2SD1976 - Даташиты. Аналоги. Основные параметры

2SD1976 Silicon NPN Triple Diffused Application High voltage switching, igniter Feature Built-in High voltage zener diode (300 V) High Speed switching Outline TO-220AB 2 1 1. Base ID 2. Collector (Flange) 1 3. Emitter 1.6 k 160 2 3 (Typ) (Typ) 3 2SD1976 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Rating Unit Collector to base voltage VCBO 300 V Col

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1976 DESCRIPTION Fast Switching Speed High DC Current Gain Built-in high voltage zener diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage switching Igniter ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base

Transistor 2SD1979 Silicon NPN epitaxial planer type For low-voltage output amplification Unit mm For muting For DC-DC converter 2.1 0.1 0.425 1.25 0.1 0.425 Features 1 Low ON resistance Ron. High foward current transfer ratio hFE. 3 S-Mini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing and the magazine packing. Absol

Power Transistors 2SD1975, 2SD1975A Silicon NPN triple diffusion planar type For high power amplification Unit mm Complementary to 2SB1317 and 2SB1317A 3.3 0.2 20.0 0.5 5.0 0.3 3.0 Features Satisfactory foward current transfer ratio hFE collector current IC characteristics Wide area of safe operation (ASO) 1.5 High transition frequency fT Optimum for the output stage o

Transistor 2SD1979 Silicon NPN epitaxial planer type For low-voltage output amplification Unit mm For muting For DC-DC converter 2.1 0.1 0.425 1.25 0.1 0.425 Features 1 Low ON resistance Ron. High foward current transfer ratio hFE. 3 S-Mini type package, allowing downsizing of the equipment and 2 automatic insertion through the tape packing and the magazine packing. Absol

2SD1974 Silicon NPN Epitaxial Application Low frequency power amplifier Outline UPAK 2, 4 1 2 3 1 ID 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 3 2SD1974 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 25 V Emitter to base voltage VEBO 6V Collector current IC 0.8 A Collect

2SD1978 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Complementary pair with 2SB1387 Outline TO-92MOD 2 3 ID 1. Emitter 2 k 0.5 k 2. Collector (Typ) (Typ) 3. Base 1 3 2 1 2SD1978 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to

2SD1970 Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 2 3 1. Emitter ID 2. Collector 3. Base 1 32 k 0.4 k 2 3 (Typ) (Typ) 1 2SD1970 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 24 V Collector to emitter voltage VCEO 24 V Emitter to base voltage VEBO 7V Collector current IC 2A Col

SMD Type Transistors NPN Transistors 2SD1974 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=0.8A C Collector Emitter Voltage VCEO=25V 0.42 0.1 0.46 0.1 B ID 1.Base 2.Collector 3.Emitter E Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 25 V Emitter - Ba

isc Silicon NPN Power Transistor 2SD1975 DESCRIPTION Good Linearity of h FE Wide Area of Safe Operation High DC Current-Gain Bandwidth Product Complement to Type 2SB1317 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power amplification Optimum for the output stage of a Hi-Fi audio amplifier. ABSOLUTE MAXIMUM RATING

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1975 2SD1975A DESCRIPTION With TO-3PL package Complement to type 2SB1317/1317A Wide area of safe operation High transition frequency fT APPLICATIONS For high power amplification Optimum for the output stage of a Hi-Fi audio amplifier PINNING PIN DESCRIPTION 1 Base Collector;conne