2SD207A Datasheet and Replacement

   Type Designator: 2SD207A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: TO3

2SD207A Substitution

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2SD207A Datasheet (PDF)

8.1. Size:222K 1
2sd2070.pdf pdf_icon

8.2. Size:211K toshiba
2sd2075.pdf pdf_icon

8.3. Size:219K toshiba
2sd2079.pdf pdf_icon

8.4. Size:244K toshiba
2sd2075a.pdf pdf_icon

8.5. Size:53K panasonic
2sd2071 e.pdf pdf_icon

Transistor2SD2071Silicon NPN epitaxial planer typeFor low-frequency power amplification and driver amplificationUnit: mmComplementary to 2SB13772.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesLow collector to emitter saturation voltage VCE(sat).Output of 1W is obtained with a complementary pair with0.65 max.2SB1377.Allowing supply with the radial taping.+

8.6. Size:44K panasonic
2sd2074.pdf pdf_icon

Transistor2SD2074Silicon NPN epitaxial planer typeUnit: mmFor low-frequency output amplification2.5 0.11.056.9 0.1 0.05 (1.45)For muting0.7 4.0 0.8For DC-DC converterFeatures0.65 max.Low collector to emitter saturation voltage VCE(sat).Low ON resistance Ron.High foward current transfer ratio hFE.+0.1 0.450.05Allowing supply with the radial taping.

8.7. Size:49K panasonic
2sd2074 e.pdf pdf_icon

8.8. Size:196K inchange semiconductor
2sd2079.pdf pdf_icon

isc Silicon NPN Darlington Power Transistor 2SD2079DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOHigh DC Current Gain-: h = 2000(Min)@ (V = 3V, I = 3A)FE CE CLow Collector Saturation Voltage-: V = 1.5V(Max)@ (I = 3A, I = 6mA)CE(sat) C BComplement to Type 2SB1381Minimum Lot-to-Lot variations for robust deviceperformance and reliable oper

8.9. Size:193K inchange semiconductor
2sd207.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD207DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Sustaining Voltage-: V = 100V(Min.)CEO(SUS)Low Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier and switching appli

Datasheet: 2SD2070 , 2SD2071 , 2SD2072 , 2SD2073 , 2SD2074 , 2SD2075 , 2SD2076 , 2SD2079 , S9014 , 2SD208 , 2SD2081 , 2SD2082 , 2SD2083 , 2SD2088 , 2SD2089 , 2SD208A , 2SD2092 .