All Transistors. 2SD203 Datasheet

 

2SD203 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SD203
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 50 W
   Maximum Collector-Base Voltage |Vcb|: 130 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO3

 2SD203 Transistor Equivalent Substitute - Cross-Reference Search

   

2SD203 Datasheet (PDF)

 ..1. Size:193K  inchange semiconductor
2sd203.pdf

2SD203
2SD203

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD203DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Sustaining Voltage-: V = 100V(Min.)CEO(SUS)Low Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier and switching applicatio

 0.1. Size:361K  rohm
2sd2033a.pdf

2SD203
2SD203

Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for reference only. Upon actual use, therefore, please requestthat specifications to be sep

 0.2. Size:30K  hitachi
2sd2030 2sd2031.pdf

2SD203
2SD203

2SD2030, 2SD2031Silicon NPN EpitaxialApplicationLow frequency high voltage amplifierOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SD2030, 2SD2031Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SD2030 2SD2031 UnitCollector to base voltage VCBO 160 200 VCollector to emitter voltage VCEO 160 200 VEmitter to base voltage VEBO 55VCollector current IC 100 100

 0.3. Size:206K  inchange semiconductor
2sd2033.pdf

2SD203
2SD203

isc Silicon NPN Power Transistor 2SD2033DESCRIPTIONGood Linearity of hFE Collector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOComplement to Type 2SB1353Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high voltage driver applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BD751B

 

 
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