2SD19 datasheet, аналоги, основные параметры
Наименование производителя: 2SD19 📄📄
Тип материала: Ge
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 25 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 0.3 A
Предельная температура PN-перехода (Tj): 125 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 0.5 MHz
Статический коэффициент передачи тока (hFE): 20
Корпус транзистора: TO5
Аналоги (замена) для 2SD19
- подборⓘ биполярного транзистора по параметрам
2SD19 даташит
2sd1994 2sd1994a.pdf
Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Mainten
2sd1991 2sd1991a.pdf
Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) Mainten
2sd1912.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Res
2sd1953.pdf
Ordering number EN2507 NPN Epitaxial Planar Silicon Transistor 2SD1953 120V/1.5A Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers. unit mm 2009A Features [2SD1953] 8.0 2.7 Darlington connection. 4.0 High DC current gain. Low dependence of DC current gain on temperature. 3.0 1.6 0.8 0.8 0.6 0.5 1 Emitte
2sd1906.pdf
Ordering number EN2266A PNP/NPN Epitaxial Planar Type Silicon Transistors 2SB1270/2SD1906 High-Current Switching Applications Applications Package Dimensions Suitable for relay drivers, high-speed inverters, unit mm converters, and other general high-current switching 2049B applications. [2SB1270/2SD1906] Features Suitable for sets whose height is restricted. Low collec
2sd1914.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Res
2sd1907.pdf
Ordering number EN2267B PNP/NPN Epitaxial Planar Type Silicon Transistors 2SB1271/2SD1907 High-Current Switching Applications Applications Package Dimensions Suitable for relay drivers, high-speed inverters, unit mm converters, and other general high-current switching 2049B applications. [2SB1271/2SD1907] Features Suitable for sets whose height is restricted. Low collec
2sd1908.pdf
Ordering number EN3971 NPN Epitaxial Planar Silicon Transistor 2SD1908 CRT Display Horizontal Deflection Output Applications Features Package Dimensions Fast switching speed. unit mm Especially suited for use in high-definition CRT 2049C display VCC=6 to 12V. [2SD1908] Wide ASO and highly resistant to breakdown. 10.2 4.5 1.3 1.2 0.8 0.4 1 2 3 1 Base 2 Coll
2sd1903.pdf
Ordering number EN2263A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1267/2SD1903 30V/8A High-Current Switching Applications Applications Package Dimensions Suitable for relay drivers, high-speed inverters, unit mm converters and other general high-current switching. 2049B [2SB1267/2SD1903] Features Suitable for sets whose height is restricted. Low collector to emitte
2sd1904.pdf
Ordering number EN2264B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1268/2SD1904 High-Current Switching Applicatons Applications Package Dimensions Suitable for relay drivers, high-speed inverters, unit mm converters, and other general high-current switching 2049B applications. [2SB1268/2SD1904] Features Suitable for sets whose height is restricted. Low collector to
2sd1936.pdf
Ordering number EN2468 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1296/2SD1936 AF Amplifier Applications Applications Package Dimensions AF power amplifier, medium-speed switching, small- unit mm sized motor drivers. 2033 [2SB1296/2SD1936] Features Large current capacity. Low collector to emitter saturation voltage. Wide ASO. B Base C Collector ( ) 2SB
2sb1274 2sd1913.pdf
Ordering number ENN2246B 2SB1274/2SD1913 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1274/2SD1913 60V/3A Low-Frequency Power Amplifier Applications Applications Package Dimensions General power amplifier. unit mm 2041A [2SB1274/2SD1913] 4.5 10.0 2.8 Features 3.2 Wide ASO (Adoption of MBIT process). Low saturation voltage. High reliability. High br
2sd1998.pdf
Ordering number EN3130 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1324/2SD1998 Compact Motor Driver Applications Features Package Dimensions Low saturation voltage. unit mm Contains diode between collector and emitter. 2038 Contains bias resistance between collector and [2SB1324/2SD1998] emitter. Large current capacity. Small-sized package making it easy to
2sd1902.pdf
Ordering number EN2538A PNP/NPN Triple Diffused Planar Type Silicon Transistors 2SB1266/2SD1902 AF Power Amplifier Applications Features Package Dimensions Suitable for sets whose heighit is restricted. unit mm Wide ASO (adoption of MBIT process). 2049B High reliability. [2SB1266/2SD1902] E Emitter C Collector ( ) 2SB1266 B Base SANYO TO-220MF Specification
2sd1999.pdf
Ordering number EN3175 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1325/2SD1999 Compact Motor Driver Applications Features Package Dimensions Low saturation voltage. unit mm Contains diode between collector and emitter. 2038 Contains bias resistance between base and emitter. [2SB1325/2SD1999] Large current capacity. Small-sized package making it easy to provi
2sd1958.pdf
Ordering number EN2549A NPN Triple Diffused Planar Silicon Transistor 2SD1958 TV Horizontal Deflection Output High-Current Switching Applications Features Package Dimensions Excellent tf permitting efficient drive with less unit mm internal dissipation. 2041A [2SD1958] 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Base 2.55 2.55 2 Collector 3 Emitter 2.55 2.55
2sd1997.pdf
Ordering number EN3129 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1323/2SD1997 Compact Motor Driver Applications Features Package Dimensions Contains input resistance (R1), base-to-emitter unit mm resistance (RBE). 2038 Contains diode between collector and emitter. [2SB1323/2SD1997] Low saturation voltage. Large current capacity. Small-sized package making
2sd1935.pdf
Ordering number EN2516 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1295/2SD1935 Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions AF power amplifier, medium-speed switching, small- unit mm sized motor drivers. 2018A [2SB1295/2SD1935] Features Large current capacity. Low collector to emitter saturation voltage. Very small-size
2sd1905.pdf
Ordering number EN2265A PNP/NPN Epitaxial Planar Type Silicon Transistors 2SB1269/2SD1905 High-Current Switching Applications Applications Package Dimensions Suitable for relay drivers, high-speed inverters, unit mm converters, and other general high-current switching 2049B applications. [2SB1269/2SD1905] Features Suitable for sets whose height is restricted. Low collec
2sd1981.pdf
Ordering number EN2534 NPN Epitaxial Planar Silicon Darlington Transistor 2SD1981 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2006B [2SD1981] 6.0 Features 4.7 5.0 Darlington connection (on-chip bias resistance, damper diode). High DC current gain. Low dependence of D
2sd1940.pdf
Ordering number EN2533 NPN Epitaxial Planar Silicon Transistor 2SD1940 85V/6A, AF 25 to 30W Output Applications Features Package Dimensions Micaless package facilitating mounting. unit mm Wide ASO. 2041A [2SD1940] 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Base 2.55 2.55 2 Collector 3 Emitter 2.55 2.55 SANYO TO-220ML Specifications Absolute Maximum
2sd2195 2sd1980 2sd1867 2sd2398.pdf
2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Transistors Power Transistor (100V , 2A) 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 Features External dimensions (Units mm) 1) Darlington connection for high DC current gain. 2SD2195 4.0 2) Built-in resistor between base and emitter. 1.0 2.5 0.5 3) Built-in damper diode. (1) (2) 4) Complements the 2SB1580 / 2SB1316 / 2SB1567. (3) (1) Base(Gate)
2sd2211 2sd1918 2sd1857a.pdf
2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor (160V , 1.5A) 2SD2211 / 2SD1918 / 2SD1857A Features External dimensions (Units mm) 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. 2SD2211 4.0 1.0 2.5 0.5 (Typ. 20pF at VCB = 10V) (1) 3) High transition frequency.(fT = 80MHZ) (2) 4) Complements the 2SB1275 / 2SB1236A. (3) (1) Base(Gate)
2sd1949fra 2sd1484kfra.pdf
Data Sheet AEC-Q101 Qualified Medium Power Transistor (50V,0.5A) 2SD1949FRA / 2SD1484KFRA 2SD1949 / 2SD1484K Features Dimensions (Unit mm) 1) High current.(IC=0.5A) UMT3 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. (SC-70) (1) Emitter (2) Bace (3) Collector Absolute maximum rationgs (Ta=25 C) SMT3 (SC-59) Parameter Symbol Limits Unit
2sd1949 2sd1949 2sd1484k.pdf
Data Sheet Medium Power Transistor (50V,0.5A) M e d i u m P o w e r T r a n s i s t o r ( 5 0 V , 0 . 5 A ) 2SD1949 / 2SD1484K 2 S D 1 9 4 9 2 S D 1 4 8 4 K Features Dimensions (Unit mm) 1) High current.(IC=0.5A) UMT3 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. (SC-70) (1) Emitter (2) Bace (3) C
2sd1980.pdf
Power Transistor (100V, 2A) 2SD1980 Features Dimensions (Unit mm) 1) Darlington connection for high DC current gain. 2SD1980 2) Built-in resistor between base and emitter. 6.5 5.1 2.3 3) Built-in damper diode. 0.5 4) Complements the 2SB1316. inner circuit C 0.75 0.65 B 0.9 2.3 2.3 (1) (2) (3) 0.5 1.0 R1 R2 (1) Base E (2) Collector R1 3.5k B Base
2sb1275 2sb1236a 2sb1569a 2sb1186a 2sd2211 2sd1918 2sd1857a 2sd2400a 2sd1763a.pdf
2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A Transistors Transistors 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A (96-612-A58) (96-744-C58) 277
2sd1957.pdf
2SD1957 Transistors Transistors 2SD2061 (94L-919 D301) (94L-1016-D304) 315
2sb1308 2sd1963.pdf
2SB1308 Transistors Transistors 2SD1963 (94S-166-B204) (94S-342-D204) 290 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference o
2sd1918.pdf
Power Transistor (160V , 1.5A) 2SD1918 / 2SD1857A Features Dimensions (Unit mm) 1) High breakdown voltage.(BVCEO=160V) 2SD1918 2) Low collector output capacitance. 5.5 1.5 (Typ. 20pF at VCB=10V) 3) High transition frequency.(fT=80MHZ) 0.9 4) Complements the 2SB1275. C0.5 0.8Min. 1.5 Absolute maximum ratings (Ta = 25 C) 2.5 9.5 Parameter Symbol Limits Unit
2sd1949 2sd1484k.pdf
2SD1949 / 2SD1484K Datasheet Middle Power Transistor (50V, 500mA) lOutline l Parameter Value SOT-323 SOT-346 VCEO 50V IC 500mA 2SD1949 2SD1484K (UMT3) (SMT3) lFeatures lInner circuit l l 1)High current. (IC=0.5A) 2)Low VCE(sat) VCE(sat) 400mV at IC=150mA/IB=15
2sd1993 e.pdf
Transistor 2SD1993 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit mm 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low noise voltage NV. High foward current transfer ratio hFE. 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol
2sd1996.pdf
Transistor 2SD1996 Silicon NPN epitaxial planer type Unit mm For low-voltage output amplification 6.9 0.1 1.05 2.5 0.1 For muting 0.05 (1.45) 0.7 4.0 0.8 For DC-DC converter Features 0.65 max. Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. +0.1 0.45 0.05 Allowing supply with the radial taping. 2.
2sd1995 e.pdf
Transistor 2SD1995 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 0.65 max. High emitter to base voltage VEBO. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolut
2sd1994.pdf
Transistors 2SD1994A Silicon NPN epitaxial planer type Unit mm 2.5 0.1 1.05 For low-frequency power amplification and driver amplification 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Complementary to 2SB1322A Features 0.65 max. Low collector to emitter saturation voltage VCE(sat) Output of 2 W to 3 W is obtained with a complementary pair with 2SB1322A +0.1 0.45-0.05 Allo
2sd1979 e.pdf
Transistor 2SD1979 Silicon NPN epitaxial planer type For low-voltage output amplification Unit mm For muting For DC-DC converter 2.1 0.1 0.425 1.25 0.1 0.425 Features 1 Low ON resistance Ron. High foward current transfer ratio hFE. 3 S-Mini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing and the magazine packing. Absol
2sd1992.pdf
Transistors 2SD1992A Silicon NPN epitaxial planer type Unit mm 6.9 0.1 1.05 2.5 0.1 For general amplification 0.05 (1.45) 0.7 4.0 0.8 Complementary to 2SB1321A Features 0.65 max. Low collector to emitter saturation voltage VCE(sat) Allowing supply with the radial taping +0.1 0.45-0.05 2.5 0.5 2.5 0.5 Absolute Maximum Ratings Ta = 25 C 1 2 3 Parameter Symbol
2sd1975.pdf
Power Transistors 2SD1975, 2SD1975A Silicon NPN triple diffusion planar type For high power amplification Unit mm Complementary to 2SB1317 and 2SB1317A 3.3 0.2 20.0 0.5 5.0 0.3 3.0 Features Satisfactory foward current transfer ratio hFE collector current IC characteristics Wide area of safe operation (ASO) 1.5 High transition frequency fT Optimum for the output stage o
2sd1993.pdf
Transistor 2SD1993 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit mm 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low noise voltage NV. High foward current transfer ratio hFE. 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol
2sd1937 e.pdf
Transistor 2SD1937 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SB1297 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver-stage of a low-frequency and 40 to 60W output amplifier. Allowing supply with the radial taping. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) +0.15 +0.15 0.45 0.1 0.45
2sd1938.pdf
Transistors 2SD1938(F) Silicon NPN epitaxial planar type For low-voltage output amplification Unit mm 0.40+0.10 0.05 For muting 0.16+0.10 0.06 3 For DC-DC converter Features Low ON resistance Ron 1 2 High forward current transfer ratio hFE (0.95) (0.95) Mini type package, allowing downsizing of the equipment and 1.9 0.1 2.90+0.20 automatic insertion t
2sd1992a e.pdf
Transistor 2SD1992A Silicon NPN epitaxial planer type For low-frequency power strengthening and drive Unit mm Complementary to 2SB1321A 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.65 max. +0.1 0.45 0.05 Absolute Maximum Ratings (Ta=25 C) 2.5 0.5 2.5 0.5 Par
2sd1996 e.pdf
Transistor 2SD1996 Silicon NPN epitaxial planer type Unit mm For low-voltage output amplification 6.9 0.1 1.05 2.5 0.1 For muting 0.05 (1.45) 0.7 4.0 0.8 For DC-DC converter Features 0.65 max. Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. +0.1 0.45 0.05 Allowing supply with the radial taping. 2.
2sd1934.pdf
Transistor 2SD1934 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm For stroboscope 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. Allowing supply with the radial taping. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Paramete
2sd1979.pdf
Transistor 2SD1979 Silicon NPN epitaxial planer type For low-voltage output amplification Unit mm For muting For DC-DC converter 2.1 0.1 0.425 1.25 0.1 0.425 Features 1 Low ON resistance Ron. High foward current transfer ratio hFE. 3 S-Mini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing and the magazine packing. Absol
2sd1991a e.pdf
Transistor 2SD1991A Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB1320A 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maximum Rati
2sd1994a e.pdf
Transistor 2SD1994A Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Unit mm Complementary to 2SB1322A 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Output of 2 to 3W is obtained with a complementary pair with 0.65 max. 2SB1322A. Allowing supply with the radial ta
2sd1985.pdf
Power Transistors 2SD1985, 2SD1985A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1393 and 2SB1393A Unit mm Features High forward current transfer ratio hFE which has satisfactory linearity 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink wi
2sd1964.pdf
Power Transistors 2SD1964 Silicon NPN epitaxial planar type For power switching Unit mm Features 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC 3.1 0.1 Full-pack package which can be installed to the heat sink with one screw Absolute Maxi
2sd1934 e.pdf
Transistor 2SD1934 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm For stroboscope 5.0 0.2 4.0 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. Allowing supply with the radial taping. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Paramete
2sd1991.pdf
Transistor 2SD1991A Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB1320A 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 0.65 max. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolute Maximum Rati
2sd1995.pdf
Transistor 2SD1995 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 6.9 0.1 1.05 2.5 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 0.65 max. High emitter to base voltage VEBO. Allowing supply with the radial taping. +0.1 0.45 0.05 2.5 0.5 2.5 0.5 Absolut
2sd1976.pdf
2SD1976 Silicon NPN Triple Diffused Application High voltage switching, igniter Feature Built-in High voltage zener diode (300 V) High Speed switching Outline TO-220AB 2 1 1. Base ID 2. Collector (Flange) 1 3. Emitter 1.6 k 160 2 3 (Typ) (Typ) 3 2SD1976 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 300 V Col
2sd1922.pdf
2SD1922 Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-92MOD 2 3 ID 1. Emitter 2. Collector 3. Base 1 3 2 1 2SD1922 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 25 V Emitter to base voltage VEBO 6V Collector current IC 0.8 A Collector peak current ic (peak)
2sd1974.pdf
2SD1974 Silicon NPN Epitaxial Application Low frequency power amplifier Outline UPAK 2, 4 1 2 3 1 ID 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 3 2SD1974 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 25 V Emitter to base voltage VEBO 6V Collector current IC 0.8 A Collect
2sd1978.pdf
2SD1978 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Complementary pair with 2SB1387 Outline TO-92MOD 2 3 ID 1. Emitter 2 k 0.5 k 2. Collector (Typ) (Typ) 3. Base 1 3 2 1 2SD1978 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to
2sd1970.pdf
2SD1970 Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 2 3 1. Emitter ID 2. Collector 3. Base 1 32 k 0.4 k 2 3 (Typ) (Typ) 1 2SD1970 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 24 V Collector to emitter voltage VCEO 24 V Emitter to base voltage VEBO 7V Collector current IC 2A Col
2sd1910.pdf
2SD1910 Silicon Diffused Power Transistor GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,prim- arily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA TO-3PFM SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 1500 V Co
2sd1911.pdf
Silicon Diffused Power Transistor 2SD1911 GENERAL DESCRIPTION Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated efficiency diode,prim- arily for use in horizontal deflection circuites of colour television receivers QUICK REFERENCE DATA TO-3PFM SYMBOL PARAMETER CONDITIONS TYP MAX UNIT Collector-emitter voltage peak value VBE = 0V VCESM - 1500 V C
2sd1991a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 2SD1991A TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR High Foward Current Transfer Ratio hFE 3. BASE Low Collector to Emitter Saturation Voltage VCE(sat). Allowing Supply with the Radial Taping. MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter
2sd1994a.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2SD1994A TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR Low Collector to Emitter Saturation Voltage 3. BASE Complementary Pair with 2SB1322A Allowing Supply with the Radial Taping MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Co
2sd1991a.pdf
2SD1991A(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V
2sd1936m.pdf
2SD1936M(BR3DG1936M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features Large current capacity ,low VCE sat ,wide ASO. / Applications
2sd1938.pdf
SMD Type Transistors NPN Transistors 2SD1938 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=300mA Collector Emitter Voltage VCEO=20V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Coll
2sd1998.pdf
SMD Type Transistors NPN Transistors 2SD1998 1.70 0.1 Features Low saturation voltage. Large current capacity. Collector 0.42 0.1 0.46 0.1 Complementary to 2SB1324 Base 1.Base 2.Collector RBE 3.Emitter Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 30 V Emi
2sd1902.pdf
SMD Type Transistors NPN Transistors 2SD1902 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features High reliablity Complementary to 2SB1266 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltag
2sd1950.pdf
SMD Type Transistors NPN Transistors 2SD1950 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=25V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO
2sd1999.pdf
SMD Type Transistors NPN Transistors 2SD1999 1.70 0.1 Features Low saturation voltage. Large current capacity. Collector 0.42 0.1 Complementary to 2SB1325 0.46 0.1 Base 1.Base 2.Collector RBE 3.Emitter Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 20 V Emitte
2sd1974.pdf
SMD Type Transistors NPN Transistors 2SD1974 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=0.8A C Collector Emitter Voltage VCEO=25V 0.42 0.1 0.46 0.1 B ID 1.Base 2.Collector 3.Emitter E Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 25 V Emitter - Ba
2sd1997.pdf
SMD Type Transistors NPN Transistors 2SD1997 1.70 0.1 Features Low saturation voltage. Large current capacity. Complementary to 2SB1323 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 6 Col
2sd1918.pdf
SMD Type Transistors NPN Transistors 2SD1918 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features High breakdown voltage. Low collector output capacitance. 0.127 High transition frequency +0.1 0.80-0.1 max Complementary to 2SB1275 + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Max
2sd1935.pdf
SMD Type Transistors NPN Transistors 2SD1935 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 Large current capacity. Low collector to emitter saturation voltage. Complimentary to 2SB1295 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Bas
2sd1912.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1912 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Wide Area of Safe Operation Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(
2sd1932.pdf
isc Silicon NPN Darlington Power Transistor 2SD1932 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@ (V = 3V, I = 2A) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA
2sd1988.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1988 DESCRIPTION High DC Current Gain- h = 3000(Min)@ I = 1A FE C Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 1A CE(sat) C Incorporating a built-in zener diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low-frequency amplification
2sd1933.pdf
isc Silicon NPN Darlington Power Transistor 2SD1933 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@ (V = 3V, I = 2A) FE CE C Complement to Type 2SB1342 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RAT
2sd1976.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1976 DESCRIPTION Fast Switching Speed High DC Current Gain Built-in high voltage zener diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage switching Igniter ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base
2sd1975.pdf
isc Silicon NPN Power Transistor 2SD1975 DESCRIPTION Good Linearity of h FE Wide Area of Safe Operation High DC Current-Gain Bandwidth Product Complement to Type 2SB1317 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power amplification Optimum for the output stage of a Hi-Fi audio amplifier. ABSOLUTE MAXIMUM RATING
2sd1985a.pdf
isc Silicon NPN Power Transistor 2SD1985A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min.) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage- V = 1.2V(Max,)@ I = 3A CE(sat) C Complement to Type 2SB1393A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifications.
2sd1959.pdf
isc Product Specification isc Silicon NPN Power Transistor 2SD1959 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 650V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB
2sd1966.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1966 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR
2sd1913.pdf
isc Silicon NPN Power Transistor 2SD1913 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SB1274 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE
2sd1985 2sd1985a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1985 2SD1985A DESCRIPTION With TO-220Fa package High forward current transfer ratio hFE which has satisfactory linearity Low collector saturation voltage Complement to type 2SB1393 /1393A APPLICATIONS For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplifie
2sd1982.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1982 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Low Collector Saturation Voltage High DC Current Gain 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator General purpose power amplifie
2sd1980.pdf
isc Silicon NPN Power Transistor 2SD1980 DESCRIPTION Darlington connection for high DC current gain Built in resistor between base and emitter Built in damper diode Complementary PNP types 2SB1316 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Motor drivers,LED driver,Power supply ABSOLUTE MAXIMUM RA
2sd1986.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1986 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 2A FE C Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Sw
2sd1987.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1987 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 2A FE C Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Sw
2sd198.pdf
isc Product Specification isc Silicon NPN Power Transistor 2SD198 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Excellent Safe Operating Area Fast Switching Speed With TO-3 Package 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Voltage regulator. Switching mode po
2sd1985.pdf
isc Silicon NPN Power Transistor 2SD1985 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min.) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage- V = 1.2V(Max,)@ I = 3A CE(sat) C Complement to Type 2SB1393 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifications. A
2sd1923.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1923 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 2A, V = 3V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATION
2sd1910.pdf
isc Silicon NPN Power Transistor 2SD1910 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applicaitions. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA
2sd1918.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1918 DESCRIPTION High fT fT=80MHz(TYP) High Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO Excellent linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Motor drivers,LED driver,Power supply ABSOLUTE MAXIMUM RATI
2sd1975 2sd1975a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1975 2SD1975A DESCRIPTION With TO-3PL package Complement to type 2SB1317/1317A Wide area of safe operation High transition frequency fT APPLICATIONS For high power amplification Optimum for the output stage of a Hi-Fi audio amplifier PINNING PIN DESCRIPTION 1 Base Collector;conne
2sd1928.pdf
isc Silicon NPN Darlington Power Transistor 2SD1928 DESCRIPTION Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 4A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 4A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed switching industrial use. ABSOLUTE
2sd1940.pdf
isc Silicon NPN Power Transistor 2SD1940 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 85V(Min.) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF 25 30W output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
2sd1941.pdf
isc Silicon NPN Power Transistor 2SD1941 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for CTV/character display horizontal deflection output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Ba
2sd1983.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1983 DESCRIPTION High DC Current Gain h = 4000(Min) @I = 1A FE C Low Collector Saturation Voltgae- V = 1.5V(Max.)@ I = 1A CE(sat) C Incorporating a built-in zener diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For low-frequency amplification AB
2sd1911.pdf
isc Silicon NPN Power Transistor 2SD1911 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV horizontal deflection output applicaitions. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA
Другие транзисторы: 2SD1893, 2SD1894, 2SD1895, 2SD1896, 2SD1897, 2SD1898, 2SD1899, 2SD189A, TIP41C, 2SD190, 2SD1900, 2SD1901, 2SD1902, 2SD1902Q, 2SD1902R, 2SD1902S, 2SD1903
History: RT1N136S
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