2SD203 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD203  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 50 W

Tensión colector-base (Vcb): 130 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 4 MHz

Ganancia de corriente contínua (hFE): 25

Encapsulados: TO3

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2SD203 datasheet

 ..1. Size:193K  inchange semiconductor
 2sd203.pdf pdf_icon

2SD203

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD203 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Sustaining Voltage- V = 100V(Min.) CEO(SUS) Low Collector Saturation Voltage- High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier and switching applicatio

 0.1. Size:361K  rohm
 2sd2033a.pdf pdf_icon

2SD203

Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be sep

 0.2. Size:30K  hitachi
 2sd2030 2sd2031.pdf pdf_icon

2SD203

2SD2030, 2SD2031 Silicon NPN Epitaxial Application Low frequency high voltage amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SD2030, 2SD2031 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SD2030 2SD2031 Unit Collector to base voltage VCBO 160 200 V Collector to emitter voltage VCEO 160 200 V Emitter to base voltage VEBO 55V Collector current IC 100 100

 0.3. Size:206K  inchange semiconductor
 2sd2033.pdf pdf_icon

2SD203

isc Silicon NPN Power Transistor 2SD2033 DESCRIPTION Good Linearity of h FE Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Complement to Type 2SB1353 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high voltage driver applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU

MOSTRAR MÁS

Otros transistores... 2SD2022, 2SD2023, 2SD2024, 2SD2025, 2SD2026, 2SD2027, 2SD2028, 2SD2029, 2SD669, 2SD2030, 2SD2031, 2SD2032, 2SD2033, 2SD2034, 2SD2035, 2SD2036, 2SD2037