2SD1959 Datasheet. Specs and Replacement

Type Designator: 2SD1959  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Base Voltage |Vcb|: 1400 V

Maximum Collector-Emitter Voltage |Vce|: 650 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 8

Noise Figure, dB: -

Package: TO218

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2SD1959 datasheet

 ..1. Size:190K  inchange semiconductor

2sd1959.pdf pdf_icon

2SD1959

isc Product Specification isc Silicon NPN Power Transistor 2SD1959 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 650V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒

 8.1. Size:74K  sanyo

2sd1953.pdf pdf_icon

2SD1959

Ordering number EN2507 NPN Epitaxial Planar Silicon Transistor 2SD1953 120V/1.5A Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers. unit mm 2009A Features [2SD1953] 8.0 2.7 Darlington connection. 4.0 High DC current gain. Low dependence of DC current gain on temperature. 3.0 1.6 0.8 0.8 0.6 0.5 1 Emitte... See More ⇒

 8.2. Size:85K  sanyo

2sd1958.pdf pdf_icon

2SD1959

Ordering number EN2549A NPN Triple Diffused Planar Silicon Transistor 2SD1958 TV Horizontal Deflection Output High-Current Switching Applications Features Package Dimensions Excellent tf permitting efficient drive with less unit mm internal dissipation. 2041A [2SD1958] 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Base 2.55 2.55 2 Collector 3 Emitter 2.55 2.55... See More ⇒

 8.3. Size:255K  nec

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2SD1959

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Detailed specifications: 2SD1950, 2SD1951, 2SD1952, 2SD1953, 2SD1955, 2SD1956, 2SD1957, 2SD1958, 2N3904, 2SD196, 2SD1960, 2SD1961, 2SD1962M, 2SD1963, 2SD1964, 2SD1965, 2SD1966

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