2SD207A Todos los transistores

 8.1. Size:222K  1
 2sd2070.pdf

 8.2. Size:211K  toshiba
 2sd2075.pdf

 8.3. Size:219K  toshiba
 2sd2079.pdf

 8.4. Size:244K  toshiba
 2sd2075a.pdf

 8.5. Size:53K  panasonic
 2sd2071 e.pdf

Transistor 2SD2071 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Unit mm Complementary to 2SB1377 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features Low collector to emitter saturation voltage VCE(sat). Output of 1W is obtained with a complementary pair with 0.65 max. 2SB1377. Allowing supply with the radial taping. +

 8.6. Size:44K  panasonic
 2sd2074.pdf

Transistor 2SD2074 Silicon NPN epitaxial planer type Unit mm For low-frequency output amplification 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) For muting 0.7 4.0 0.8 For DC-DC converter Features 0.65 max. Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. +0.1 0.45 0.05 Allowing supply with the radial taping.

 8.7. Size:49K  panasonic
 2sd2074 e.pdf

Transistor 2SD2074 Silicon NPN epitaxial planer type Unit mm For low-frequency output amplification 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) For muting 0.7 4.0 0.8 For DC-DC converter Features 0.65 max. Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. +0.1 0.45 0.05 Allowing supply with the radial taping.

 8.8. Size:196K  inchange semiconductor
 2sd2079.pdf

isc Silicon NPN Darlington Power Transistor 2SD2079 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO High DC Current Gain- h = 2000(Min)@ (V = 3V, I = 3A) FE CE C Low Collector Saturation Voltage- V = 1.5V(Max)@ (I = 3A, I = 6mA) CE(sat) C B Complement to Type 2SB1381 Minimum Lot-to-Lot variations for robust device performance and reliable oper

 8.9. Size:193K  inchange semiconductor
 2sd207.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD207 DESCRIPTION Excellent Safe Operating Area Collector-Emitter Sustaining Voltage- V = 100V(Min.) CEO(SUS) Low Collector Saturation Voltage- High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier and switching appli