2SD2012Y Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD2012Y
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 25 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 9 MHz
Ganancia de corriente contínua (hFE): 100
Encapsulados: TO220
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2SD2012Y datasheet
2sd2012.pdf
2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications Unit mm Low saturation voltage VCE (sat) = 0.4 V (typ.) (IC = 2A / IB = 0.2A) High power dissipation PC = 25 W (Tc = 25 C) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage
2sd2012.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors TO 220F 2SD2012 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Audio frequency power amplifier applications High DC current gain 3. EMITTER 1 2 Low saturation voltage 3 High power dissipation Equivalent Circuit 2SD2012=Device code Solid dot=Green moldinn compound de
2sd2012.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2012 DESCRIPTION High DC Current Gain- h = 100 (Min)@ I = 0.5A FE C Low Saturation Voltage- V = 1.0V (Max) CE(sat) High Power Dissipation P = 25 W(Max)@ T = 25 C C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier
Otros transistores... 2SD200 , 2SD2000 , 2SD2001 , 2SD2002 , 2SD200A , 2SD201 , 2SD2012 , 2SD2012G , 2SB817 , 2SD2014 , 2SD2015 , 2SD2016 , 2SD2017 , 2SD2018 , 2SD2019 , 2SD202 , 2SD2020 .
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