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2SD1976 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD1976
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 40 W
   Tensión colector-base (Vcb): 300 V
   Tensión colector-emisor (Vce): 300 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 6 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 500
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de transistor bipolar 2SD1976

 

2SD1976 Datasheet (PDF)

 ..1. Size:36K  hitachi
2sd1976.pdf pdf_icon

2SD1976

2SD1976 Silicon NPN Triple Diffused Application High voltage switching, igniter Feature Built-in High voltage zener diode (300 V) High Speed switching Outline TO-220AB 2 1 1. Base ID 2. Collector (Flange) 1 3. Emitter 1.6 k 160 2 3 (Typ) (Typ) 3 2SD1976 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 300 V Col

 ..2. Size:189K  inchange semiconductor
2sd1976.pdf pdf_icon

2SD1976

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1976 DESCRIPTION Fast Switching Speed High DC Current Gain Built-in high voltage zener diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage switching Igniter ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base

 8.1. Size:42K  panasonic
2sd1979 e.pdf pdf_icon

2SD1976

Transistor 2SD1979 Silicon NPN epitaxial planer type For low-voltage output amplification Unit mm For muting For DC-DC converter 2.1 0.1 0.425 1.25 0.1 0.425 Features 1 Low ON resistance Ron. High foward current transfer ratio hFE. 3 S-Mini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing and the magazine packing. Absol

 8.2. Size:54K  panasonic
2sd1975.pdf pdf_icon

2SD1976

Power Transistors 2SD1975, 2SD1975A Silicon NPN triple diffusion planar type For high power amplification Unit mm Complementary to 2SB1317 and 2SB1317A 3.3 0.2 20.0 0.5 5.0 0.3 3.0 Features Satisfactory foward current transfer ratio hFE collector current IC characteristics Wide area of safe operation (ASO) 1.5 High transition frequency fT Optimum for the output stage o

Otros transistores... 2SD196A , 2SD197 , 2SD1970 , 2SD1971 , 2SD1972 , 2SD1973 , 2SD1974 , 2SD1975 , TIP42C , 2SD1977 , 2SD1978 , 2SD1979 , 2SD197A , 2SD198 , 2SD1980 , 2SD1981 , 2SD1982 .

History: 2SA1878 | 2SC3014

 

 
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