2SD1941 Datasheet. Equivalente

 ..1. Size:215K  inchange semiconductor
 2sd1941.pdf

isc Silicon NPN Power Transistor 2SD1941 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for CTV/character display horizontal deflection output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Ba

 8.1. Size:44K  1
 2sd189x 2sd190x 2sd191x 2sd192x 2sd193x 2sd194x.pdf

 8.2. Size:231K  toshiba
 2sd1947a.pdf

 8.3. Size:221K  toshiba
 2sd1947.pdf

 8.4. Size:83K  sanyo
 2sd1940.pdf

Ordering number EN2533 NPN Epitaxial Planar Silicon Transistor 2SD1940 85V/6A, AF 25 to 30W Output Applications Features Package Dimensions Micaless package facilitating mounting. unit mm Wide ASO. 2041A [2SD1940] 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Base 2.55 2.55 2 Collector 3 Emitter 2.55 2.55 SANYO TO-220ML Specifications Absolute Maximum

 8.5. Size:29K  rohm
 2sd1944.pdf

 8.6. Size:977K  rohm
 2sd1949fra 2sd1484kfra.pdf

Data Sheet AEC-Q101 Qualified Medium Power Transistor (50V,0.5A) 2SD1949FRA / 2SD1484KFRA 2SD1949 / 2SD1484K Features Dimensions (Unit mm) 1) High current.(IC=0.5A) UMT3 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. (SC-70) (1) Emitter (2) Bace (3) Collector Absolute maximum rationgs (Ta=25 C) SMT3 (SC-59) Parameter Symbol Limits Unit

 8.7. Size:106K  rohm
 2sd1949 2sd1949 2sd1484k.pdf

Data Sheet Medium Power Transistor (50V,0.5A) M e d i u m P o w e r T r a n s i s t o r ( 5 0 V , 0 . 5 A ) 2SD1949 / 2SD1484K 2 S D 1 9 4 9 2 S D 1 4 8 4 K Features Dimensions (Unit mm) 1) High current.(IC=0.5A) UMT3 2) Low saturation voltage, typically VCE(sat)=0.1V at IC / IB=150mA / 15mA. (SC-70) (1) Emitter (2) Bace (3) C

 8.8. Size:1672K  rohm
 2sd1949 2sd1484k.pdf

2SD1949 / 2SD1484K Datasheet Middle Power Transistor (50V, 500mA) lOutline l Parameter Value SOT-323 SOT-346 VCEO 50V IC 500mA 2SD1949 2SD1484K (UMT3) (SMT3) lFeatures lInner circuit l l 1)High current. (IC=0.5A) 2)Low VCE(sat) VCE(sat) 400mV at IC=150mA/IB=15

 8.9. Size:213K  inchange semiconductor
 2sd1940.pdf

isc Silicon NPN Power Transistor 2SD1940 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 85V(Min.) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF 25 30W output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V