2SD1959 Datasheet. Specs and Replacement
Type Designator: 2SD1959 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 1400 V
Maximum Collector-Emitter Voltage |Vce|: 650 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 8
Package: TO218
2SD1959 Substitution
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2SD1959 datasheet
isc Product Specification isc Silicon NPN Power Transistor 2SD1959 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 650V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒
Ordering number EN2507 NPN Epitaxial Planar Silicon Transistor 2SD1953 120V/1.5A Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers. unit mm 2009A Features [2SD1953] 8.0 2.7 Darlington connection. 4.0 High DC current gain. Low dependence of DC current gain on temperature. 3.0 1.6 0.8 0.8 0.6 0.5 1 Emitte... See More ⇒
Ordering number EN2549A NPN Triple Diffused Planar Silicon Transistor 2SD1958 TV Horizontal Deflection Output High-Current Switching Applications Features Package Dimensions Excellent tf permitting efficient drive with less unit mm internal dissipation. 2041A [2SD1958] 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Base 2.55 2.55 2 Collector 3 Emitter 2.55 2.55... See More ⇒
Detailed specifications: 2SD1950, 2SD1951, 2SD1952, 2SD1953, 2SD1955, 2SD1956, 2SD1957, 2SD1958, 2N3904, 2SD196, 2SD1960, 2SD1961, 2SD1962M, 2SD1963, 2SD1964, 2SD1965, 2SD1966
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