2SD1976 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SD1976Silicon NPN Triple DiffusedApplicationHigh voltage switching, igniterFeature Built-in High voltage zener diode (300 V) High Speed switchingOutlineTO-220AB211. BaseID2. Collector(Flange)13. Emitter 1.6 k 160 23(Typ) (Typ)32SD1976Absolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 300 VCol

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1976DESCRIPTIONFast Switching SpeedHigh DC Current GainBuilt-in high voltage zener diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage switchingIgniterABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base

Transistor2SD1979Silicon NPN epitaxial planer typeFor low-voltage output amplificationUnit: mmFor mutingFor DC-DC converter2.1 0.10.425 1.25 0.1 0.425Features1Low ON resistance Ron.High foward current transfer ratio hFE.3S-Mini type package, allowing downsizing of the equipment and2automatic insertion through the tape packing and the magazinepacking.Absol

Power Transistors2SD1975, 2SD1975ASilicon NPN triple diffusion planar typeFor high power amplificationUnit: mmComplementary to 2SB1317 and 2SB1317A 3.3 0.220.0 0.5 5.0 0.33.0FeaturesSatisfactory foward current transfer ratio hFE collector current ICcharacteristicsWide area of safe operation (ASO) 1.5High transition frequency fTOptimum for the output stage o

Transistor2SD1979Silicon NPN epitaxial planer typeFor low-voltage output amplificationUnit: mmFor mutingFor DC-DC converter2.1 0.10.425 1.25 0.1 0.425Features1Low ON resistance Ron.High foward current transfer ratio hFE.3S-Mini type package, allowing downsizing of the equipment and2automatic insertion through the tape packing and the magazinepacking.Absol

2SD1974Silicon NPN EpitaxialApplicationLow frequency power amplifierOutlineUPAK2, 41231ID41. Base2. Collector3. Emitter4. Collector (Flange)32SD1974Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 25 VCollector to emitter voltage VCEO 25 VEmitter to base voltage VEBO 6VCollector current IC 0.8 ACollect

2SD1978Silicon NPN Epitaxial, DarlingtonApplication Low frequency power amplifier Complementary pair with 2SB1387OutlineTO-92MOD23ID1. Emitter2 k 0.5 k2. Collector (Typ) (Typ)3. Base 13212SD1978Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to

2SD1970Silicon NPN EpitaxialApplicationLow frequency power amplifierOutlineTO-126 MOD231. Emitter ID2. Collector3. Base132 k 0.4 k23(Typ) (Typ)12SD1970Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 24 VCollector to emitter voltage VCEO 24 VEmitter to base voltage VEBO 7VCollector current IC 2ACol

SMD Type TransistorsNPN Transistors2SD1974SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.8AC Collector Emitter Voltage VCEO=25V0.42 0.10.46 0.1BID1.Base2.Collector3.EmitterE Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 25 V Emitter - Ba

isc Silicon NPN Power Transistor 2SD1975DESCRIPTIONGood Linearity of hFEWide Area of Safe OperationHigh DC Current-Gain Bandwidth ProductComplement to Type 2SB1317Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power amplificationOptimum for the output stage of a Hi-Fi audio amplifier.ABSOLUTE MAXIMUM RATING

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1975 2SD1975A DESCRIPTION With TO-3PL package Complement to type 2SB1317/1317A Wide area of safe operation High transition frequency fT APPLICATIONS For high power amplification Optimum for the output stage of a Hi-Fi audio amplifier PINNING PIN DESCRIPTION1 Base Collector;conne