCE(sat) = 0.5V (Typ.)2.50.26.80.22.3 +0.26.50.2 -0.1 (IC/IB = 2A / 0.2A) C0.55.1 +0.2 0.50.1 -0.12) Complements the 2SB1184 / 2SB1243.0.65Max.0.650.10.750.90.50.10.550.1 Structure2.30.2

 8.8. Size:170K  rohm
2sd1766 2sd1758 2sd1862.pdf

2SD1866
2SD1866

Medium power transistor (32V, 2A) 2SD1766 / 2SD1758 / 2SD1862 Features Dimensions (Unit : mm) 1) Low VCE(sat). 2SD1766 2SD1758VCE(sat) = 0.5V (Typ.) 4.5+0.2-0.1(IC/IB = 2A / 0.2A) 2.3+0.26.50.2-0.11.5+0.2C0.51.60.1 -0.15.1+0.2-0.1 0.50.12) Complements the 2SB1188 / 2SB1182 / 2SB1240 (1) (2) (3)0.650.10.75Structure 0.4+0.1-0.050.90.4

 8.9. Size:114K  rohm
2sd1898 2sd1733 2sd1768s 2sd1863.pdf

2SD1866
2SD1866

Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Features Dimensions (Unit : mm) 1) High VCEO, VCEO=80V 2SD18982) High IC, IC=1A (DC) 4.5+0.2-0.11.50.13) Good hFE linearity 1.60.14) Low VCE (sat) 5) Complements the 2SB1260 / (1) (2) (3) 2SB1241 / 2SB1181 0.4+0.1-0.050.40.1 0.50.1 0.40.11.50.1 1.50.13.00.2(1) BaseRO

 8.10. Size:67K  rohm
2sd1867 2sd2195.pdf

2SD1866

2SD2195 / 2SD1980 / 2SD1867 / 2SD2398TransistorsPower Transistor (100V , 2A)2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Features External dimensions (Units : mm)1) Darlington connection for high DC current gain.2SD21954.02) Built-in resistor between base and emitter.1.0 2.5 0.53) Built-in damper diode.(1)(2)4) Complements the 2SB1580 / 2SB1316 / 2SB1567.(3)(1) Base(Gate)

 8.11. Size:151K  rohm
2sd1758 2sd1862.pdf

2SD1866
2SD1866

Medium power transistor (32V, 2A) 2SD1758 / 2SD1862 Features Dimensions (Units : mm) 1) Low VCE(sat). 2SD1758 2SD1862VCE(sat) = 0.5V (Typ.) 2.50.22.3+0.2 6.80.26.50.2-0.1(IC/IB = 2A / 0.2A) C0.55.1+0.2-0.1 0.50.12) Complements the 2SB1182 / 2SB1240 0.650.10.750.65Max.Structure 0.90.550.1Epitaxial planar type NPN silicon transistor

 8.12. Size:30K  hitachi
2sd1868 2sd1869.pdf

2SD1866
2SD1866

2SD1868, 2SD1869Silicon NPN EpitaxialApplicationLow frequency high voltage amplifierOutlineTO-92MOD1. Emitter2. Collector3. Base3212SD1868, 2SD1869Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SA1868 2SA1869 UnitCollector to base voltage VCBO 160 200 VCollector to emitter voltage VCEO 160 200 VEmitter to base voltage VEBO 55VCollector current IC 100 100

 8.13. Size:25K  no
2sd186.pdf

2SD1866

Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2SC3023

 

 
Back to Top