2SD19 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Mainten

Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Maintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.(planed maintenance type, maintenance type, planed discontinued typed, discontinued type)Mainten

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Res

Ordering number:EN2507NPN Epitaxial Planar Silicon Transistor2SD1953120V/1.5A Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers. unit:mm2009AFeatures [2SD1953]8.02.7 Darlington connection.4.0 High DC current gain. Low dependence of DC current gain on temperature.3.01.60.80.80.60.51 : Emitte

Ordering number:EN2266APNP/NPN Epitaxial Planar Type Silicon Transistors2SB1270/2SD1906High-Current Switching ApplicationsApplications Package Dimensions Suitable for relay drivers, high-speed inverters,unit:mmconverters, and other general high-current switching2049Bapplications.[2SB1270/2SD1906]Features Suitable for sets whose height is restricted. Low collec

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Res

Ordering number:EN2267BPNP/NPN Epitaxial Planar Type Silicon Transistors2SB1271/2SD1907High-Current Switching ApplicationsApplications Package Dimensions Suitable for relay drivers, high-speed inverters,unit:mmconverters, and other general high-current switching2049Bapplications.[2SB1271/2SD1907]Features Suitable for sets whose height is restricted. Low collec

Ordering number:EN3971NPN Epitaxial Planar Silicon Transistor2SD1908CRT Display Horizontal DeflectionOutput ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm Especially suited for use in high-definition CRT2049Cdisplay : VCC=6 to 12V.[2SD1908] Wide ASO and highly resistant to breakdown.10.24.51.31.20.80.41 2 31 : Base2 : Coll

Ordering number:EN2263APNP/NPN Epitaxial Planar Silicon Transistors2SB1267/2SD190330V/8A High-Current Switching ApplicationsApplications Package Dimensions Suitable for relay drivers, high-speed inverters,unit:mmconverters and other general high-current switching.2049B[2SB1267/2SD1903]Features Suitable for sets whose height is restricted. Low collector to emitte

Ordering number:EN2264BPNP/NPN Epitaxial Planar Silicon Transistors2SB1268/2SD1904High-Current Switching ApplicatonsApplications Package Dimensions Suitable for relay drivers, high-speed inverters,unit:mmconverters, and other general high-current switching2049Bapplications.[2SB1268/2SD1904]Features Suitable for sets whose height is restricted. Low collector to

Ordering number:EN2468PNP/NPN Epitaxial Planar Silicon Transistors2SB1296/2SD1936AF Amplifier ApplicationsApplications Package Dimensions AF power amplifier, medium-speed switching, small-unit:mmsized motor drivers.2033[2SB1296/2SD1936]Features Large current capacity. Low collector to emitter saturation voltage. Wide ASO.B : BaseC : Collector( ) : 2SB

Ordering number : ENN2246B2SB1274/2SD1913PNP/NPN Epitaxial Planar Silicon Transistors2SB1274/2SD191360V/3A Low-FrequencyPower Amplifier ApplicationsApplicationsPackage Dimensions General power amplifier.unit : mm2041A[2SB1274/2SD1913]4.510.02.8Features3.2 Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High br

Ordering number:EN3130PNP/NPN Epitaxial Planar Silicon Transistors2SB1324/2SD1998Compact Motor Driver ApplicationsFeatures Package Dimensions Low saturation voltage.unit:mm Contains diode between collector and emitter.2038 Contains bias resistance between collector and[2SB1324/2SD1998]emitter. Large current capacity. Small-sized package making it easy to

Ordering number:EN2538APNP/NPN Triple Diffused Planar Type Silicon Transistors2SB1266/2SD1902AF Power Amplifier ApplicationsFeatures Package Dimensions Suitable for sets whose heighit is restricted.unit:mm Wide ASO (adoption of MBIT process).2049B High reliability.[2SB1266/2SD1902]E : EmitterC : Collector( ) : 2SB1266B : BaseSANYO : TO-220MFSpecification

Ordering number:EN3175PNP/NPN Epitaxial Planar Silicon Transistors2SB1325/2SD1999Compact Motor Driver ApplicationsFeatures Package Dimensions Low saturation voltage.unit:mm Contains diode between collector and emitter.2038 Contains bias resistance between base and emitter.[2SB1325/2SD1999] Large current capacity. Small-sized package making it easy to provi

Ordering number:EN2549ANPN Triple Diffused Planar Silicon Transistor2SD1958TV Horizontal Deflection OutputHigh-Current Switching ApplicationsFeatures Package Dimensions Excellent tf permitting efficient drive with lessunit:mminternal dissipation.2041A[2SD1958]4.510.02.83.22.41.61.20.70.751 2 31 : Base2.55 2.552 : Collector3 : Emitter2.55 2.55

Ordering number:EN3129PNP/NPN Epitaxial Planar Silicon Transistors2SB1323/2SD1997Compact Motor Driver ApplicationsFeatures Package Dimensions Contains input resistance (R1), base-to-emitterunit:mmresistance (RBE).2038 Contains diode between collector and emitter.[2SB1323/2SD1997] Low saturation voltage. Large current capacity. Small-sized package making

Ordering number:EN2516PNP/NPN Epitaxial Planar Silicon Transistors2SB1295/2SD1935Low-Frequency General-Purpose Amplifier ApplicationsApplications Package Dimensions AF power amplifier, medium-speed switching, small-unit:mmsized motor drivers.2018A[2SB1295/2SD1935]Features Large current capacity. Low collector to emitter saturation voltage. Very small-size

Ordering number:EN2265APNP/NPN Epitaxial Planar Type Silicon Transistors2SB1269/2SD1905High-Current Switching ApplicationsApplications Package Dimensions Suitable for relay drivers, high-speed inverters,unit:mmconverters, and other general high-current switching2049Bapplications.[2SB1269/2SD1905]Features Suitable for sets whose height is restricted. Low collec

Ordering number:EN2534NPN Epitaxial Planar Silicon Darlington Transistor2SD1981Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2006B[2SD1981]6.0Features4.75.0 Darlington connection (on-chip bias resistance,damper diode). High DC current gain. Low dependence of D

Ordering number:EN2533NPN Epitaxial Planar Silicon Transistor2SD194085V/6A, AF 25 to 30WOutput ApplicationsFeatures Package Dimensions Micaless package facilitating mounting.unit:mm Wide ASO.2041A[2SD1940]4.510.02.83.22.41.61.20.70.751 2 31 : Base2.55 2.552 : Collector3 : Emitter2.55 2.55SANYO : TO-220MLSpecificationsAbsolute Maximum

2SD2195 / 2SD1980 / 2SD1867 / 2SD2398TransistorsPower Transistor (100V , 2A)2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Features External dimensions (Units : mm)1) Darlington connection for high DC current gain.2SD21954.02) Built-in resistor between base and emitter.1.0 2.5 0.53) Built-in damper diode.(1)(2)4) Complements the 2SB1580 / 2SB1316 / 2SB1567.(3)(1) Base(Gate)

2SD2211 / 2SD1918 / 2SD1857ATransistorsPower Transistor (160V , 1.5A)2SD2211 / 2SD1918 / 2SD1857A Features External dimensions (Units : mm)1) High breakdown voltage.(BVCEO = 160V)2) Low collector output capacitance.2SD22114.01.0 2.5 0.5 (Typ. 20pF at VCB = 10V)(1)3) High transition frequency.(fT = 80MHZ)(2)4) Complements the 2SB1275 / 2SB1236A.(3)(1) Base(Gate)

Data SheetAEC-Q101 QualifiedMedium Power Transistor (50V,0.5A)2SD1949FRA / 2SD1484KFRA2SD1949 / 2SD1484KFeatures Dimensions (Unit : mm)1) High current.(IC=0.5A)UMT32) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA.(SC-70)(1) Emitter(2) Bace(3) CollectorAbsolute maximum rationgs (Ta=25 C)SMT3(SC-59)Parameter Symbol Limits Unit

Data SheetMedium Power Transistor (50V,0.5A)MediumPowerTransistor(50V,0.5A)2SD1949 / 2SD1484K2SD19492SD1484KFeatures Dimensions (Unit : mm)1) High current.(IC=0.5A)UMT32) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA.(SC-70)(1) Emitter(2) Bace(3) C

Power Transistor (100V, 2A) 2SD1980 Features Dimensions (Unit : mm) 1) Darlington connection for high DC current gain. 2SD19802) Built-in resistor between base and emitter. 6.55.12.33) Built-in damper diode. 0.54) Complements the 2SB1316. inner circuit C0.750.65B 0.92.32.3(1) (2) (3)0.51.0R1 R2(1) BaseE(2) CollectorR1 3.5k B : Base

2SB1275 / 2SB1236A / 2SB1569A / 2SB1186ATransistorsTransistors2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A(96-612-A58)(96-744-C58)277

2SD1957TransistorsTransistors2SD2061(94L-919D301)(94L-1016-D304)315

2SB1308TransistorsTransistors2SD1963(94S-166-B204)(94S-342-D204)290Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference o

Power Transistor (160V , 1.5A) 2SD1918 / 2SD1857A Features Dimensions (Unit : mm) 1) High breakdown voltage.(BVCEO=160V) 2SD19182) Low collector output capacitance. 5.5 1.5 (Typ. 20pF at VCB=10V) 3) High transition frequency.(fT=80MHZ) 0.94) Complements the 2SB1275. C0.50.8Min.1.5Absolute maximum ratings (Ta = 25C) 2.59.5Parameter Symbol Limits Unit

2SD1949 / 2SD1484KDatasheetMiddle Power Transistor (50V, 500mA)lOutlinelParameter Value SOT-323 SOT-346VCEO50VIC500mA 2SD1949 2SD1484K(UMT3) (SMT3) lFeatures lInner circuitl l1)High current. (IC=0.5A)2)Low VCE(sat) VCE(sat)400mV at IC=150mA/IB=15

Transistor2SD1993Silicon NPN epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mm6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesLow noise voltage NV.High foward current transfer ratio hFE.0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol

Transistor2SD1996Silicon NPN epitaxial planer typeUnit: mmFor low-voltage output amplification6.9 0.1 1.05 2.5 0.1For muting 0.05 (1.45)0.7 4.00.8For DC-DC converterFeatures0.65 max.Low collector to emitter saturation voltage VCE(sat).Low ON resistance Ron.High foward current transfer ratio hFE.+0.1 0.450.05Allowing supply with the radial taping.2.

Transistor2SD1995Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).0.65 max.High emitter to base voltage VEBO.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolut

Transistors2SD1994ASilicon NPN epitaxial planer typeUnit: mm2.50.11.05For low-frequency power amplification and driver amplification6.90.1 0.05 (1.45)0.7 4.0 0.8Complementary to 2SB1322A Features0.65 max. Low collector to emitter saturation voltage VCE(sat) Output of 2 W to 3 W is obtained with a complementary pair with2SB1322A+0.1 0.45-0.05 Allo

Transistor2SD1979Silicon NPN epitaxial planer typeFor low-voltage output amplificationUnit: mmFor mutingFor DC-DC converter2.1 0.10.425 1.25 0.1 0.425Features1Low ON resistance Ron.High foward current transfer ratio hFE.3S-Mini type package, allowing downsizing of the equipment and2automatic insertion through the tape packing and the magazinepacking.Absol

Transistors2SD1992ASilicon NPN epitaxial planer typeUnit: mm6.90.1 1.05 2.50.1For general amplification0.05 (1.45)0.7 4.00.8Complementary to 2SB1321A Features0.65 max. Low collector to emitter saturation voltage VCE(sat) Allowing supply with the radial taping+0.1 0.45-0.052.50.5 2.50.5 Absolute Maximum Ratings Ta = 25C1 2 3Parameter Symbol

Power Transistors2SD1975, 2SD1975ASilicon NPN triple diffusion planar typeFor high power amplificationUnit: mmComplementary to 2SB1317 and 2SB1317A 3.3 0.220.0 0.5 5.0 0.33.0FeaturesSatisfactory foward current transfer ratio hFE collector current ICcharacteristicsWide area of safe operation (ASO) 1.5High transition frequency fTOptimum for the output stage o

Transistor2SD1993Silicon NPN epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mm6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesLow noise voltage NV.High foward current transfer ratio hFE.0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol

Transistor2SD1937Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SB12975.0 0.2 4.0 0.2FeaturesHigh collector to emitter voltage VCEO.Optimum for the driver-stage of a low-frequency and 40 to 60Woutput amplifier.Allowing supply with the radial taping.0.7 0.1Absolute Maximum Ratings (Ta=25C)+0.15 +0.150.45 0.1 0.45

Transistors2SD1938(F)Silicon NPN epitaxial planar typeFor low-voltage output amplificationUnit: mm0.40+0.100.05For muting0.16+0.100.063For DC-DC converter Features Low ON resistance Ron1 2 High forward current transfer ratio hFE(0.95) (0.95) Mini type package, allowing downsizing of the equipment and1.90.12.90+0.20automatic insertion t

Transistor2SD1992ASilicon NPN epitaxial planer typeFor low-frequency power strengthening and driveUnit: mmComplementary to 2SB1321A6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesLow collector to emitter saturation voltage VCE(sat).Allowing supply with the radial taping.0.65 max.+0.1 0.450.05Absolute Maximum Ratings (Ta=25C)2.5 0.5 2.5 0.5Par

Transistor2SD1996Silicon NPN epitaxial planer typeUnit: mmFor low-voltage output amplification6.9 0.1 1.05 2.5 0.1For muting 0.05 (1.45)0.7 4.00.8For DC-DC converterFeatures0.65 max.Low collector to emitter saturation voltage VCE(sat).Low ON resistance Ron.High foward current transfer ratio hFE.+0.1 0.450.05Allowing supply with the radial taping.2.

Transistor2SD1934Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mmFor stroboscope5.0 0.2 4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with thelow-voltage power supply.Allowing supply with the radial taping.0.7 0.1Absolute Maximum Ratings (Ta=25C)Paramete

Transistor2SD1979Silicon NPN epitaxial planer typeFor low-voltage output amplificationUnit: mmFor mutingFor DC-DC converter2.1 0.10.425 1.25 0.1 0.425Features1Low ON resistance Ron.High foward current transfer ratio hFE.3S-Mini type package, allowing downsizing of the equipment and2automatic insertion through the tape packing and the magazinepacking.Absol

Transistor2SD1991ASilicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB1320A6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum Rati

Transistor2SD1994ASilicon NPN epitaxial planer typeFor low-frequency power amplification and driver amplificationUnit: mmComplementary to 2SB1322A2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesLow collector to emitter saturation voltage VCE(sat).Output of 2 to 3W is obtained with a complementary pair with0.65 max.2SB1322A.Allowing supply with the radial ta

Power Transistors2SD1985, 2SD1985ASilicon NPN triple diffusion planar typeFor power amplificationComplementary to 2SB1393 and 2SB1393AUnit: mmFeatures High forward current transfer ratio hFE which has satisfactory linearity 10.0 0.2 4.2 0.25.5 0.2 2.7 0.2 Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink wi

Power Transistors2SD1964Silicon NPN epitaxial planar typeFor power switchingUnit: mmFeatures 10.0 0.2 4.2 0.25.5 0.2 2.7 0.2 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC 3.1 0.1 Full-pack package which can be installed to the heat sink withone screwAbsolute Maxi

Transistor2SD1934Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mmFor stroboscope5.0 0.2 4.0 0.2FeaturesLow collector to emitter saturation voltage VCE(sat).Satisfactory operation performances at high efficiency with thelow-voltage power supply.Allowing supply with the radial taping.0.7 0.1Absolute Maximum Ratings (Ta=25C)Paramete

Transistor2SD1991ASilicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB1320A6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).0.65 max.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolute Maximum Rati

Transistor2SD1995Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm6.9 0.1 1.05 2.5 0.1 0.05 (1.45)0.7 4.00.8FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).0.65 max.High emitter to base voltage VEBO.Allowing supply with the radial taping.+0.1 0.450.052.5 0.5 2.5 0.5Absolut

2SD1976Silicon NPN Triple DiffusedApplicationHigh voltage switching, igniterFeature Built-in High voltage zener diode (300 V) High Speed switchingOutlineTO-220AB211. BaseID2. Collector(Flange)13. Emitter 1.6 k 160 23(Typ) (Typ)32SD1976Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 300 VCol

2SD1922Silicon NPN EpitaxialApplicationLow frequency power amplifierOutlineTO-92MOD23ID1. Emitter2. Collector3. Base13212SD1922Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 25 VCollector to emitter voltage VCEO 25 VEmitter to base voltage VEBO 6VCollector current IC 0.8 ACollector peak current ic (peak)

2SD1974Silicon NPN EpitaxialApplicationLow frequency power amplifierOutlineUPAK2, 41231ID41. Base2. Collector3. Emitter4. Collector (Flange)32SD1974Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 25 VCollector to emitter voltage VCEO 25 VEmitter to base voltage VEBO 6VCollector current IC 0.8 ACollect

2SD1978Silicon NPN Epitaxial, DarlingtonApplication Low frequency power amplifier Complementary pair with 2SB1387OutlineTO-92MOD23ID1. Emitter2 k 0.5 k2. Collector (Typ) (Typ)3. Base 13212SD1978Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to

2SD1970Silicon NPN EpitaxialApplicationLow frequency power amplifierOutlineTO-126 MOD231. Emitter ID2. Collector3. Base132 k 0.4 k23(Typ) (Typ)12SD1970Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 24 VCollector to emitter voltage VCEO 24 VEmitter to base voltage VEBO 7VCollector current IC 2ACol

2SD1910 Silicon Diffused Power TransistorGENERAL DESCRIPTIONHighvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,prim-arily for use in horizontal deflection circuites of colour television receiversQUICK REFERENCE DATA TO-3PFMSYMBOL PARAMETER CONDITIONS TYP MAX UNITCollector-emitter voltage peak value VBE = 0VVCESM - 1500 VCo

Silicon Diffused Power Transistor2SD1911GENERAL DESCRIPTIONHighvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,prim-arily for use in horizontal deflection circuites of colour television receiversQUICK REFERENCE DATA TO-3PFMSYMBOL PARAMETER CONDITIONS TYP MAX UNITCollector-emitter voltage peak value VBE = 0VVCESM - 1500 VC

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 2SD1991A TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR High Foward Current Transfer Ratio hFE 3. BASE Low Collector to Emitter Saturation Voltage VCE(sat). Allowing Supply with the Radial Taping. MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2SD1994A TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR Low Collector to Emitter Saturation Voltage 3. BASE Complementary Pair with 2SB1322A Allowing Supply with the Radial Taping MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Co

2SD1991A(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 V

2SD1936M(BR3DG1936M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features Large current capacity ,low VCE sat ,wide ASO. / Applications

SMD Type TransistorsNPN Transistors2SD1938SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=300mA Collector Emitter Voltage VCEO=20V1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Coll

SMD Type TransistorsNPN Transistors2SD19981.70 0.1 Features Low saturation voltage. Large current capacity.Collector0.42 0.10.46 0.1 Complementary to 2SB1324 Base1.Base2.CollectorRBE3.EmitterEmitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 30 V Emi

SMD Type TransistorsNPN Transistors2SD1902TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features High reliablity Complementary to 2SB12660.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltag

SMD Type TransistorsNPN Transistors2SD1950SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=25V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO

SMD Type TransistorsNPN Transistors2SD19991.70 0.1 Features Low saturation voltage. Large current capacity.Collector0.42 0.1 Complementary to 2SB1325 0.46 0.1 Base 1.Base2.CollectorRBE 3.EmitterEmitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 20 V Emitte

SMD Type TransistorsNPN Transistors2SD1974SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.8AC Collector Emitter Voltage VCEO=25V0.42 0.10.46 0.1BID1.Base2.Collector3.EmitterE Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 25 V Emitter - Ba

SMD Type TransistorsNPN Transistors2SD19971.70 0.1 Features Low saturation voltage. Large current capacity. Complementary to 2SB13230.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 6 Col

SMD Type TransistorsNPN Transistors2SD1918TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features High breakdown voltage. Low collector output capacitance.0.127 High transition frequency+0.10.80-0.1max Complementary to 2SB1275+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Max

SMD Type TransistorsNPN Transistors2SD1935SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features 3 Large current capacity. Low collector to emitter saturation voltage. Complimentary to 2SB12951 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Bas

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1912DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOWide Area of Safe OperationLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(

isc Silicon NPN Darlington Power Transistor 2SD1932DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = 3V, I = 2A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1988DESCRIPTIONHigh DC Current Gain-: h = 3000(Min)@ I = 1AFE CLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 1ACE(sat) CIncorporating a built-in zener diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow-frequency amplification

isc Silicon NPN Darlington Power Transistor 2SD1933DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = 3V, I = 2A)FE CE CComplement to Type 2SB1342Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RAT

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1976DESCRIPTIONFast Switching SpeedHigh DC Current GainBuilt-in high voltage zener diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage switchingIgniterABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base

isc Silicon NPN Power Transistor 2SD1975DESCRIPTIONGood Linearity of hFEWide Area of Safe OperationHigh DC Current-Gain Bandwidth ProductComplement to Type 2SB1317Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power amplificationOptimum for the output stage of a Hi-Fi audio amplifier.ABSOLUTE MAXIMUM RATING

isc Silicon NPN Power Transistor 2SD1985ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min.)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage-: V = 1.2V(Max,)@ I = 3ACE(sat) CComplement to Type 2SB1393AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifications.

isc Product Specificationisc Silicon NPN Power Transistor 2SD1959DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 650V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolor TV receivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1966DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFELow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

isc Silicon NPN Power Transistor 2SD1913DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SB1274Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1985 2SD1985A DESCRIPTION With TO-220Fa package High forward current transfer ratio hFE which has satisfactory linearity Low collector saturation voltage Complement to type 2SB1393 /1393A APPLICATIONS For power amplification PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplifie

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1982DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOLow Collector Saturation VoltageHigh DC Current Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorGeneral purpose power amplifie

isc Silicon NPN Power Transistor 2SD1980DESCRIPTIONDarlington connection for high DC current gainBuilt in resistor between base and emitterBuilt in damper diodeComplementary PNP types:2SB1316100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor drivers,LED driver,Power supplyABSOLUTE MAXIMUM RA

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1986DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 2AFE CCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSw

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1987DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 2AFE CCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSw

isc Product Specificationisc Silicon NPN Power Transistor 2SD198DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOExcellent Safe Operating AreaFast Switching SpeedWith TO-3 Package100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVoltage regulator.Switching mode po

isc Silicon NPN Power Transistor 2SD1985DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min.)(BR)CEOGood Linearity of hFELow Collector Saturation Voltage-: V = 1.2V(Max,)@ I = 3ACE(sat) CComplement to Type 2SB1393Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifications.A

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1923DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 2A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATION

isc Silicon NPN Power Transistor 2SD1958DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min.)(BR)CEOGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output high-currentswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon NPN Power Transistor 2SD1910DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applicaitions.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1918DESCRIPTIONHigh fTfT=80MHz(TYP)High Collector-Emitter Breakdown Voltage-: V = 160V(Min)(BR)CEOExcellent linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor drivers,LED driver,Power supplyABSOLUTE MAXIMUM RATI

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1975 2SD1975A DESCRIPTION With TO-3PL package Complement to type 2SB1317/1317A Wide area of safe operation High transition frequency fT APPLICATIONS For high power amplification Optimum for the output stage of a Hi-Fi audio amplifier PINNING PIN DESCRIPTION1 Base Collector;conne

isc Silicon NPN Darlington Power Transistor 2SD1928DESCRIPTIONCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 4ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 4AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier and lowspeed switching industrial use.ABSOLUTE

isc Silicon NPN Power Transistor 2SD1940DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 85V(Min.)(BR)CEOGood Linearity of hFEWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF 25~30W output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV

isc Silicon NPN Power Transistor 2SD1941DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for CTV/character display horizontal deflectionoutput stage applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Ba

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1983DESCRIPTIONHigh DC Current Gain: h = 4000(Min) @I = 1AFE CLow Collector Saturation Voltgae-: V = 1.5V(Max.)@ I = 1ACE(sat) CIncorporating a built-in zener diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor low-frequency amplificationAB

isc Silicon NPN Power Transistor 2SD1911DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal deflection output applicaitions.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA