2SD20 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SD2088 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2088 Micro Motor Drive, Hammer Drive Applications Unit mm Switching Applications Power Amplifier Applications High DC current gain hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C B Zener diode included between c

2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications Unit mm Low saturation voltage VCE (sat) = 0.4 V (typ.) (IC = 2A / IB = 0.2A) High power dissipation PC = 25 W (Tc = 25 C) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage

Ordering number EN2752B NPN Triple Diffused Planar Silicon Darlington Transistor 2SD2049 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2049C [2SD2049] 10.2 4.5 Features 1.3 Suitable for sets whose height is restricted. High DC current gain. Large current capacity and wi

Ordering number EN2803 NPN Epitaxial Planar Silicon Transistor 2SD2028 Low-Frequency Power Amplifier Applications Features Package Dimensions With Zener diode (11 3V) between collector and unit mm base. 2018B Large current capacity. [2SD2028] Low collector-to-emitter saturation voltage. 0.4 Ultrasmall-sized package permitting the 2SD2028- 0.16 3 applied sets to

Ordering number EN2751B NPN Triple Diffused Planar Silicon Darlington Transistor 2SD2048 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2049C [2SD2048] 10.2 4.5 Features 1.3 Suitable for sets whose height is restricted. High DC current gain. Large current capacity and wi

Ordering number EN3174B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1394/2SD2099 Compact Motor Driver Applications Features Package Dimensions Contains input resistance (R1), base-to-emitter unit mm resistance (RBE). 2038A Contains diode between collector and emitter. [2SB1394/2SD2099] Low saturation voltage. Large current capacity. Small-sized package makin

Ordering number EN3720 2SB1388 PNP Epitaxial Planar Silicon Transistors 2SD2093 NPN Triple Diffused Planar Silicon Transistors 2SB1388/2SD2093 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2039A [2SB1388/2SD2093] Features High DC current gain. Large current capacity and la

Ordering number EN2753C NPN Triple Diffused Planar Silicon Transistor 2SD2050 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers, relay drivers, unit mm voltage regulator control. 2049C [2SD2050] 10.2 Features 4.5 1.3 Suitable for sets whose height is restricted. High DC current gain. Large current capacity and wide ASO. 1.2

Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be sep

2SD2098 / 2SD2118 / 2SD2097 Transistors Low VCE(sat) transistor (strobe flash) 2SD2098 / 2SD2118 / 2SD2097 External dimensions (Units mm) Features 1) Low VCE(sat). 2SD2098 +0.2 VCE(sat) = 0.25V (Typ.) 4.5 -0.1 +0.2 1.5 1.6 0.1 -0.1 (IC/IB = 4A / 0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326. (1) (2) (3) 0.4+0.1 -0.05

Transistors Low VCE(sat) Transistor(Strobe flash) 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166 FFeatures FExternal dimensions (Units mm) 1) Low VCE(sat). VCE(sat) = 0.25V (Typ.) (IC / IB = 4A / 0.1A) 2) Excellent DC current gain charac- teristics. 3) Complements the 2SB1386 / 2SB1412 / 2SB1326 / 2SB1436. FStructure Epitaxial planar type NPN silicon transistor (96-229-D204) 252 Trans

2SD1957 Transistors Transistors 2SD2061 (94L-919 D301) (94L-1016-D304) 315

Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be sep

Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be sep

Power Transistors 2SD2052 Silicon NPN triple diffusion planar type For high power amplification Unit mm Complementary to 2SB1361 15.0 0.3 5.0 0.2 Features 11.0 0.2 3.2 Satisfactory foward current transfer ratio hFE vs. collector cur- rent IC characteristics 3.2 0.1 Wide area of safe operation (ASO) High transition frequency fT Optimum for the output stage of a HiFi aud

Power Transistors 2SD2057 Silicon NPN triple diffusion planar type For horizontal deflection output Unit mm 15.0 0.3 5.0 0.2 3.2 11.0 0.2 Features Incorporating a built-in damper diode 3.2 0.1 Reduction of a parts count and simplification of a circuit are al- lowed High breakdown voltage with high reliability 2.0 0.2 2.0 0.1 High-speed switching 1.1 0.1 0.6 0

Transistor 2SD2067 (Tentative) Unit mm Silicon NPN epitaxial planer type 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 For low-frequency output amplification 0.65 max. Features Darlington connection. High foward current transfer ratio hFE. +0.1 Large peak collector current ICP. 0.45 0.05 2.5 0.5 2.5 0.5 High collector to emitter voltage VCEO. 1 2 3 Allowing supp

Power Transistors 2SD2064 Silicon NPN triple diffusion planar type For high power amplification Unit mm Complementary to 2SB1371 15.0 0.3 5.0 0.2 Features 11.0 0.2 3.2 Satisfactory foward current transfer ratio hFE vs. collector cur- rent IC characteristics 3.2 0.1 Wide area of safe operation (ASO) High transition frequency fT Optimum for the output stage of a HiFi aud

Transistor 2SD2071 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Unit mm Complementary to 2SB1377 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Output of 1W is obtained with a complementary pair with 0.65 max. 2SB1377. Allowing supply with the radial taping. +

Transistor 2SD2067 (Tentative) Unit mm Silicon NPN epitaxial planer type 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 For low-frequency output amplification 0.65 max. Features Darlington connection. High foward current transfer ratio hFE. +0.1 Large peak collector current ICP. 0.45 0.05 2.5 0.5 2.5 0.5 High collector to emitter voltage VCEO. 1 2 3 Allowing supp

Transistor 2SD2074 Silicon NPN epitaxial planer type Unit mm For low-frequency output amplification 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) For muting 0.7 4.0 0.8 For DC-DC converter Features 0.65 max. Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. +0.1 0.45 0.05 Allowing supply with the radial taping.

Power Transistors 2SD2018 Silicon NPN epitaxial planar type darlington For low-frequency amplification Unit mm 8.0+0.5 0.1 3.2 0.2 3.16 0.1 Features High forward current transfer ratio hFE Built-in 60 V Zener diode between base to collector Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 60+25 V

Power Transistors 2SD2029 Silicon NPN triple diffusion planar type For high power amplification Unit mm Complementary to 2SB1347 3.3 0.2 20.0 0.5 5.0 0.3 3.0 Features Satisfactory foward current transfer ratio hFE collector current IC characteristics Wide area of safe operation (ASO) 1.5 High transition frequency fT Optimum for the output stage of a HiFi audio amplifie

Power Transistors 2SD2000 Silicon NPN triple diffusion planar type For power switching Unit mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 High-speed switching Satisfactory linearity of foward current transfer ratio hFE 3.1 0.1 Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 Absolute Ma

Transistor 2SD2074 Silicon NPN epitaxial planer type Unit mm For low-frequency output amplification 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) For muting 0.7 4.0 0.8 For DC-DC converter Features 0.65 max. Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. +0.1 0.45 0.05 Allowing supply with the radial taping.

2SD2046 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Outline TO-92MOD 2 3 ID 1. Emitter 2 k 0.5 2. Collector (Typ) (Typ) 1 3. Base 3 2 1 2SD2046 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 50 V Emitter to base voltage VEBO 7V Collector current IC 1.5 A Collector peak current ic (peak)

2SD2019 Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 2 3 1. Emitter ID 2. Collector 3. Base 1 15 k 0.5 k 2 3 (Typ) (Typ) 1 2SD2019 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 150 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 8V Collector current IC 1.5 A

2SD2030, 2SD2031 Silicon NPN Epitaxial Application Low frequency high voltage amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SD2030, 2SD2031 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SD2030 2SD2031 Unit Collector to base voltage VCBO 160 200 V Collector to emitter voltage VCEO 160 200 V Emitter to base voltage VEBO 55V Collector current IC 100 100

www.DataSheet4U.com SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2058 DESCRIPTION With TO-220F package Complement to type 2SB1366 Low collector saturation voltage VCE(SAT)=1.0V(Max) at IC=2A,IB=0.2A Collector power dissipation PC=25W(TC=25 ) APPLICATIONS With general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Co

NPN TRIPLE DIFFUSED 2SD200 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(No Damper Diode) TO-3 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector C

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD2061 TRANSISTOR (NPN) TO-220F 1. BASE FEATURES 2. COLLECTOR Low Saturation Voltage 3. EMITTER Excellent DC Current Gain Characteristice 1 2 3 Equivalent Circuit 2SD2061=Device code Solid dot=Green moldinn compound device, if none,the normal device XXXX=Code 2SD206

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors TO 220F 2SD2012 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Audio frequency power amplifier applications High DC current gain 3. EMITTER 1 2 Low saturation voltage 3 High power dissipation Equivalent Circuit 2SD2012=Device code Solid dot=Green moldinn compound de

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD2098 FEATURES 1. BASE Excellent DC current gain characteristics Complements the 2SB1386 2. COLLECTOR 1 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value Unit VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Vol

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2082 DESCRIPTION With TO-3PML package DARLINGTON Complement to type 2SB1382 APPLICATIONS Driver for Solenoid, Motor and General Purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Maximum absolute ratings(Ta=25 ) SYMBOL PARAMETER COND

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2089 DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low collector saturation voltage APPLICATIONS Small screen color TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2060 DESCRIPTION With TO-220F package Complement to type 2SB1368 Low collector saturation voltage VCE(SAT)=1.7V(Max) at IC=3A,IB=0.3A Collector power dissipation PC=25W(TC=25 ) APPLICATIONS With general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 si

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2095 DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol ABSOLUTE

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2015 DESCRIPTION With TO-220F package DARLINGTON APPLICATIONS Driver for solenoid Relay and motor General purpose PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2061 DESCRIPTION With TO-220Fa package Low saturation voltage Excellent DC current gain characteristics Wide safe operating area APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 emitter Fig.1 simplified outline (TO-220Fa) and symbol

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2093 DESCRIPTION With TO-3PML package DARLINGTON Complement to type 2SB1388 High DC current gain Low saturation voltage Large current capacity and large ASO APPLICATIONS Motor drivers Printer hammer drivers Relay drivers, Voltage regulator control PINNING PIN DESCRIPTION 1 Bas

Equivalent C circuit B Darlington 2SD2082 (2k ) (100 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1382) Application Driver for Solenoid, Motor and General Purpose External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SD2082 Symbol Conditions 2SD2082 Unit Unit 0.2 0.2 5.5 15.6 0.2

C Equivalent circuit B Darlington 2SD2016 (2k ) (200 ) E Silicon NPN Triple Diffused Planar Transistor Application Igniter, Relay and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SD2016 Unit Symbol Conditions 2SD2016 Unit 0.2 4.2 0.2 10.1 c0.5 2.8 A VCBO 200 V ICBO VCB=200V 10ma

Equivalent C circuit B Darlington 2SD2083 (2k ) (100 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1383) Application Driver for Solenoid, Motor and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-100(TO3P) Symbol 2SD2083 Unit Symbol Conditions 2SD2083 Unit 0.2 4.8 0.4 15.6 0.1

Equivalent C circuit B Darlington 2SD2045 (2.5k )(200 ) E Silicon NPN Triple Diffused Planar Transistor Application Driver for Solenoid, Motor and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM100(TO3PF) Symbol 2SD2045 Symbol Conditions 2SD2045 Unit Unit 0.2 0.2 5.5 15.6 0.2 3.45 VCBO 120 ICBO VCB=120

Equivalent C circuit B Darlington 2SD2015 (3k ) (500 ) E Silicon NPN Triple Diffused Planar Transistor Application Driver for Solenoid, Relay and Motor and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol Conditions 2SD2015 Symbol 2SD2015 Unit Unit 0.2 4.2 0.2 10.1 c0.5 2.8 ICBO VCB=150V

Equivalent C circuit B Darlington 2SD2081 (2k ) (200 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1259) Application Driver for Solenoid, Motor and General Purpose External Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Conditions 2SD2081 Unit Symbol 2SD2081 Unit 0.2 4.2 0.2 10.1 c0.5

Equivalent C circuit B Darlington 2SD2017 (4k ) E Silicon NPN Triple Diffused Planar Transistor Application Driver for Solenoid, Relay and Motor and General Purpose (Ta=25 C) Absolute maximum ratings (Ta=25 C) Electrical Characteristics External Dimensions FM20(TO220F) Symbol 2SD2017 Symbol Conditions 2SD2017 Unit Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 300 ICBO VCB=300

Equivalent C circuit B Darlington 2SD2014 (3k ) (200 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1257) Application Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions FM20(TO220F) Symbol 2SD2014 Symbol Conditions 2SD2014 Unit 4.2 Uni

2SD2098 FEATURES SOT-89 Excellent DC current gain characteristics Complements the 2SB1386 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. COLLECTOR 1 Symbol Parameter Value Units 2 VCBO Collector-Base Voltage 50 V 3. EMITTER 3 VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 5 A PC Collector Power

2SD2061(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features Low saturation voltage Excellent DC current gain characteristice MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Paramenter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage

2SD2098 SOT-89 Features 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 2 4.4 1.6 1.8 3. EMITTER 1.4 1.4 3 Features 2.6 4.25 2.4 3.75 Excellent DC current gain characteristics 0.8 MIN Complements the 2SB1386 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Param

2SD2097(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 4.45 5.21 3. BASE 4.32 2.92 5.33 MIN Features Low VCE(sat).VCE(sat) = 0.25V (Typ.)(IC/IB= 4A / 0.1A) Excellent Dc current gain characteristics 3.43 MIN 2.41 2.67 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.18 2.03 4.19 2.67 Symbol Parameter Value Units 1.14 1.40 VCBO Collector-B

2SD2098 NPN Plastic-Encapsulate Transistor SOT-89 1 2 1. BASE 3 2. COLLECTOR 3. EMITTER ABSOLUTE MAXIMUM RATINGS(Ta=25%C) Rating Unit Symbol Value Vdc Collector-Emitter Voltage 20 VCEO Vdc Collector-Base Voltage 50 VCBO Emitter-Base Voltage VEBO 6.0 Vdc I Adc(DC) C 5.0 Collector Current I CP 10 Adc (Pulse)(1) PC Collector Power Dissipation 0.5 W Tj , Tstg %C Juncti

SMD Type Transistors NPN Transistors 2SD2028 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=700mA Collector Emitter Voltage VCEO=8V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage (Note.1) VCBO 8

SMD Type Transistors NPN Transistors 2SD2099 1.70 0.1 Features Low saturation voltage. Large current capacity. Complementary to 2SB1394 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 6 Col

SMD Type Transistors NPN Transistors 2SD2098 1.70 0.1 Features Excellent DC current gain characteristics Complements the 2SB1386 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 6 Collector Curren

CHENMKO ENTERPRISE CO.,LTD 2SD2098PGP SMALL FLAT NPN Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 Amperes APPLICATION * Power driver and Strobe Flash . FEATURE * Small flat package. ( DPAK ) DPAK * Low saturation voltage VCE(sat)=0.25V(Typ.)(IC/IB=4A/0.1A) * High saturation current capability. .094 (2.38) .086 (2.19) .022 (0.55) .018 (0.45) CONSTRUCTION * NPN Cilicon Tran

CHENMKO ENTERPRISE CO.,LTD 2SD2098GP SMALL FLAT NPN Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 Amperes APPLICATION * Power driver and Strobe Flash . FEATURE * Small flat package. (SC-62/SOT-89) SC-62/SOT-89 * Low saturation voltage VCE(sat)=0.25V(Typ.)(IC/IB=4A/0.1A) * High speed switching time tstg= 1.0uSec (typ.) * PC= 2.0W (mounted on ceramic substrate). 4.6MAX. 1.6MAX.

isc Silicon NPN Darlington Power Transistor 2SD2082 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO High DC Current Gain- h = 2000( Min.) @(I = 8A, V = 4V) FE C CE Low Collector Saturation Voltage- V = 1.5V(Max)@ (I = 8A, I = 16mA) CE(sat) C B Complement to Type 2SB1382 Minimum Lot-to-Lot variations for robust device performance and reliable o

isc Silicon NPN Darlington Power Transistor 2SD2024 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@ (V = 3V, I = 2A) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

isc Silicon NPN Darlington Power Transistor 2SD2016 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 200V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 1A CE(sat) C High DC Current Gain h = 1000(Min) @ I = 1A, V = 4V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Igniter, relay and

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD2051 DESCRIPTION High DC Current Gain h = 4000(Min) @I = 1A FE C Low Collector Saturation Voltgae- V = 1.5V(Max.)@ I = 1A CE(sat) C Incorporating a built-in zener diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For low-frequency amplification AB

isc Silicon NPN Power Transistor 2SD2052 DESCRIPTION High Current-Gain Bandwidth Product Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SB1361 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplification, optimum for the output stage of a HiFi audio amplifier. ABSOLUTE MAXIMU

isc Silicon NPN Power Transistor 2SD2057 DESCRIPTION High Voltage, High Speed Wide Area of Safe Operation Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector- Emitter Voltage(V

isc Silicon NPN Power Transistor 2SD2027 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SB1346 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency and general purpose amplifier applications. ABSOLUTE MAXI

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2021 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 150V (Min) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier TV vertical deflection output applications ABSOLUTE MAXIMUM RATINGS

isc Silicon NPN Darlington Power Transistor 2SD2079 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain- h = 2000(Min)@ (V = 3V, I = 3A) FE CE C Low Collector Saturation Voltage- V = 1.5V(Max)@ (I = 3A, I = 6mA) CE(sat) C B Complement to Type 2SB1381 Minimum Lot-to-Lot variations for robust device performance and reliable oper

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD207 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Sustaining Voltage- V = 100V(Min.) CEO(SUS) Low Collector Saturation Voltage- High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier and switching appli

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD200 DESCRIPTION High Collector-Base Breakdown Voltage- V = 1500V (Min.) (BR)CBO Low Collector Saturation Voltage- High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =2

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2066 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO Good Linearity of h FE High transition frequency(f ) T Wide area of satety operation Complement to Type 2SB1373 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high

isc Silicon NPN Darlington Power Transistor 2SD2083 DESCRIPTION High DC Current Gain h = 2000(Min.)@ I = 12A, V = 4V FE C CE High Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Complement to Type 2SB1383 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for driver of solenoid, motor and general purpose

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2020 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 150V (Min) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier TV vertical deflection output applications ABSOLUTE MAXIMUM RATINGS

isc Silicon NPN Power Transistor 2SD2023 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min.) (BR)CEO Low Collector Saturation Voltage V = 1.5V(Max)@I = 2A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

isc Silicon NPN Darlington Power Transistor 2SD2045 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 3A, V = 2V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed of driver

isc Silicon NPN Power Transistor 2SD2058 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V (Min) (BR)CEO Collector Power Dissipation P = 25 W(Max) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2001 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min.) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD2022 DESCRIPTION High DC Current Gain- h = 3000(Min)@ I = 1A FE C Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 1A CE(sat) C Incorporating a built-in zener diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low-frequency amplification

isc Silicon NPN Power Transistor 2SD2089 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas

isc Silicon NPN Power Transistor 2SD2060 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Collector Power Dissipation- P = 25W@ T = 25 C C Low Collector Saturation Voltage- V = 1.7V(Max)@ (I = 3A, I = 0.3A) CE(sat) C B Complement to Type 2SB1368 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

isc Silicon NPN Power Transistor 2SD2095 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA

isc Silicon NPN Darlington Power Transistor 2SD2015 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 2A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 2A, V = 2V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for drive

isc Silicon NPN Darlington Power Transistor 2SD2081 DESCRIPTION High DC Current Gain- h = 2000(Min)@I = 5A FE C Low-Collector Saturation Voltage- V = 1.5V(Max.)@I = 5A CE(sat) C Complement to Type 2SB1259 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio, series regulator and general purpose applications

isc Silicon NPN Power Transistor 2SD2047 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD203 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Sustaining Voltage- V = 100V(Min.) CEO(SUS) Low Collector Saturation Voltage- High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and switching applicatio

isc Silicon NPN Darlington Power Transistor 2SD2025 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain- h = 1000(Min)@ (V = 3V, I = 2A) FE CE C Complement to Type 2SB1344 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications. ABSOLUTE MAXIMUM RA

isc Silicon NPN Power Transistor 2SD2033 DESCRIPTION Good Linearity of h FE Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Complement to Type 2SB1353 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high voltage driver applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD201 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Sustaining Voltage- V = 60V(Min.) CEO(SUS) Low Collector Saturation Voltage- High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and switching application

isc Silicon NPN Power Transistor 2SD2061 DESCRIPTION Low Collector Saturation Voltage V = 0.3V(TYP.) @ I = 2A CE(sat) C Collector Power Dissipation P = 30W (Max) C Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(T

isc Silicon NPN Darlington Power Transistor 2SD2094 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 4A CE(sat) C High DC Current Gain h = 1000(Min) @ I = 4A, V = 3V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low f

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD2091 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = 1A FE C Low Collector-Emitter Saturation Voltage- V = 1.5V(Max)@ I = 1A CE(sat) C Incorporating a built-in zener diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Low-frequency power amplifi

isc Silicon NPN Darlington Power Transistor 2SD2017 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 250V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 2A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 2A, V = 2V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed of d

isc Silicon NPN Power Transistor 2SD2029 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SB1347 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Optimum for the output stage of a HiFi audio amplifier ABSOLUTE MAXIMUM RATINGS

isc Silicon NPN Power Transistor 2SD2000 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min.) (BR)CEO High Speed Switching Good Linearity of h FE High Collector Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2012 DESCRIPTION High DC Current Gain- h = 100 (Min)@ I = 0.5A FE C Low Saturation Voltage- V = 1.0V (Max) CE(sat) High Power Dissipation P = 25 W(Max)@ T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier

isc Silicon NPN Darlington Power Transistor 2SD2014 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Collector-Emitter Saturation Voltage- V = 1.5V(Max) @I = 3A CE(sat) C High DC Current Gain h = 2000(Min) @ I = 3A, V = 2V FE C CE Complement to Type 2SB1257 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLI

isc Silicon NPN Power Transistor 2SD2053 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO Wide Area of Safe Operation Complement to Type 2SB1362 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V C

isc Silicon NPN Darlington Power Transistor 2SD2093 DESCRIPTION Micaless package facilitating mounting. Large current capacity and large ASO. Low saturation volatage. V = 1.5V(Max) @I = 5A,I =10mA CE(sat) C B High DC Current Gain h = 1500(Min) @ I = 5A, V = 3V FE C CE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Des

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2055 DESCRIPTION High DC Current Gain - h =20(Min)@ I = 4A FE C Collector-Emitter Sustaining Voltage- V = 60V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high power audio amplifiers utilizing complementary or quasi complementar

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2062 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

isc Silicon NPN Power Transistor 2SD2065 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Complement to Type 2SB1372 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2059 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Collector Power Dissipation- P = 30W@ T = 25 C C Low Collector Saturation Voltage- V = 2.0V(Max)@ (I = 4A, I = 0.4A) CE(sat) C B Complement to Type 2SB1367 Minimum Lot-to-Lot variations for robust device performance and reliable