2SD2012Y Datasheet and Replacement
Type Designator: 2SD2012Y
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 9 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO220
2SD2012Y Substitution
2SD2012Y Datasheet (PDF)
2sd2012.pdf

2SD2012 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications Unit: mm Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2A / IB = 0.2A) High power dissipation: PC = 25 W (Tc = 25C) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 60 VCollector-emitter voltage
2sd2012.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate TransistorsTO 220F 2SD2012 TRANSISTOR (NPN)1. BASEFEATURES 2. COLLECTOR Audio frequency power amplifier applications High DC current gain3. EMITTER 12 Low saturation voltage 3 High power dissipation Equivalent Circuit 2SD2012=Device code Solid dot=Green moldinn compound de
2sd2012.pdf

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2012DESCRIPTIONHigh DC Current Gain-: h = 100 (Min)@ I = 0.5AFE CLow Saturation Voltage-: V = 1.0V (Max)CE(sat)High Power Dissipation: P = 25 W(Max)@ T = 25C CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio frequency power amplifier
Datasheet: 2SD200 , 2SD2000 , 2SD2001 , 2SD2002 , 2SD200A , 2SD201 , 2SD2012 , 2SD2012G , 2N4401 , 2SD2014 , 2SD2015 , 2SD2016 , 2SD2017 , 2SD2018 , 2SD2019 , 2SD202 , 2SD2020 .
History: 2SB707 | 3DD13002SM | 2SC1278S | 2N1370 | BC122G
Keywords - 2SD2012Y transistor datasheet
2SD2012Y cross reference
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History: 2SB707 | 3DD13002SM | 2SC1278S | 2N1370 | BC122G



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