2SD20 Datasheet and Replacement

2SD2088 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor) 2SD2088 Micro Motor Drive, Hammer Drive Applications Unit: mm Switching Applications Power Amplifier Applications High DC current gain: hFE = 2000 (min) (V = 2 V, I = 1 A) CE C Low saturation voltage: V = 1.5 V (max) (I = 1 A, I = 1 mA) CE (sat) C B Zener diode included between c

2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications Unit: mm Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2A / IB = 0.2A) High power dissipation: PC = 25 W (Tc = 25C) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 60 VCollector-emitter voltage

Ordering number:EN2752BNPN Triple Diffused Planar Silicon Darlington Transistor2SD2049Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2049C[2SD2049]10.24.5Features1.3 Suitable for sets whose height is restricted. High DC current gain. Large current capacity and wi

Ordering number:EN2803NPN Epitaxial Planar Silicon Transistor2SD2028Low-Frequency Power Amplifier ApplicationsFeatures Package Dimensions With Zener diode (11 3V) between collector andunit:mmbase.2018B Large current capacity.[2SD2028] Low collector-to-emitter saturation voltage.0.4 Ultrasmall-sized package permitting the 2SD2028- 0.163applied sets to

Ordering number:EN2751BNPN Triple Diffused Planar Silicon Darlington Transistor2SD2048Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2049C[2SD2048]10.24.5Features1.3 Suitable for sets whose height is restricted. High DC current gain. Large current capacity and wi

Ordering number:EN3174BPNP/NPN Epitaxial Planar Silicon Transistors2SB1394/2SD2099Compact Motor Driver ApplicationsFeatures Package Dimensions Contains input resistance (R1), base-to-emitterunit:mmresistance (RBE).2038A Contains diode between collector and emitter.[2SB1394/2SD2099] Low saturation voltage. Large current capacity. Small-sized package makin

Ordering number:EN37202SB1388 : PNP Epitaxial Planar Silicon Transistors2SD2093 : NPN Triple Diffused Planar Silicon Transistors2SB1388/2SD2093Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2039A[2SB1388/2SD2093]Features High DC current gain. Large current capacity and la

Ordering number:EN2753CNPN Triple Diffused Planar Silicon Transistor2SD2050Driver ApplicationsApplications Package Dimensions Motor drivers, printer hammer drivers, relay drivers,unit:mmvoltage regulator control.2049C[2SD2050]10.2Features 4.51.3 Suitable for sets whose height is restricted. High DC current gain. Large current capacity and wide ASO.1.2

Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference only. Upon actual use, therefore, please requestthat specifications to be sep

2SD2098 / 2SD2118 / 2SD2097TransistorsLow VCE(sat) transistor (strobe flash)2SD2098 / 2SD2118 / 2SD2097 External dimensions (Units : mm) Features1) Low VCE(sat).2SD2098+0.2VCE(sat) = 0.25V (Typ.) 4.5-0.1+0.21.51.60.1 -0.1(IC/IB = 4A / 0.1A)2) Excellent DC current gain characteristics.3) Complements the 2SB1386 / 2SB1412 / 2SB1326.(1) (2) (3)0.4+0.1-0.05

TransistorsLow VCE(sat) Transistor(Strobe flash)2SD2098 / 2SD2118 / 2SD2097 / 2SD2166FFeatures FExternal dimensions (Units: mm)1) Low VCE(sat).VCE(sat) = 0.25V (Typ.)(IC / IB = 4A / 0.1A)2) Excellent DC current gain charac-teristics.3) Complements the2SB1386 / 2SB1412 / 2SB1326 /2SB1436.FStructureEpitaxial planar typeNPN silicon transistor(96-229-D204)252Trans

2SD1957TransistorsTransistors2SD2061(94L-919D301)(94L-1016-D304)315

Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference only. Upon actual use, therefore, please requestthat specifications to be sep

Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference only. Upon actual use, therefore, please requestthat specifications to be sep

Power Transistors2SD2051Silicon NPN epitaxial planar type DarlingtonFor low-frequency amplificationUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2Features 3.1 0.1High foward current transfer ratio hFEIncorporating a built-in zener diodeFull-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1+0.2Absolute Maximum Ratings (TC=25

Power Transistors2SD2052Silicon NPN triple diffusion planar typeFor high power amplificationUnit: mmComplementary to 2SB136115.0 0.3 5.0 0.2Features11.0 0.2 3.2Satisfactory foward current transfer ratio hFE vs. collector cur-rent IC characteristics 3.2 0.1Wide area of safe operation (ASO)High transition frequency fTOptimum for the output stage of a HiFi aud

Power Transistors2SD2057Silicon NPN triple diffusion planar typeFor horizontal deflection outputUnit: mm15.0 0.3 5.0 0.23.211.0 0.2FeaturesIncorporating a built-in damper diode 3.2 0.1Reduction of a parts count and simplification of a circuit are al-lowedHigh breakdown voltage with high reliability2.0 0.2 2.0 0.1High-speed switching1.1 0.1 0.6 0

Transistor2SD2067 (Tentative)Unit: mmSilicon NPN epitaxial planer type2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8For low-frequency output amplification0.65 max.FeaturesDarlington connection.High foward current transfer ratio hFE.+0.1 Large peak collector current ICP.0.450.052.5 0.5 2.5 0.5High collector to emitter voltage VCEO.1 2 3Allowing supp

Power Transistors2SD2064Silicon NPN triple diffusion planar typeFor high power amplificationUnit: mmComplementary to 2SB137115.0 0.3 5.0 0.2Features11.0 0.2 3.2Satisfactory foward current transfer ratio hFE vs. collector cur-rent IC characteristics 3.2 0.1Wide area of safe operation (ASO)High transition frequency fTOptimum for the output stage of a HiFi aud

Transistor2SD2071Silicon NPN epitaxial planer typeFor low-frequency power amplification and driver amplificationUnit: mmComplementary to 2SB13772.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesLow collector to emitter saturation voltage VCE(sat).Output of 1W is obtained with a complementary pair with0.65 max.2SB1377.Allowing supply with the radial taping.+

Transistor2SD2067 (Tentative)Unit: mmSilicon NPN epitaxial planer type2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8For low-frequency output amplification0.65 max.FeaturesDarlington connection.High foward current transfer ratio hFE.+0.1 Large peak collector current ICP.0.450.052.5 0.5 2.5 0.5High collector to emitter voltage VCEO.1 2 3Allowing supp

Transistor2SD2074Silicon NPN epitaxial planer typeUnit: mmFor low-frequency output amplification2.5 0.11.056.9 0.1 0.05 (1.45)For muting0.7 4.0 0.8For DC-DC converterFeatures0.65 max.Low collector to emitter saturation voltage VCE(sat).Low ON resistance Ron.High foward current transfer ratio hFE.+0.1 0.450.05Allowing supply with the radial taping.

Power Transistors2SD2018Silicon NPN epitaxial planar type darlingtonFor low-frequency amplificationUnit: mm8.0+0.50.13.20.2 3.160.1 Features High forward current transfer ratio hFE Built-in 60 V Zener diode between base to collector Absolute Maximum Ratings Ta = 25CParameter Symbol Rating UnitCollector-base voltage (Emitter open) VCBO 60+25 V

Power Transistors2SD2029Silicon NPN triple diffusion planar typeFor high power amplificationUnit: mmComplementary to 2SB1347 3.3 0.220.0 0.5 5.0 0.33.0FeaturesSatisfactory foward current transfer ratio hFE collector current ICcharacteristicsWide area of safe operation (ASO) 1.5High transition frequency fTOptimum for the output stage of a HiFi audio amplifie

Power Transistors2SD2000Silicon NPN triple diffusion planar typeFor power switchingUnit: mm10.0 0.2 4.2 0.2Features5.5 0.2 2.7 0.2High-speed switchingSatisfactory linearity of foward current transfer ratio hFE 3.1 0.1Large collector power dissipation PCFull-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1Absolute Ma

Transistor2SD2074Silicon NPN epitaxial planer typeUnit: mmFor low-frequency output amplification2.5 0.11.056.9 0.1 0.05 (1.45)For muting0.7 4.0 0.8For DC-DC converterFeatures0.65 max.Low collector to emitter saturation voltage VCE(sat).Low ON resistance Ron.High foward current transfer ratio hFE.+0.1 0.450.05Allowing supply with the radial taping.

2SD2046Silicon NPN Epitaxial, DarlingtonApplicationLow frequency power amplifierOutlineTO-92MOD23ID1. Emitter2 k 0.5 2. Collector (Typ) (Typ)13. Base3212SD2046Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 50 VEmitter to base voltage VEBO 7VCollector current IC 1.5 ACollector peak current ic (peak)

2SD2019Silicon NPN EpitaxialApplicationLow frequency power amplifierOutlineTO-126 MOD231. EmitterID2. Collector3. Base115 k 0.5 k23(Typ) (Typ)12SD2019Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 150 VCollector to emitter voltage VCEO 80 VEmitter to base voltage VEBO 8VCollector current IC 1.5 A

2SD2030, 2SD2031Silicon NPN EpitaxialApplicationLow frequency high voltage amplifierOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SD2030, 2SD2031Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SD2030 2SD2031 UnitCollector to base voltage VCBO 160 200 VCollector to emitter voltage VCEO 160 200 VEmitter to base voltage VEBO 55VCollector current IC 100 100

www.DataSheet4U.comSavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2058 DESCRIPTION With TO-220F package Complement to type 2SB1366 Low collector saturation voltage: VCE(SAT)=1.0V(Max) at IC=2A,IB=0.2A Collector power dissipation: PC=25W(TC=25)APPLICATIONS With general purpose applications PINNING PIN DESCRIPTION1 Base 2 Co

NPN TRIPLE DIFFUSED2SD200 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS(No Damper Diode) TO-3 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector C

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors2SD2061 TRANSISTOR (NPN) TO-220F1. BASEFEATURES 2. COLLECTOR Low Saturation Voltage3. EMITTER Excellent DC Current Gain Characteristice123 Equivalent Circuit 2SD2061=Device code Solid dot=Green moldinn compound device, if none,the normal deviceXXXX=Code2SD206

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate TransistorsTO 220F 2SD2012 TRANSISTOR (NPN)1. BASEFEATURES 2. COLLECTOR Audio frequency power amplifier applications High DC current gain3. EMITTER 12 Low saturation voltage 3 High power dissipation Equivalent Circuit 2SD2012=Device code Solid dot=Green moldinn compound de

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD2098 FEATURES 1. BASE Excellent DC current gain characteristics Complements the 2SB1386 2. COLLECTOR 1 2 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value UnitVCBO Collector-Base Voltage 50 VVCEO Collector-Emitter Vol

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2082 DESCRIPTION With TO-3PML package DARLINGTON Complement to type 2SB1382 APPLICATIONS Driver for Solenoid, Motor and General Purpose PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PML) and symbol Maximum absolute ratings(Ta=25) SYMBOL PARAMETER COND

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2089 DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low collector saturation voltage APPLICATIONS Small screen color TV horizontal output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3P(H)IS) and symbol

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2060 DESCRIPTION With TO-220F package Complement to type 2SB1368 Low collector saturation voltage: VCE(SAT)=1.7V(Max) at IC=3A,IB=0.3A Collector power dissipation: PC=25W(TC=25) APPLICATIONS With general purpose applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 si

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2095 DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3P(H)IS) and symbol ABSOLUTE

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2015 DESCRIPTION With TO-220F package DARLINGTON APPLICATIONS Driver for solenoid Relay and motor General purpose PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2061 DESCRIPTION With TO-220Fa package Low saturation voltage Excellent DC current gain characteristics Wide safe operating area APPLICATIONS For low frequency power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Collector3 emitterFig.1 simplified outline (TO-220Fa) and symbol

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2093 DESCRIPTION With TO-3PML package DARLINGTON Complement to type 2SB1388 High DC current gain Low saturation voltage Large current capacity and large ASO APPLICATIONS Motor drivers Printer hammer drivers Relay drivers, Voltage regulator control PINNING PIN DESCRIPTION1 Bas

Equivalent CcircuitBDarlington 2SD2082(2k) (100)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1382)Application : Driver for Solenoid, Motor and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SD2082 Symbol Conditions 2SD2082 UnitUnit0.20.2 5.515.60.2

CEquivalentcircuitBDarlington 2SD2016(2k) (200)ESilicon NPN Triple Diffused Planar TransistorApplication : Igniter, Relay and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SD2016 Unit Symbol Conditions 2SD2016 Unit0.24.20.210.1c0.52.8 AVCBO 200 V ICBO VCB=200V 10ma

Equivalent CcircuitBDarlington 2SD2083(2k) (100)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1383)Application : Driver for Solenoid, Motor and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol 2SD2083 Unit Symbol Conditions 2SD2083 Unit0.24.80.415.60.1

Equivalent CcircuitBDarlington 2SD2045(2.5k)(200)ESilicon NPN Triple Diffused Planar TransistorApplication : Driver for Solenoid, Motor and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM100(TO3PF)Symbol 2SD2045 Symbol Conditions 2SD2045 UnitUnit0.20.2 5.515.60.23.45VCBO 120 ICBO VCB=120

Equivalent CcircuitBDarlington 2SD2015(3k) (500)ESilicon NPN Triple Diffused Planar TransistorApplication : Driver for Solenoid, Relay and Motor and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol Conditions 2SD2015Symbol 2SD2015 Unit Unit0.24.20.210.1c0.52.8ICBO VCB=150V

Equivalent CcircuitBDarlington 2SD2081(2k) (200)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1259)Application : Driver for Solenoid, Motor and General PurposeExternal Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Conditions 2SD2081 UnitSymbol 2SD2081 Unit0.24.20.210.1c0.5

Equivalent CcircuitBDarlington 2SD2017(4k)ESilicon NPN Triple Diffused Planar TransistorApplication : Driver for Solenoid, Relay and Motor and General Purpose(Ta=25C) Absolute maximum ratings (Ta=25C) Electrical Characteristics External Dimensions FM20(TO220F)Symbol 2SD2017 Symbol Conditions 2SD2017 UnitUnit0.24.20.210.1c0.52.8VCBO 300 ICBO VCB=300

Equivalent CcircuitBDarlington 2SD2014(3k) (200)ESilicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1257)Application : Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SD2014 Symbol Conditions 2SD2014 Unit 4.2Uni

2SD2098 FEATURESSOT-89 Excellent DC current gain characteristics Complements the 2SB1386 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. COLLECTOR 1 Symbol Parameter Value Units2 VCBO Collector-Base Voltage 50 V3. EMITTER 3 VCEO Collector-Emitter Voltage 20 VVEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 5 A PC Collector Power

2SD2061(NPN) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features Low saturation voltage Excellent DC current gain characteristice MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Paramenter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage

2SD2098 SOT-89 Features1. BASE SOT-892. COLLECTOR 1 4.6B2 4.41.61.83. EMITTER 1.41.43 Features2.64.252.43.75 Excellent DC current gain characteristics 0.8MIN Complements the 2SB1386 0.530.400.480.442x)0.13 B0.35 0.371.53.0MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Param

2SD2097(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 4.455.21 3. BASE 4.322.92 5.33MINFeatures Low VCE(sat).VCE(sat) = 0.25V (Typ.)(IC/IB= 4A / 0.1A) Excellent Dc current gain characteristics 3.43MIN2.412.67MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.182.034.192.67Symbol Parameter Value Units1.141.40VCBO Collector-B

2SD2098NPN Plastic-Encapsulate TransistorSOT-89121. BASE32. COLLECTOR3. EMITTERABSOLUTE MAXIMUM RATINGS(Ta=25%C)Rating UnitSymbolValueVdcCollector-Emitter Voltage 20VCEOVdcCollector-Base Voltage 50VCBOEmitter-Base Voltage VEBO 6.0 VdcIAdc(DC)C5.0Collector CurrentICP 10 Adc (Pulse)(1)PCCollector Power Dissipation 0.5 WTj , Tstg %CJuncti

SMD Type TransistorsNPN Transistors2SD2028SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=700mA Collector Emitter Voltage VCEO=8V 1 2+0.1+0.050.95 -0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage (Note.1) VCBO 8

SMD Type TransistorsNPN Transistors2SD20991.70 0.1 Features Low saturation voltage. Large current capacity. Complementary to 2SB13940.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 6 Col

SMD Type TransistorsNPN Transistors2SD20981.70 0.1 Features Excellent DC current gain characteristics Complements the 2SB13860.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 6 Collector Curren

CHENMKO ENTERPRISE CO.,LTD2SD2098PGPSMALL FLAT NPN Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 AmperesAPPLICATION* Power driver and Strobe Flash .FEATURE* Small flat package. ( DPAK )DPAK* Low saturation voltage VCE(sat)=0.25V(Typ.)(IC/IB=4A/0.1A) * High saturation current capability..094 (2.38).086 (2.19).022 (0.55).018 (0.45)CONSTRUCTION* NPN Cilicon Tran

CHENMKO ENTERPRISE CO.,LTD2SD2098GPSMALL FLAT NPN Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 AmperesAPPLICATION* Power driver and Strobe Flash .FEATURE* Small flat package. (SC-62/SOT-89)SC-62/SOT-89* Low saturation voltage VCE(sat)=0.25V(Typ.)(IC/IB=4A/0.1A) * High speed switching time: tstg= 1.0uSec (typ.)* PC= 2.0W (mounted on ceramic substrate).4.6MAX. 1.6MAX.

isc Silicon NPN Darlington Power Transistor 2SD2082DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOHigh DC Current Gain-: h = 2000( Min.) @(I = 8A, V = 4V)FE C CELow Collector Saturation Voltage-: V = 1.5V(Max)@ (I = 8A, I = 16mA)CE(sat) C BComplement to Type 2SB1382Minimum Lot-to-Lot variations for robust deviceperformance and reliable o

isc Silicon NPN Darlington Power Transistor 2SD2024DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = 3V, I = 2A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

isc Silicon NPN Darlington Power Transistor 2SD2016DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 1ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 1A, V = 4VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIgniter, relay and

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD2051DESCRIPTIONHigh DC Current Gain: h = 4000(Min) @I = 1AFE CLow Collector Saturation Voltgae-: V = 1.5V(Max.)@ I = 1ACE(sat) CIncorporating a built-in zener diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor low-frequency amplificationAB

isc Silicon NPN Power Transistor 2SD2052DESCRIPTIONHigh Current-Gain Bandwidth ProductGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB1361Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplification, optimum for theoutput stage of a HiFi audio amplifier.ABSOLUTE MAXIMU

isc Silicon NPN Power Transistor 2SD2057DESCRIPTIONHigh Voltage, High SpeedWide Area of Safe OperationBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector- Emitter Voltage(V

isc Silicon NPN Power Transistor 2SD2027DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB1346Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency and general purposeamplifier applications.ABSOLUTE MAXI

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2021DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 150V (Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier TV verticaldeflection output applicationsABSOLUTE MAXIMUM RATINGS

isc Silicon NPN Darlington Power Transistor 2SD2079DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain-: h = 2000(Min)@ (V = 3V, I = 3A)FE CE CLow Collector Saturation Voltage-: V = 1.5V(Max)@ (I = 3A, I = 6mA)CE(sat) C BComplement to Type 2SB1381Minimum Lot-to-Lot variations for robust deviceperformance and reliable oper

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD207DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Sustaining Voltage-: V = 100V(Min.)CEO(SUS)Low Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier and switching appli

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD200DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 1500V (Min.)(BR)CBOLow Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =2

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2066DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 160V(Min)(BR)CEOGood Linearity of hFEHigh transition frequency(f )TWide area of satety operationComplement to Type 2SB1373Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high

isc Silicon NPN Darlington Power Transistor 2SD2083DESCRIPTIONHigh DC Current Gain: h = 2000(Min.)@ I = 12A, V = 4VFE C CEHigh Collector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOComplement to Type 2SB1383Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for driver of solenoid, motor and generalpurpose

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2020DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 150V (Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier TV verticaldeflection output applicationsABSOLUTE MAXIMUM RATINGS

isc Silicon NPN Power Transistor 2SD2023DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min.)(BR)CEOLow Collector Saturation Voltage: V = 1.5V(Max)@I = 2ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

isc Silicon NPN Darlington Power Transistor 2SD2045DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 3A, V = 2VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned of driver

isc Silicon NPN Power Transistor 2SD2058DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V (Min)(BR)CEOCollector Power Dissipation: P = 25 W(Max)CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2001DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min.)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of color TVreceivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD2022DESCRIPTIONHigh DC Current Gain-: h = 3000(Min)@ I = 1AFE CLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 1ACE(sat) CIncorporating a built-in zener diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow-frequency amplification

isc Silicon NPN Power Transistor 2SD2089DESCRIPTIONHigh Breakdown Voltage-V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Bas

isc Silicon NPN Power Transistor 2SD2060DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOCollector Power Dissipation-: P = 25W@ T = 25C CLow Collector Saturation Voltage-: V = 1.7V(Max)@ (I = 3A, I = 0.3A)CE(sat) C BComplement to Type 2SB1368Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

isc Silicon NPN Power Transistor 2SD2095DESCRIPTIONHigh Breakdown Voltage-V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

isc Silicon NPN Darlington Power Transistor 2SD2015DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 2ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 2A, V = 2VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for drive

isc Silicon NPN Darlington Power Transistor 2SD2081DESCRIPTIONHigh DC Current Gain-: h = 2000(Min)@I = 5AFE CLow-Collector Saturation Voltage-: V = 1.5V(Max.)@I = 5ACE(sat) CComplement to Type 2SB1259Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio, series regulator and general purposeapplications

isc Silicon NPN Power Transistor 2SD2047DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD203DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Sustaining Voltage-: V = 100V(Min.)CEO(SUS)Low Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and switching applicatio

isc Silicon NPN Darlington Power Transistor 2SD2025DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain-: h = 1000(Min)@ (V = 3V, I = 2A)FE CE CComplement to Type 2SB1344Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier applications.ABSOLUTE MAXIMUM RA

isc Silicon NPN Power Transistor 2SD2033DESCRIPTIONGood Linearity of hFE Collector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOComplement to Type 2SB1353Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high voltage driver applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD201DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Sustaining Voltage-: V = 60V(Min.)CEO(SUS)Low Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and switching application

isc Silicon NPN Power Transistor 2SD2061DESCRIPTIONLow Collector Saturation Voltage: V = 0.3V(TYP.) @ I = 2ACE(sat) CCollector Power Dissipation: P = 30W (Max)CWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T

isc Silicon NPN Darlington Power Transistor 2SD2094DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 4ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 4A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low f

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD2091DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 1AFE CLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 1ACE(sat) CIncorporating a built-in zener diodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSLow-frequency power amplifi

isc Silicon NPN Darlington Power Transistor 2SD2017DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 250V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 2ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 2A, V = 2VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned of d

isc Silicon NPN Power Transistor 2SD2029DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 160V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SB1347Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsOptimum for the output stage of a HiFi audio amplifierABSOLUTE MAXIMUM RATINGS

isc Silicon NPN Power Transistor 2SD2000DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min.)(BR)CEOHigh Speed SwitchingGood Linearity of hFEHigh Collector Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2012DESCRIPTIONHigh DC Current Gain-: h = 100 (Min)@ I = 0.5AFE CLow Saturation Voltage-: V = 1.0V (Max)CE(sat)High Power Dissipation: P = 25 W(Max)@ T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier

isc Silicon NPN Darlington Power Transistor 2SD2014DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 3A, V = 2VFE C CEComplement to Type 2SB1257Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLI

isc Silicon NPN Power Transistor 2SD2053DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SB1362Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV C

isc Silicon NPN Darlington Power Transistor 2SD2093DESCRIPTIONMicaless package facilitating mounting.Large current capacity and large ASO.Low saturation volatage.: V = 1.5V(Max) @I = 5A,I =10mACE(sat) C BHigh DC Current Gain: h = 1500(Min) @ I = 5A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDes

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2055DESCRIPTIONHigh DC Current Gain -: h =20(Min)@ I = 4AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high power audio amplifiers utilizingcomplementary or quasi complementar

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2062DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

isc Silicon NPN Power Transistor 2SD2065DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 140V(Min)(BR)CEOGood Linearity of hFEWide Area of Safe OperationComplement to Type 2SB1372Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2059DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector Power Dissipation-: P = 30W@ T = 25C CLow Collector Saturation Voltage-: V = 2.0V(Max)@ (I = 4A, I = 0.4A)CE(sat) C BComplement to Type 2SB1367Minimum Lot-to-Lot variations for robust deviceperformance and reliable