2SD215 Todos los transistores

 0.1. Size:177K  toshiba
 2sd2155.pdf

 0.2. Size:106K  rohm
 2sd2150.pdf

Low Frequency Transistor (20V, 3A) 2SD2150 Features Dimensions(Unit mm) 1) Low VCE(sat). 2SD2150 VCE(sat) = 0.2V(Typ.) 4.5+0.2 -0.1 IC / IB = 2A / 0.1A 1.5+0.2 1.6 0.1 -0.1 2) Excellent current gain characteristics. 3) Complements the 2SB1424. (1) (2) (3) 0.4+0.1 -0.05 0.4 0.1 0.5 0.1 Structure 0.4 0.1 1.5 0.1 1.5 0.1 Epitaxial planar type 3.0 0.2

 0.3. Size:158K  rohm
 2sd2153.pdf

High gain amplifier transistor (25V, 2A) 2SD2153 Features Dimensions (Unit mm) 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC = IB = 1A / 20mA 4.0 1.0 2.5 0.5 2) Excellent DC current gain characteristics. (1) (2) (3) (1) Base (2) Collector (3) Emitter ROHM MPT3 EIAJ SC-62 Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Collect

 0.4. Size:54K  panasonic
 2sd2151.pdf

Power Transistors 2SD2151 Silicon NPN epitaxial planar type For power switching Unit mm Features 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC 3.1 0.1 Full-pack package which can be installed to the heat sink with one screw Absolute Maxi

 0.5. Size:255K  no
 2sd2156.pdf

 0.6. Size:307K  secos
 2sd2150.pdf

2SD2150 3 A, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES 4 Excellent Current-to-Gain Characteristics 1 Low Collector Saturation Voltage, 2 3 A VCE(SAT)=0.5V(Max.) for IC / IB=2A/0.1A E C Collector B C E 2 B D 1 F G Base H K J L 3

 0.7. Size:1613K  jiangsu
 2sd2150.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SD2150 TRANSISTOR (NPN) SOT-89-3L FEATURES 1. BASE Excellent current-to-gain characteristics Low collector saturation voltage VCE(sat) 2. COLLECTOR VCE(sat)=0.5V(max) for IC/IB=2A/0.1A 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Un

 0.8. Size:432K  jiangsu
 2sd2153.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD2153 TRANSISTOR (NPN) 1. BASE FEATURES Low saturation voltage 2. COLLECTOR Excellent DC current gain characteristics 3. EMITTER MARKING DN MAXIMUM RATINGS(Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector -Base Voltage 30 V VCEO

 0.9. Size:112K  jiangsu
 2sd2152.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 2SD2152 TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR High DC Current Gain 3. BASE Low Saturation Medium Current Application MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 22 V VCEO Collector-Emitter Voltage

 0.10. Size:224K  lge
 2sd2150.pdf

2SD2150 SOT-89 Transistor(NPN) 1. BASE 2. COLLECTOR SOT-89 3. EMITTER 4.6 B 4.4 1.6 1.8 Features 1.4 1.4 Excellent current-to-gain characteristics 2.6 4.25 2.4 3.75 Low collector saturation voltage VCE(sat) 0.8 VCE(sat)=0.5V(max) for IC/IB=2A/0.1A MIN 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 3.0 MAXIMUM RATINGS (TA=25 unless otherwise noted)

 0.11. Size:217K  wietron
 2sd2150.pdf

2SD2150 NPN Epitaxial Planar Transistors SOT-89 P b Lead(Pb)-Free 1 2 1. BASE 3 2. COLLECTOR 3. EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25 C) Rating Symbol Limits Unit VCBO V Collector-Base Voltage 40 VCEO V Collector-Emitter Voltage 20 VEBO V Emitter-Base Voltage 6 Collector Current IC 3 A Collector Power Dissipation PD 500 mW Junction Temperature Tj 150 C Tstg -55 t

 0.12. Size:1104K  blue-rocket-elect
 2sd2150.pdf

 0.13. Size:298K  blue-rocket-elect
 2sd2159.pdf

2SD2159(BR3DA2159) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features Low saturation voltage. / Applications Medium power amplifier applications. / Equivalent Circuit / Pinning

 0.14. Size:637K  semtech
 st2sd2150u.pdf

ST 2SD2150U NPN Silicon Epitaxial Planar Transistor Low frequency transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 20 V Emitter Base Voltage VEBO 6 V Collector Current - DC IC 3 A Collector Current - Pulse 1) ICP 5 1) 0.5 Ptot W Total Power Dissipation 2 2) Junction Temperature

 0.15. Size:1160K  kexin
 2sd2150.pdf

SMD Type Transistors NPN Transistors 2SD2150 1.70 0.1 Features Excellent current-to-gain characteristics Low collector saturation voltage VCE(sat) Complementary to 2SB1412 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 20 V

 0.16. Size:959K  kexin
 2sd2153.pdf

SMD Type Transistors NPN Transistors 2SD2153 1.70 0.1 Features Low saturation voltage, typically VCE(sat) = 0.12V at IC = IB = 1A / 20mA Excellent DC current gain characteristics. 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25

 0.17. Size:337K  cn shikues
 2sd2150r 2sd2150s.pdf

2SD2150 NPNGeneral use transistor 1.2W 3A 30V 4 Applications Can be used for switching and amplifying in 1 2 3 various electrical and electronic equipments. SOT-89 MAX RATING Parameters Symbol Rating Unit VCEO Collector emitter voltage IB=0 30 V VCBO V Collector base voltage IE=0 40 VEBO Emitter base voltage IC=0 5 V IC A Collector curren

 0.18. Size:201K  inchange semiconductor
 2sd2151.pdf

isc Silicon NPN Power Transistor 2SD2151 DESCRIPTION Low Collector Saturation Voltage V = 0.5V(Max)@ I = 6A CE(sat) C Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25

 0.19. Size:216K  inchange semiconductor
 2sd2156.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2156 DESCRIPTION High DC Current gain Low Collector Saturation Voltage V = 1.0V(Max)@ I = 2A CE(sat) C Collector-Emitter Breakdown Voltage- V = 60V (Min) (BR)CEO Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS D

 0.20. Size:201K  inchange semiconductor
 2sd2155.pdf

isc Silicon NPN Power Transistor 2SD2155 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- V = 180V(Min) (BR)CEO Complement to Type 2SB1429 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency ampl