2SD1959 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1959  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 50 W

Tensión colector-base (Vcb): 1400 V

Tensión colector-emisor (Vce): 650 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 8

Encapsulados: TO218

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2SD1959 datasheet

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 2sd1959.pdf pdf_icon

2SD1959

isc Product Specification isc Silicon NPN Power Transistor 2SD1959 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 650V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

 8.1. Size:74K  sanyo
 2sd1953.pdf pdf_icon

2SD1959

Ordering number EN2507 NPN Epitaxial Planar Silicon Transistor 2SD1953 120V/1.5A Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers. unit mm 2009A Features [2SD1953] 8.0 2.7 Darlington connection. 4.0 High DC current gain. Low dependence of DC current gain on temperature. 3.0 1.6 0.8 0.8 0.6 0.5 1 Emitte

 8.2. Size:85K  sanyo
 2sd1958.pdf pdf_icon

2SD1959

Ordering number EN2549A NPN Triple Diffused Planar Silicon Transistor 2SD1958 TV Horizontal Deflection Output High-Current Switching Applications Features Package Dimensions Excellent tf permitting efficient drive with less unit mm internal dissipation. 2041A [2SD1958] 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Base 2.55 2.55 2 Collector 3 Emitter 2.55 2.55

 8.3. Size:255K  nec
 2sd1950.pdf pdf_icon

2SD1959

MOSTRAR MÁS

Otros transistores... 2SD1950, 2SD1951, 2SD1952, 2SD1953, 2SD1955, 2SD1956, 2SD1957, 2SD1958, 2N3904, 2SD196, 2SD1960, 2SD1961, 2SD1962M, 2SD1963, 2SD1964, 2SD1965, 2SD1966